Information Page of SAS Employee

Publications

Ing. Peter Eliáš

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• KESHTKAR, Javad - GUCMANN, Filip - VARGA, Marian - SZABÓ, O. - AUBRECHTOVÁ DRAGOUNOVÁ, K. - HUŠEKOVÁ, Kristína - ELIÁŠ, Peter - DOBROČKA, Edmund - FEDOR, Ján - ŠČEPKA, Tomáš - KOZAK, Andrii - CORA, Ildikó - JI, X. - POMEROY, J.W. - KUBALL, M. - TRUCHLY, M. - MIKULA, M. - KROMKA, A. - ŤAPAJNA, Milan. Enhancing β- Ga2O3 -diamond integration for high-power electronics: Thermal and mechanical performance of SiC and SiO2 interlayers. In EM-NANO 2025 : 10th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies, June 11-14, 2025 Fukui, Japan. Type: AFG
• KOZAK, Andrii** - ILČÍKOVÁ, Markéta - BABAEI, Nafiseh - KONIOS, Nikolaos - MIČUŠÍK, Matej - VRETENÁR, Viliam - PRECNER, Marián - OSIČKA, Josef - OROVČÍK, Ľubomír - ELIÁŠ, Peter - DOBROČKA, Edmund - HULMAN, Martin - MOSNÁČEK, Jaroslav - ŤAPAJNA, Milan**. Effect of polymer grafting on the tribological performance of graphene oxide under ambient air and vacuum. In ACS Applied Materials & Interfaces, 2025, vol. 14, iss. 32, p. 46172-46184. (2024: 8.2 - IF, Q1 - JCR, 1.921 - SJR, Q1 - SJR). ISSN 1944-8244. Dostupné na: https://doi.org/10.1021/acsami.5c09549 Type: ADCA
• KUZMÍK, Ján** - BLAHO, Michal - GREGUŠOVÁ, Dagmar - ELIÁŠ, Peter - POHORELEC, Ondrej - HASENÖHRL, Stanislav - HAŠČÍK, Štefan - GUCMANN, Filip - ZÁPRAŽNÝ, Zdenko - DOBROČKA, Edmund - KYAMBAKI, M. - KONSTANTINIDIS, G. Growth and performance of n++ GaN cap layer for HEMTs applications. In Materials science in semiconductor processing, 2025, vol. 185, no. 108959. (2024: 4.6 - IF, Q2 - JCR, 0.785 - SJR, Q1 - SJR). ISSN 1369-8001. Dostupné na: https://doi.org/10.1016/j.mssp.2024.108959 (VEGA 2/0005/22. Horizont Európa-101091433. VEGA 2/0068/21.) Type: ADCA
• ROSOVÁ, Alica - ČAPLOVIČOVÁ, M. - RUTERANA, P. - DOBROČKA, Edmund - ELIÁŠ, Peter - GUCMANN, Filip - HASENÖHRL, Stanislav - STOKLAS, Roman - KUZMÍK, Ján. Influence of InAlN layer Mg doping on the quality of InN/In0.61Al0.39N heterostructure deposited by MOCVD. In ASDAM 2024 : Conference Proceedings The 15th International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice Castle, Slovakia, October 20-23, 2024. Eds. T. Izsák, G. Vanko. - IEEE, 2024, p. 30-33. ISBN 979-8-3315-4060-9. ISSN 2474-9737. (VEGA 2/0068/21. APVV 21-0008.) Type:
• SOJKOVÁ, Michaela - POHORELEC, Ondrej - HRDÁ, Jana - KRAJČOVIČOVÁ, Timea Ema - KOZAK, Andrii - PRIBUSOVÁ SLUŠNÁ, Lenka - ŠČEPKA, Tomáš - HULMAN, Martin - MAŤKO, M. - VRETENÁR, Viliam - PÍŠ, I. - BONDINO, F. - ELIÁŠ, Peter - ŤAPAJNA, Milan - GREGUŠOVÁ, Dagmar. Transition metal dichalcogenides for electronic devices. In Proceedings of ADEPT 2025 : 13th International Conference on Advances in Electronic and Photonic Technologies - ADEPT, held in Podbanské, High Tatras, Slovakia, June 15th – 18th, 2025. Eds. D. Jandura, I. Lettrichová. - Žilina : University of Zilina in EDIS, 2025, p. 26-30. ISBN 978-80-554-2208-4. (APVV 21-0231.) Type: AFD
• STOKLAS, Roman - HASENÖHRL, Stanislav - GREGUŠOVÁ, Dagmar - DOBROČKA, Edmund - GUCMANN, Filip - ELIÁŠ, Peter - ROSOVÁ, Alica - MIČUŠÍK, Matej - CHROBÁK, Š. - KUZMÍK, Ján. Electron mobility analysis of InN/In0.61Al0.39N heterostructure after HCl treatment. In ASDAM 2024 : Conference Proceedings The 15th International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice Castle, Slovakia, October 20-23, 2024. - IEEE, 2024, p. 50-53. ISBN 979-8-3315-4060-9. ISSN 2474-9737. Dostupné na: https://doi.org/10.1109/ASDAM63148.2024.10844678 (VEGA 2/0068/21. APVV 21-0008.) Type: AECA
• VARGA, Marian - KESHTKAR, Javad - HUŠEKOVÁ, Kristína - KOZAK, Iryna - SHARMA, D. - KOZAK, Andrii - ELIÁŠ, Peter - DOBROČKA, Edmund - ŠČEPKA, Tomáš - HUDEC, Boris - DÉRER, Ján - FEDOR, Ján - AUBRECHTOVÁ DRAGOUNOVÁ, K. - SZABÓ, O. - ŤAPAJNA, Milan - KROMKA, A. - GUCMANN, Filip. Fabrication and characterization of Ga2O3-diamond heterostructures: impact of using protective interlayer. In Proceedings of ADEPT 2025 : 13th International Conference on Advances in Electronic and Photonic Technologies - ADEPT, held in Podbanské, High Tatras, Slovakia, June 15th – 18th, 2025. Eds. D. Jandura, I. Lettrichová. - Žilina : University of Zilina in EDIS, 2025, p. 31-35. ISBN 978-80-554-2208-4. (APVV 21-0231. APVV-20-0220 : Moderné elektronické súčiastky na báze ultraširokopásmového polovodiča Ga2O3 pre budúce vysokonapäťové aplikácie.) Type: AFD