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Institute of Electrical Engineering SAS

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• BABCHENKO, Oleg - SOJKOVÁ, Michaela - HULMAN, Martin - ČERMÁK, Jan - KROMKA, A. - CLAERBOUT, V.E.P. - NICOLINI, Pierre - LÓPEZ-CARBALLEIRA, D. - KULIČEK, J. - REZEK, B. Self-oriented MoS2 nanosheets on microcrystalline diamond layers: controlled synthesis and optoelectronic effects. In ACS Applied Electronic Materials, 2025, vol. 7, p. 1004-1018. ISSN 2637-6113. Dostupné na: https://doi.org/10.1021/acsaelm.4c01704 (APVV 21-0231. VEGA 2/0059/21. VEGA 2/0046/23) Type: ADCA
• FLOROVIČ, M. - DZURIŠ, M. - HARŤANSKÝ, R. - KOVÁČ, Jaroslav Jr. - CHVÁLA, A. - GREGUŠOVÁ, Dagmar - GUCMANN, Filip - ŤAPAJNA, Milan. Simple RF on-chip calibration for high-frequency transistor measurements. In ASDAM 2024 : Conference Proceedings The 15th International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice Castle, Slovakia, October 20-23, 2024. Eds. T. Izsák, G. Vanko. - IEEE, 2024, p. 46-49. ISBN 979-8-3315-4060-9. ISSN 2474-9737. Type:
• KUZMÍK, Ján** - BLAHO, Michal - GREGUŠOVÁ, Dagmar - ELIÁŠ, Peter - POHORELEC, Ondrej - HASENÖHRL, Stanislav - HAŠČÍK, Štefan - GUCMANN, Filip - ZÁPRAŽNÝ, Zdenko - DOBROČKA, Edmund - KYAMBAKI, M. - KONSTANTINIDIS, G. Growth and performance of n++ GaN cap layer for HEMTs applications. In Materials science in semiconductor processing, 2025, vol. 185, no. 108959. ISSN 1369-8001. Dostupné na: https://doi.org/10.1016/j.mssp.2024.108959 (VEGA 2/0005/22. Horizont Európa-101091433. VEGA 2/0068/21) Type: ADCA
• MATÚŠ, M. - STUCHLÍKOVÁ, Ľ. - GREGUŠOVÁ, Dagmar - MORALES, M. - WEIS, M. - MAREK, J. - RUTERANA, P. Impact of Indium content on defect distribution in InGaN/GaN QW structures. In ASDAM 2024 : Conference Proceedings The 15th International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice Castle, Slovakia, October 20-23, 2024. Eds. T. Izsák, G. Vanko. - IEEE, 2024, p. 38-41. ISBN 979-8-3315-4060-9. ISSN 2474-9737. (VEGA 2/0068/21) Type:
• ROSOVÁ, Alica - ČAPLOVIČOVÁ, M. - RUTERANA, P. - DOBROČKA, Edmund - ELIÁŠ, Peter - GUCMANN, Filip - HASENÖHRL, Stanislav - STOKLAS, Roman - KUZMÍK, Ján. Influence of InAlN layer Mg doping on the quality of InN/In0.61Al0.39N heterostructure deposited by MOCVD. In ASDAM 2024 : Conference Proceedings The 15th International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice Castle, Slovakia, October 20-23, 2024. Eds. T. Izsák, G. Vanko. - IEEE, 2024, p. 30-33. ISBN 979-8-3315-4060-9. ISSN 2474-9737. (VEGA 2/0068/21. APVV 21-0008) Type:
• STOKLAS, Roman - HASENÖHRL, Stanislav - GREGUŠOVÁ, Dagmar - DOBROČKA, Edmund - GUCMANN, Filip - ELIÁŠ, Peter - ROSOVÁ, Alica - MIČUŠÍK, Matej - CHROBÁK, Š. - KUZMÍK, Ján. Electron mobility analysis of InN/In0.61Al0.39N heterostructure after HCl treatment. In ASDAM 2024 : Conference Proceedings The 15th International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice Castle, Slovakia, October 20-23, 2024. Eds. T. Izsák, G. Vanko. - IEEE, 2024, p. 50-53. ISBN 979-8-3315-4060-9. ISSN 2474-9737. (VEGA 2/0068/21. APVV 21-0008) Type:
• VACULA, P. - VANKO, Gabriel - HUSÁK, M. - GRESL, T. - BARRI, D. - KOTĚ, V. - VACULA, M. - NEMAZAL, J. - NÁHLÍK, J. - ANDRLE, M. - SOROKINA, K. - URBAN, M. - MANCUSO, F. Enhancing of the GaN HEMTs devices through advanced innovative topologies. In ASDAM 2024 : Conference Proceedings The 15th International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice Castle, Slovakia, October 20-23, 2024. Eds. T. Izsák, G. Vanko. - IEEE, 2024, p. 1-4. ISBN 979-8-3315-4060-9. ISSN 2474-9737. Type: