Project
Institute of Electrical Engineering SAS
International Projects
AGAMI_EURIGAMI - European Innovative GaN Advanced Microwave Integration
Európska inovatívna pokročilá GaN mikrovlnná integrácia
| Duration: | 15. 12. 2022 - 14. 12. 2026 |
| Evidence number: | 101102983 |
| Program: | EDF |
| Project leader: | Ing. Kuzmík Ján DrSc. |
| Project web page: | https://ec.europa.eu/info/funding-tenders/opportunities/portal/screen/opportunities/projects-details/44181033/101102983/EDF |
Photo-Atomic Layer Printing
Fototlač atomárnych vrstiev
| Duration: | 1. 5. 2025 - 30. 4. 2028 |
| Program: | ERANET |
| Project leader: | Ing. Hudec Boris PhD. |
Combination of photodiodes and scintillators for detection of ionizing radiation
Kombinácia fotodiód a scintilátorov pre detekciu ionizujúceho žiarenia
| Duration: | 1. 1. 2025 - 31. 12. 2027 |
| Evidence number: | SAS-TUBITAK/JRP/2024/1107.C/COPS |
| Program: | Medzivládna dohoda |
| Project leader: | Ing. Ťapajna Milan PhD. |
CHIROMAG - Magnetism and chirality: twisting spins, light, and lattices for faster-than-ever spintronics
Magnetizmus a chiralita: točivé spiny, svetlo, a kryštalické mriezky pre rýchlejšiu spintroniku
| Duration: | 2. 10. 2024 - 1. 10. 2028 |
| Evidence number: | CA23136 |
| Program: | COST |
| Project leader: | Mgr. Feilhauer Juraj PhD. |
| Project web page: | https://www.cost.eu/actions/CA23136/#tabs+Name:Description |
Photohmic - Oxide-based photonic crystal ohmic contacts for efficient GaN-based PCSEL diodes
Ohmické kontakty pre efektívne PCSEL GaN diódy tvorené fotonickým kryštálom na báze oxidových materiálov
| Duration: | 1. 10. 2025 - 30. 9. 2028 |
| Program: | ERANET |
| Project leader: | Ing. Gucmann Filip PhD. |
SCARLET - Superconducting cables for sustainable energy transition
Supravodivé káble podporujúce prechod na udržateľnú energetiku
| Duration: | 1. 9. 2022 - 28. 2. 2027 |
| Evidence number: | Horizont Európa-101075602 |
| Program: | Horizont Európa |
| Project leader: | doc. Ing. Gömöry Fedor DrSc. |
| Project web page: | https://scarlet-project.eu/ |
Establishment of reliability laboratory for pawer modules and joint reserch of GaN and Ga2O3 power devices
Vybudovanie laboratória pre výskum spoľahlivosti výkonových modulov a spoločný výskum v oblasti GaN a Ga2O3 polovodičových výkonových súčiastok
| Duration: | 1. 7. 2023 - 30. 6. 2027 |
| Evidence number: | SK-TW |
| Program: | Bilaterálne - iné |
| Project leader: | Ing. Ťapajna Milan PhD. |
Development of CVD Diamond-Integrated Gallium Oxide Rectifying Diodes with Improved Thermal Performance and Electric Field Management
Vývoj usmerňujúcich diód na báze oxidu galitého s vylepšenými tepelnými a elektrickými vlastnosťami vďaka integrácii s CVD diamantom
| Duration: | 1. 1. 2025 - 31. 12. 2026 |
| Evidence number: | CAS-SAS-2024-08 |
| Program: | Mobility |
| Project leader: | Ing. Gucmann Filip PhD. |
| Annotation: | This project aims to address the issues of overheating and premature breakdown in high-power gallium oxide (GaO)-based devices by developing a cutting-edge technology to grow diamond films by chemical vapor deposition (CVD) directly on GaO films protected by engineered interlayers, targeting the GaO/diamond interface with low thermal barrier. This bilateral project will involve interdisciplinary collaboration between experts in diamond technology and materials science, epitaxial growth of (ultra)wide bandgap semiconductors, device design and fabrication, and advanced electrical testing. Successful completion of this research will result in a developed and manufactured prototype of an advanced power electronic GaO-based rectifying diode with CVD diamond serving as an efficient heat-spreading layer and guard ring-based edge termination for improved electric breakdown. Such technology has a significant disruptive potential for the current power electronic industry and may lead to innovative devices with improved efficiency and reliability available in the future power device market. |
National Projects
Cost-effective Ga2O3-diamond heterojunction photodetectors for solar-blind UV imaging
Cenovo dostupné fotodetektory s heteroprechodom Ga2O3-diamant pre UV zobrazovanie necitlivé na slnečné svetlo
| Duration: | 1. 8. 2024 - 30. 7. 2029 |
| Evidence number: | IM-2023-87 |
| Program: | IMPULZ |
| Project leader: | Ing. Varga Marian PhD. |
Two-dimensional materials and their heterostructures as a platform for multifunctional devices
Dvojrozmerné materiály a ich heteroštructúry ako platforma pre multifunkčné zadiadenia
| Duration: | 1. 1. 2025 - 31. 12. 2029 |
| Evidence number: | 1/0104/25 |
| Program: | VEGA |
| Project leader: | doc. Ing. Skákalová Viera DrSc. |
CERBERUS - Colour centres in diamond – correlation between atomic structure and opto-electronic properties
Farebné centrá v diamante – korelácia medzi atómovou štruktúrou a optoelektronickými vlastnosťami
| Duration: | 1. 9. 2024 - 31. 12. 2027 |
| Evidence number: | APVV-23-0361 |
| Program: | APVV |
| Project leader: | Ing. Izsák Tibor PhD. |
| Annotation: | The subject of the project is in the field of quantum technologies. We will prepare and characterize optically -active defects in diamonds and correlate the atomic structures with optical properties to be used for quantum applicati ons. For a wide range of dopant concentrations, we will identify the dopant distributions and study the evolution of dopants’ configuration in-situ, during thermal annealing, using atomic-resolution microscopy and spectroscopy techniques. We will further study the effect of annealing on the opto-electronic properties by measuring photoluminescence, photocurrent and electroluminescence for the same set of samples. Graphene transparent electrodes on a diamond surface will be fabricated for phototransport measurements. Diamond-based hybrid p-i-n diodes will be prepared for electroluminescence measurements. We will focus on finding a correlation between the atomic structure and the opto-electronic properties of differently doped diamonds. This will contribute to the understanding of the fundamental relationship needed to efficiently design optically -active elements for diamond quantum devices. |
2D TMD-based heterostructures for electronic applications
Heteroštruktúry na báze 2D dichalkogenidov prechodných kovov pre elektronické aplikácie
| Duration: | 1. 1. 2025 - 31. 12. 2028 |
| Evidence number: | 2/0075/25 |
| Program: | VEGA |
| Project leader: | Mgr. Sojková Michaela PhD. |
IntegSPHD - Integrated Superconducting Photon Detectors
Integrované supravodivé fotónové detektory
| Duration: | 1. 9. 2026 - 31. 8. 2030 |
| Evidence number: | APVV-25-0223 |
| Program: | APVV |
| Project leader: | Ing. Šoltýs Ján PhD |
| Annotation: | The most advanced detectors in the visible and infrared ranges are superconducting single-photon detectors. Due to their superior detection efficiency and low dark count rate, they have become the backbone of quantum key distribution networks. They consist of a meander-shaped nanowire made from a strongly disordered superconducting film, such as NbTiN. The detection mechanism of sub-100 nm wide wires is well described by the geometric-hot spot creation model. Recently, single-photon detection using micrometer-wide strips has been demonstrated. This opens the possibility of fabricating these detectors using optical lithography, enabling larger active area detectors and high scalability. These detectors are faster, but the generated pulses are weaker. To obtain the best performance its important to amplify the signal. The state-of-the-art cryogenic microwave amplifiers are the superconducting parametric amplifiers. They employ either the nonlinearity of Josephson junctions or the kinetic inductance of disordered superconductors. These devices require thin films and fabrication methods identical to those of detectors. This opens the possibility of integrating the devices to enhance their performance and contribute to the study of the photon detection mechanism. In this project, we will explore the correlation between material properties and fabrication methods, and develop a superconducting microstrip single-photon detector and kinetic inductance parametric amplifiers to create an integrated detector. We will also focus on the development of an MgB₂ microstrip single‑photon detector, which enables detection at significantly higher temperatures. This represents an important technological advantage, for example, when using detectors in satellites. The thin film properties will be investigated using optical spectroscopy and cryogenic microwave spectroscopy, complemented by magneto-transport measurements to obtain a comprehensive understanding of their properties. |
Control of magnetic order in artificial magnonic crystal
Kontrola magnetického usporiadania topologického magnónového kryštálu
| Duration: | 1. 1. 2024 - 31. 12. 2026 |
| Evidence number: | 2/0168/24 |
| Program: | VEGA |
| Project leader: | Mgr. Feilhauer Juraj PhD. |
| Annotation: | As one of its most unique features, the bulk of the 2D topological insulator is insulating while its edges host conducting symmetry-protected states robust against imperfections. These edge states are unidirectional (i.e. immune against back-scattering), which makes them promising candidates for the low-dissipation information carriers in future information-processing devices. Recently, we have proposed a theoretical model of a ferromagnetic artificial crystal hosting topological spin waves (magnons), where the unidirectional edge states exist in a wide range of frequencies. The geometry of our magnonic crystal (MC) is simple and should be experimentally realizable. However, one of the main challenges is to prepare an MC in a correct magnetic order, where the magnetizations of the elements forming a unit cell circulate with the same chirality in all cells of the crystal. The main goal of this project is to find a reliable protocol based on thermal annealing providing the desired magnetic state of our MC. |
QUTEMOHBON - Quantum Technology Made of Hexagonal Boron Nitrides
Kvantová technológia vyrobená z hexagonálnych nitridov bóru
| Duration: | 1. 5. 2026 - 30. 4. 2029 |
| Evidence number: | SoE-2026-03 |
| Program: | Centrá excelentnosti SAV |
| Project leader: | Mgr. Hutár Peter PhD. |
PICT - Photonics-inspired control of quantum transport through layered metallic media
Kvantový transport vo vrstvených kovových systémoch založený na interferenčných fotonických princípoch
| Duration: | 1. 9. 2026 - 31. 8. 2030 |
| Evidence number: | APVV-25-0276 |
| Program: | APVV |
| Project leader: | RNDr. Španková Marianna PhD |
| Annotation: | This project establishes a novel paradigm for controlling quantum electronic transport in engineered metallic media by translating principles from photonic systems into the domain of quantum electronics. The core objective is to design metallic multilayers comprising normal (NM = Al, Ag), ferromagnetic (FM = Co, Ni, NiCu), and superconducting (SC = NbN, NbTiN) metals to harness wave-interference phenomena such as transmission eigenchannel engineering, disordermediated coherence, and topologically protected edge states. By intentionally introducing structural and magnetic disorder at interfaces, the project aims to create dissipation-suppressed, robust charge transport channels, thereby advancing quantum electronics through interdisciplinary conceptual synthesis. Expected outcomes include demonstration of longrange quantum coherence in disordered metallic systems and experimental validation of topologically robust edge modes carrying dissipationless supercurrents. These results could enable a new generation of quantum electronic devices, directly addressing thermal bottlenecks in cryogenic electronics. By redefining disorder as a design resource rather than a limitation, the project bridges quantum optics and condensed matter physics, fostering a unified framework for wave interference in disparate systems. Societally, the proposed platform supports sustainable quantum infrastructure, while training early-career researchers in hybrid quantum materials. The project builds on the applicants’ preliminary results proving the emergence of SQUID-like edge modes in NM/FM-based periodic structures. Its feasibility is underpinned by robust fabrication protocols, advanced metrology, and international collaborations. Successful realization will pioneer a materials platform with engineered disorder and interference principles. This work represents a foundational step toward transforming quantum electronics by integrating topological concepts and disorder-by-design strategies. |
MEGA-UV - MOCVD heteroepitaxy and defect analysis of Ga2O3 films for advanced deep UV sensing
MOCVD heteroepitaxia a analýza porúch tenkých vrstiev Ga2O3 pre pokročilé detektory UV-C žiarenia
| Duration: | 1. 7. 2026 - 30. 6. 2028 |
| Evidence number: | SK-UA-25-0079 |
| Program: | APVV |
| Project leader: | Mgr. Kozak Andrii PhD. |
| Annotation: | Solar-blind photodetectors (PDs) operating in the deep UV (DUV) range are critical for environmental monitoring, fire detection, and high-voltage inspection. Their technological significance lies in the ability to operate within the 200–280 nm spectral window, where the ozone layer absorbs solar radiation. This creates a natural noise-free background, enabling the detection of weak signals without interference from sunlight. While β-Ga2O3 offers superior radiation hardness and an ultra-wide bandgap ideal for these applications, its performance is currently limited by epitaxial defects - specifically Inplane Rotational Domains (IRDs) arising from heteroepitaxy on hexagonal substrates and intrinsic point defects that hinder conductivity control. To address these challenges and achieve maximum effect, this project unites the complementary expertise of the Institute of Electrical Engineering and the Institute of Semiconductor Physics. The research is aimed at the growth and characterization of β-Ga2O3 thin films to fabricate highly sensitive PDs operating in the DUV range. The main focus will be on MOCVD heteroepitaxy, with an emphasis on substrate engineering, deposition parameter optimisation, and precursor selection to minimise IRDs and enhance structural quality. For this purpose, comprehensive studies of the structure, optical, and electrical properties, as well as the morphology of the films, will be carried out with a detailed analysis of the film defect state. Based on the optimised films, photodetectors in the Metal-Semiconductor-Metal structure with different types and configurations of contacts (Ohmic and Schottky) will be created. The mechanisms of charge transfer, contact properties, and efficiency and stability of the devices will be determined. The obtained results will contribute to the creation of efficient and reliable DUV PDs for advanced sensing applications. |
NovelTHz - Novel heterostructures for (sub)THz electronics
Nové heteroštruktúry pre (sub)THz elektroniku
| Duration: | 1. 9. 2025 - 31. 8. 2029 |
| Evidence number: | APVV-24-0166 |
| Program: | APVV |
| Project leader: | Ing. Kuzmík Ján DrSc. |
| Annotation: | The speed and complexity of Si CMOS digital logic circuits was kept increasing by shrinking the Si MOSFET transistors, but this cannot be continued in the future. Further progress, essential for higher capacity and energy efficient computers, may be realized by replacing the n-type MOSFET transistor channel with a III-V semiconductor providing a significant increase of the electron velocity. Similarly, there is an increasing interest in using THz frequencies in ultra-high-speed information and communication systems, such as wireless communication, or in infra-red imaging systems and spectroscopy detection. InN has been recognized as a far-reaching candidate for ultra-high-speed electronics since almost two decades ago. Indeed, very recently these expectations were supported by us extracting the electron drift velocity of 1 ×10e8 cm/s in 775-nm thick molecular-beam epitaxygrown InN, the highest ever reported value in any semiconductor material. Unfortunately, because of the large lattice misfit to typically used GaN templates, thinner InN layers suffer from large density of defects and low electron mobility and consequently, no InN-based microwave high-electron mobility transistor has been demonstrated yet. The proposed project aims on extending our present vast knowledge in the field of the physics, growth and implementation of InN-channel heterostructures and to promote novel epitaxial techniques which are Základný výskum / Basic research APVV-24-0166 Akronym: NovelTHz 11.09.2025 11:28 Strana/Page: 2 VV 2024 necessary for ultra-high-speed electronics of (sub)THz frequency range being viable. We aim particularly on enhancement of the crystallographic and material quality of proposed heterostructures by implementing novel MOCVD techniques such as: i/ Flow modulation epitaxy, ii/ Growth on variously inclined sapphire, iii/ Heterostructures capping and charge manipulation by polarization, and aim to achieve iv/ Demonstration and qualification of novel III-N heterostructures for (sub)THz transistor electronics. |
New hybrid semiconductor structures for ionizing radiation detection
Nové hybridné polovodičové štruktúry pre detekciu ionizujúceho žiarenia
| Duration: | 1. 1. 2024 - 31. 12. 2027 |
| Evidence number: | 2/0063/24 |
| Program: | VEGA |
| Project leader: | Mgr. Zaťko Bohumír PhD |
OSCAR - Operando Solid-electrolyte Cathode Analysis and Reliability
Operando analýza a spoľahlivosť katódy s pevným elektrolytom
| Duration: | 1. 9. 2026 - 31. 8. 2029 |
| Evidence number: | APVV-25-0514 |
| Program: | APVV |
| Project leader: | Ing. Hudec Boris PhD. |
| Annotation: | All-solid-state batteries (ASSBs) offer superior energy density and safety over liquid-electrolyte systems, but face significant stability bottlenecks in the cathode mixture. The primary challenge is the thermodynamic and electrochemical incompatibility between cathode active materials (CAMs) and solid-state electrolytes (SSEs), where performance is limited by interfacial degradation rather than bulk material properties. To address this, researchers use interfacial engineering, applying protective coatings to CAMs to prevent parasitic reactions. Additionally, using oxidatively stable catholytes and compositional tuning (like fluoride or oxide doping) helps expand the electrochemical window by forming passivating interphases. The OSCAR project aims to quantify the efficacy of these surface modifications in suppressing side reactions. By using real-time structural and impedance monitoring, the project provides a diagnostic framework to validate and enhance the long-term cycling performance of next-generation batteries. |
ROTOLES - Optimised growth and the transport and optical properties of thin layers of selected topological semimetals
Optimalizovaný rast a transportné a optické vlastnosti tenkých vrstiev vybraných topologických polokovov
| Duration: | 1. 7. 2024 - 30. 6. 2027 |
| Evidence number: | APVV-23-0564 |
| Program: | APVV |
| Project leader: | Dr. rer. nat. Hulman Martin |
| Annotation: | One of the fundamental results of quantum mechanics in the 1920s was the derivation of relativistic equations for massive fermions (Dirac), massless fermions (Weyl) and fermions that are themselves antiparticles (Majorana). Since those times, particle physics has been searching for particles representing Weyl and Majorana's fermions. However, their search has not yet been successful. In the last twenty years, it has been shown that the band structure of some materials has such unique characteristics that the charge carriers in them can behave according to the dynamics satisfying the Dirac or Weyl relativistic equations. Such materials include compounds from the group of transition metals dichalcogenides, which we will focus on in our project. We will work with very thin layers of selected materials from this group, such as PtSe2, MoTe2 and WTe2. The first step in the implementation of the project will be the preparation of such layers by chalcogenisation of thin films of transition metals. Their transport and optical properties will then be thoroughly investigated. Temperaturedependent transport measurements can show us transitions between different structures of the same material. We expect that a metal-insulator transition can be observed when the thickness of such thin films is varied. Some of these materials can go into a superconducting state at very low temperatures. We will also try to induce this state in close proximity, i.e. when the thin layer is in contact with another superconductor. Optical measurements will be correlated with transport measurements. We derive essential frequency-dependent characteristics, such as optical conductivity, from the latter. We will look for characteristics theoretically predicted for Dirac and Weyl fermions in the optical conductivity. |
PIRADUNEW - Perspective ionizing radiation detectors for the uncovered neutron energy window
Perspektívne detektory ionizujúceho žiarenia pre nepokryté energetické okno neutrónov
| Duration: | 1. 7. 2023 - 30. 6. 2027 |
| Evidence number: | APVV-22-0382 |
| Program: | APVV |
| Project leader: | Mgr. Zaťko Bohumír PhD |
| Annotation: | The subject of the presented project is the optimization and preparation of semiconductor detection structures based on 4H-SiC and polycrystalline diamond suitable for neutron detection. As part of the project, single detectors will be prepared and investigated, especially for neutron energies from 100 keV to several MeVs. There are currently few sensitive detectors in this area of neutron energy. The advantages of SiC and polycrystalline diamond are the high radiation and temperature resistance of structures. The high spectrometric capability of SiC detectors is also important, especially when detecting neutrons with energies below 1 MeV. Polycrystalline diamond is m ore affordable than SiC, and our first preliminary results show its promising detection properties, especially when detecting ionizing particles. Another advantage of both types of semiconductors is the low sensitivity to gamma radiation, which is almost always present in the event that neutrons are formed during a nuclear reaction. This gamma ray enhances the background and impairs the sensitivity of the detectors currently in use. Pixel sensors for the Timepix/Medipix reading chip will also be developed and investigated. Prototypes of the radiation camera will be tested and calibrated using a monoenergetic neutron source. |
Advanced heterostructures based on wide-bandgap semiconductors for radiation detector applications operating in harsh environments
Pokročilé heteroštruktúry na báze polovodičov so širokým zakázaným pásmom pre radiačné detektory určené na prevádzku v extrémnych podmienkach.
| Duration: | 1. 1. 2026 - 31. 12. 2027 |
| Evidence number: | APD0163 |
| Program: | PostdokGrant |
| Project leader: | Ing. Talacko Marcel PhD. |
GPH-Lub - Advanced graphene-based polymer hybrids for environment-adaptive lubrication
Pokročilé polymérne hybridy na báze grafénu pre environmentálne adaptívne mazanie
| Duration: | 1. 9. 2026 - 31. 8. 2030 |
| Evidence number: | APVV-25-0739 |
| Program: | APVV |
| Project leader: | Mgr. Kozak Andrii PhD. |
| Annotation: | Friction, adhesion, and wear are common phenomena that appear in all moving systems. It was estimated that more than 20% of all the generated energy is wasted to overcome the friction lost, and up to 38% can be saved by using new materials, efficient lubrication or harvesting the energy emitted by the moving systems. In extreme environments, where the liquid lubricants lose their efficiency, the most effective are solid lubricants. The surfaces covered by polymer brushes were recognized as excellent solid lubricants at the nanoscale. The arrangement of brushes in dense regime was observed to provide ultra-low coefficient of friction. Such performance originates from suppressed entanglements between polymers. This effect is more pronounced in presence of fluorine atoms, which contribute to repulsion between brushes. The combination of structural and chemical factors was recognized to lead to ultra-low friction when grafted on Silicon wafer, but still not observed at macroscale. This project aims the investigation of tribological properties of hybrids formed by solid core and polymer shell brushes. Compared to common polymer coatings, the proposed hybrid lubricants are easily transferable and applicable and robust for production. Graphene has good tribological properties in ambient air and vacuum but difficult to modify due to absence of functional groups. Therefore, the oxidized form (GO) which offers more controllable mechanical, electrical, and tribological properties will be used to covalently attach the polymer brushes. The synergetic effect of particle core and brush structure will be investigated. Grafted bulk, mono-, and few layered GO by brushes with various content of fluorine atoms and length will be compared. We assume that combination of suitable particle core and polymer modification will lead to novel materials with lubrication properties providing the ultra-low coefficient of friction and similar performance under vacuum and ambient conditions. |
Preparation and properties of superconducting, magnetic and dielectric oxide films and structures for modern electronic applications
Príprava a vlastnosti supravodivých, magnetických a dielektrických oxidových vrstiev a štruktúr pre moderné elektronické aplikácie
| Duration: | 1. 1. 2025 - 31. 12. 2026 |
| Evidence number: | PAS-SAS-2024-06 |
| Program: | Vedecko-technické projekty |
| Project leader: | Ing. Chromik Štefan DrSc. |
Designing superconducting coils for electromagnetic propulsion systems
Projektovanie supravodivých cievok pre elektromagnetické pohonné systémy.
| Duration: | 1. 1. 2026 - 31. 12. 2027 |
| Evidence number: | APD0224 |
| Program: | PostdokGrant |
| Project leader: | MSc. Dadhich Anang PhD. |
PULSAR - PULSed laser deposition of large ARea 2D materials heterostructures for high performance electronics
Pulzná laserová depozícia veľkoplošných heteroštruktúr 2D materiálov pre vysoko výkonnú elektroniku
| Duration: | 1. 1. 2025 - 31. 12. 2026 |
| Evidence number: | CNR-SAS-2024-06 |
| Program: | Vedecko-technické projekty |
| Project leader: | RNDr. Španková Marianna PhD |
STEPHANIK - Slovak Technical Ecosphere Platform
Slovenská technická ekosférická platforma
| Duration: | 1. 4. 2025 - 30. 6. 2027 |
| Evidence number: | 09I02-03-V01-00038 |
| Program: | Plán obnovy EÚ |
| Project leader: | Ing. Hudec Boris PhD. |
| Annotation: | The main objective of the STEPHANIK Project is to stimulate swifter grow of Slovak space-oriented industry and research sector, accomplished via close collaboration and coordination between all relevant entities (mainly industry and academia) and with strong involvement of excellent international partners bringing beyond state of art methods and approaches to Slovak space ecosystem. The main research mission of the Project is to achieve the proposal of the design of a modular satellite that will be fully compatible with future European responsive space system able to place small satellites in various types of orbits within a short notice in order to address specific operational needs and capability gaps stemming from shortage, failures and damages of existing space assets. |
| Project web page: | https://www.stephanik.eu/ |
High kinetic inductance superconductors for quantum circuits applications
Supravodiče s vysokou kinetickou indukčnosťou pre aplikácie v kvantových obvodoch
| Duration: | 1. 11. 2024 - 30. 10. 2027 |
| Program: | Iné projekty |
| Project leader: | Ing.Mgr. Janík Marián PhD. |
Epitaxial layer overgrowth (ELOG) and slanted gate field plate technologies for Ga₂O₃ power-electronic devices
Technológie epitaxialneho dorastania vrstiev (ELOG) a šikmej poľovej platne hradla pre výkonové elektronické zariadenia na báze Ga₂O₃.
| Duration: | 1. 1. 2026 - 31. 12. 2027 |
| Evidence number: | APD0196 |
| Program: | PostdokGrant |
| Project leader: | Ing. Sobota Michal PhD. |
Thermal stability of superconducting coils and filamentized REBCO tapes
Tepelná stabilita supravodivých cievok a filamentovaných REBCO pások
| Duration: | 1. 1. 2024 - 31. 12. 2026 |
| Evidence number: | 2/0098/24 |
| Program: | VEGA |
| Project leader: | Mgr. Seiler Eugen PhD |
| Annotation: | The project investigates electro-thermal stability of filamentized superconducting REBCO tapes and superconducting coils at transporting the electric current. The goal is to develop theoretical models and numerical methods allowing to determine the maximum transport current that can flow through a superconducting coil or through a filamentized tape without the risk of a rapid local heating. Characterization of tapes and coils will be based on the standard measurement methods as well as on specially designed experiments, which will allow to incorporate the real parameters of available superconducting tapes into the models. In order to experimentally verify the theoretical models of thermal stability of superconducting coils, specific model coils will be built, equipped with multiple voltage and temperature sensors for detailed monitoring of the electro-thermal stability. The outcomes of the theoretical models will subsequently be applied at manufacturing bigger coils, relevant for realistic electric devices. |
Thermal management in Ga2O3 based electronic and optoelectronic devices
Tepelný manažment elektronických a optoelektronických súčiastok na báze Ga2O3
| Duration: | 1. 1. 2025 - 31. 12. 2028 |
| Evidence number: | 2/0156/25 |
| Program: | VEGA |
| Project leader: | Ing. Ťapajna Milan PhD. |
| Annotation: | Ga2O3 represents a promising semiconductor material for future high-power electronic devices and UV and X-ray detectors. A major drawback of Ga2O3 is its low thermal conductivity, which may represent a challenge in thermal management of power devices operating in the ON state. The aim of this project is to develop advanced strategies for thermal management in Ga2O3 based electronic and optoelectronic devices. First, we will focus on the growth development of Ga2O3 layers on high-thermally conductive (HTC) substrates such as SiC and diamond using three different CVD methods. We will investigate and optimize transport and thermal properties of the Ga2O3 layer and Ga2O3/HTC substrate thermal boundary conductance. The second goal is to develop technology for CVD growth of synthetic udoped diamond heat-spreading layer on the Ga2O3 based electronic devices. Finally, we will develop heteroepitaxial pn photodiodes based on all-polycrystalline p-type diamond/n-type Ga2O3 heterostructure for solar-blind photodetectors. |
TECHAPHO - Ternary chalcogenide perovskites for photovoltaics
Ternárne chalkogenidové perovskity pre fotovoltaiku
| Duration: | 1. 7. 2024 - 30. 6. 2028 |
| Evidence number: | APVV-23-0202 |
| Program: | APVV |
| Project leader: | Ing. Chromik Štefan DrSc. |
| Annotation: | The goal of the proposed project is the synthesis of ternary chalcogenides with perovskite structure and systematic characterization of the relationship between the composition, structure, optical properties, thermal and chemical stability with the potential in the application in photovoltaics, or other optoelectronics. The result will be a set of prepared pure ternary chalcogenides in the form of crystalline powders and thin films with known, as well as newly prepared compositions and a comprehensive characterization of their optical and electronic properties, as well as thermal and chemical stability. Ternary chalcogenides will be prepared also by wet approach at lower temperature up to 350 °C in the form of nanocrystals which will be characterized in terms of their structure and morphology. Proof-of-concept solar cell will be prepared, which has not yet been reported in the literature. The optimalization will be done based on performance measurements. |
ToMaNGeD - Topological Materials for Next-Generation Devices
Topologické materiály pre prvky novej generácie
| Duration: | 1. 7. 2025 - 30. 6. 2027 |
| Evidence number: | DS-FR-24-0059 |
| Program: | APVV |
| Project leader: | Dr. rer. nat. Hulman Martin |
Ultra-thin (few-layer) TMD films for electronic applications
Ultratenké (niekoľkovrstvové) TMD vrstvy pre elektronické aplikácie
| Duration: | 1. 1. 2026 - 31. 12. 2026 |
| Program: | Návratová projektová schéma |
| Project leader: | Mgr. Laurenčíková Agáta PhD. |
| Annotation: | The project aims to improve the chemical and physical properties of transition metal dichalcogenide (TMD) few-layer films by addressing two key challenges: chemical degradation and poor crystallinity, with a particular emphasis on optoelectronic applications. The concept of synthesizing TMDs beneath a graphene (G) layer, which acts as a protective shield, offers a promising route toward more stable, high-quality materials. A one-step process that directly forms the TMD-G heterostructure on the substrate could enhance preparation efficiency. In this approach, thin metal layer is covered by layer of graphene oxide and subsequently annealed in presence of chalcogen. Under these conditions, graphene oxide is reduced to graphene, while TMD layer is formed. Graphene will serve as a protective layer, preventing oxidation/reduction of the TMD layer. This method holds potential for producing stable, high-performance TMD films suitable for advanced optoelectronic devices. |
Vertical GaN MOS transistors with semi-insulating channel and enhanced off-state breakdown performance
Vertikálne GaN MOS tranzistory s poloizolačným kanálom pre zvýšenie prierazného napätia vo vypnutom stave
| Duration: | 1. 1. 2026 - 31. 12. 2029 |
| Evidence number: | 2/0112/26 |
| Program: | VEGA |
| Project leader: | Ing. Stoklas Roman PhD. |
| Annotation: | This project aims to address the inherent challenges of vertical GaN MOS transistor performance by addressing key challenges such as breakdown voltage, channel mobility and overall device performance. Novel innovative approaches include semi-insulating channels, advanced edge termination, passivation, and AlN/GaN overgrowth, to develop a high-performance device suitable for high-power applications. The successful completion of this project will provide valuable insights into enhancing GaN-based power electronics and help establish a foundation for future device advancements. |
PowerGaN - Vertical GaN Power Devices with Semi-Insulating Channel and Innovative 3D Gate-Source Architecture for Increased-Switching Performance
Vertikálne GaN súšiastky s poloizolačným kanálom a inovatívnou 3D gatesource architektúrou pre výkonové aplikácie
| Duration: | 1. 9. 2026 - 31. 8. 2030 |
| Evidence number: | APVV-25-0353 |
| Program: | APVV |
| Project leader: | Ing. Stoklas Roman PhD. |
| Annotation: | This project aims to develop and characterize next-generation vertical GaN power transistors leveraging semi-insulating (SI) channel layers, which can minimize leakage, improve electric field spreading, and allow higher breakdown voltages with reduced defect-related leakage compare with lateral power devices. Innovative device layouts such as Gate-All-Around (GAA) and Source-All-Around (SAA) structures to further improve gate control and thermal spreading, potentially reducing parasitic capacitance and enhancing switching speed. were be analyzed. Through epitaxial engineering including channel overgrowth, novel contact designs, and process optimization, we target devices with ultra-low on-resistance, enhanced blocking voltage, improved reliability, and reduced dynamic switching losses suitable for automotive, industrial, and renewable energy applications. |
ViPVyTS/MuTaHiTS - Multiple-tape high temperature superconducting coils for superconducting motors and magnets
Viacpáskové vysokoteplotné supravodivé cievky pre supravodivé motory a magnety
| Duration: | 1. 9. 2025 - 31. 8. 2029 |
| Evidence number: | APVV-24-0654 |
| Program: | APVV |
| Project leader: | Mgr. Pardo Enric PhD. |
PEROVCHIR - Effect of the application of organic molecules on the properties of perovskite thin-film structures
Vplyv aplikácie organických molekúl na vlastnosti perovskitovských tenkovrstvových štruktúr
| Duration: | 1. 7. 2024 - 31. 12. 2027 |
| Evidence number: | APVV-23-0238 |
| Program: | APVV |
| Project leader: | RNDr. Španková Marianna PhD |
| Annotation: | In recent years, sufficient experimental evidence has accumulated that adsorbed organic chiral molecules affect the superconducting properties of YBa2Cu3O7-x (YBCO) films. In some cases, an increase in their critical temperature Tc can be observed. On the other hand, it has been shown that in the case of ferromagnetic layers (e.g., cobalt), the application of chiral molecules can lead to a change in magnetization without the use of an electric current. An important role here is played by spin. Spin introduces an additional degree of freedom into the system, allowing devices, for example, to reduce electrical consumption or increase their computational capacity. Spintronic devices have become an attraction in electronics; however, problems associated with controlling spin remain a significant challenge. A unique way of manipulating spin is through the effect known as chirality-induced spin selectivity (CISS), which results from the specific structure of organic chiral molecules. The project focuses on the preparation and characterization of simple heterostructures and their interaction with chiral polymers deposited on the film surface. Specifically, it deals with the influence of chiral lactic acid on perovskite thin films, where the selected perovskites are high-temperature superconductor YBCO and ferromagnet La1-xSrxMnO3 (LSMO). |
Effect of Stabilizer Thickness on Filamented Superconducting REBCO Tape Stability
Vplyv hrúbky stabilizačnej vrstvy na stabilitu filamentovaného supravodivého REBCO pásu
| Duration: | 1. 1. 2026 - 31. 12. 2027 |
| Evidence number: | APD0231 |
| Program: | PostdokGrant |
| Project leader: | Ing. Kucharovič Martin PhD. |
GO4HV - Gallium oxide power transistors for high-voltage operation
Výkonové tranzistory na báze oxidu galitého pre vysokonapäťové aplikácie
| Duration: | 1. 9. 2025 - 31. 8. 2029 |
| Evidence number: | APVV-24-0325 |
| Program: | APVV |
| Project leader: | Ing. Gucmann Filip PhD. |
| Annotation: | In this project we will design, fabricate and test new Gallium oxide (GaO)-based power switching metal-oxidesemiconductor field-effect transistor (MOSFET) devices for high-voltage operation. We will develop high-quality epitaxial GaO films on sapphire, SiC, and AlN/Si substrates using newly-purchased commercial Aixtron CCS MOCVD system capable of growth on 2-4 inch wafers. One of the main focuses of the project will be on the improvement of heteroepitaxial GaO films, targeting the engineering of in-plane rotational domains (IRDs), typically present when GaO is grown on standard foreign substrates with hexagonal surface symmetry. We will systematically optimize the growth parameters and introduce engineered substrates to break the surface symmetry, allow for epitaxial lateral overgrowth, and promote the growth of specific GaO crystal orientations. As a result, we expect lowered density of dislocations in GaO films and improved mobility of charge carriers, effectively increasing output current in the fabricated MOSFETs. By means of by TCAD-based electrothermal simulations we will focus on MOSFET design to achieve breakdown voltage >1 kV by introduction of various field plate structures, while maintaining the low on-state resistance. Device layout will also be optimized do achieve enhanced thermal Základný výskum / Basic research APVV-24-0325 Akronym: GO4HV 04.02.2025 15:35 Strana/Page: 2 VV 2024 performance for improved device reliability and lifetime. Using the optimized device structure, MOSFETs will be fabricated via conventional photolightography, dry etching, PVD, ALD, and PE-CVD deposition techniques. Electrical properties including device reliability and breakdown will be analysed and used to verify the TCAD simulations and further improve design of the GaO MOSFETs. |
Research and development of materials and structures based on nanostructured transition metal chalcogenides for supercapacitor applications
Výskum a vývoj materiálov a štruktúr na báze nanoštruktúrnych chalkogenidov prechodných kovov pre superkapacitorové aplikácie
| Duration: | 1. 1. 2024 - 31. 12. 2027 |
| Evidence number: | 1/0707/24 |
| Program: | VEGA |
| Project leader: | Mgr. Sojková Michaela PhD. |
| Annotation: | The project is focused on the research of nanostructured transition metal chalcogenides (TMC) and their use in applications for energy storage. The task is to gain new knowledge in the preparation of NiSx, NiSex, MoS2, MoSe2, etc. and their heterostructures and composites with selected oxides, hydroxides and/or carbon materials and in the development of nanostructured hierarchical electrodes to improve conductivity, morphology, and electrochemical properties for supercapacitor (SC) applications. Within the project, the expertise in the field of growth, material, and electrochemical characterization of the workplaces of FEI STU and IEE SAV will be connected. The knowledge gained will be used in the preparation and analysis of model electrodes and asymmetric hybrid SC with the aim to increase capacity, energy density and analysis of degradation mechanisms. Materials will also be tested for hydrogen generation. The task is also to gain knowledge in the field of development of models for control of SC devices. |
HITECOM - High-temperature metal matrix composites reinforced with continuous oxide network
Výskum vysokopevných ultra-jemnozrnných kompozitov spevnených kontinuálnou sieťou oxidov
| Duration: | 1. 9. 2026 - 31. 8. 2029 |
| Evidence number: | APVV-25-0660 |
| Program: | APVV |
| Project leader: | Ing. Hudec Boris PhD. |
| Annotation: | Dynamic advances in transport, energy, and biomedicine place increased demands on the development of new highstrength, thermally stable metallic materials with innovative strengthening mechanisms that provide the required strength at higher temperatures and creep resistance. One possible solution is a new type of metal matrix composite (MMC) strengthened by a continuous oxide network, prepared by powder metallurgy (PM) from atomized powders, the development of which is the primary goal of the project. Research on Al composites with a network of native a-Al2O3 (HITEMAL) showed exceptional thermal stability and good mechanical properties up to 450°C. For this material, we will increase the strength and thermal stability up to 600°C by modifying native Al2O3 on the surface of Al powders using atomic layer deposition (ALD) and chemical nucleation deposition (CND, deposition in solution), which is more suitable for fine powders with a high tendency to agglomerate. We will prepare oxide coatings (Al2O3, TiO2, SiO2, or SiO2-doped Al2O3) with a thickness of 5-50 nm. From them, bulk MMC will be prepared by PM in a manner that preserves the network's continuity; subsequently, mechanical properties, creep, and thermal stability will be tested, and the microstructure analysed. We will create a model of this MMC that describes the influence of powder size, layer thickness, and type, and optimize the microstructure and properties. Secondly, the application of the HITEMAL concept to other metals (Ti, Mg, Zn, Cu, and Ni) will be verified by using native oxides on the powders' surfaces or by applying an Al2O3 layer to achieve the desired combination of strength and ductility. The project will also compare coatings prepared using ALD and CND technologies, and we expect a shift in CND development from TRL3 to 5. The project will provide unique scientific insights into the properties of MMCs with continuous networks and establish a theoretical basis for their future applications. |
KIPAMoSi - Development of On-chip Integrated Kinetic-Inductance Parametric Amplifier for Single-Photon Detectors
Vývoj parametrického zosilňovača s kinetickou indukčnosťou integrovaného na čipe pre jednofotónové detektory
| Duration: | 1. 7. 2026 - 30. 6. 2028 |
| Evidence number: | SK-UA-25-0089 |
| Program: | APVV |
| Project leader: | Ing. Šoltýs Ján PhD |
| Annotation: | The project focuses on the development of methods and technological features for the production of a superconducting nanowire single-photon detectors (SNSPDs) with an on-chip integrated parametric amplifier. Such integration will provide system compactness, noise reduction, and enhanced sensitivity detectors. The research is based on technological developments of thin amorphous superconducting MoSi films with the nonlinearity of kinetic inductance. The project will investigate the influence of film thickness, stoichiometry, and substrate properties on the characteristics of the parametric amplifier and the detection structure. This can extend spectral sensitivity and improve detection performance compared to conventional SNSPD materials. Studying the high-frequency properties of such films will make it possible to develop a traveling-wave parametric amplifier and integrate it on a single chip with SNSPDs. Combining the expertise of the Ukrainian and Slovak teams in nanostructure fabrication and characterization will ensure improved efficiency of SNSPDs and their applications in quantum communication and telecommunications. |
Development of Ga2O3 epitaxy on different substrates and Schottky barrier diodes with enhanced reliability
Vývoj technológií epitaxie Ga2O3 na rôzne substráty a Schottkyho diód so zlepšenou spoľahlivosťou
| Duration: | 1. 7. 2025 - 30. 6. 2028 |
| Evidence number: | SK-TW-RD-24-0006 |
| Program: | APVV |
| Project leader: | Ing. Ťapajna Milan PhD. |
ZnižStrStr - Reduction of AC losses in a cable model made of striated hightemperature superconductors
Znižovanie striedavých strát v modeli kábla zo zväzku filamentovaných vysokoteplotných supravodičov
| Duration: | 1. 9. 2025 - 31. 8. 2029 |
| Evidence number: | APVV-24-0061 |
| Program: | APVV |
| Project leader: | Mgr. Seiler Eugen PhD |
| Annotation: | High-temperature superconductors based on REBCO (Rare Earth Barium Copper Oxide) are used in magnet windings for devices with high magnetic fields (>10 T) such as particle accelerators or nuclear fusion reactors. During the operation of these devices, alternating current (AC) losses occur and REBCO tapes are affected by cyclic electromagnetic forces, arising during the time change of the magnetic field, which can cause failure of the device. The aim of this project will be the development of a striated REBCO tapes and a TORT (Tapes on Round Tube) type cable with low AC losses and high mechanical toughness (for example fatigue strength). We plan to achieve the reduction of AC losses by striating the REBCO tape and altering the material of the cable former. However, after such process, it is necessary to protect the striated REBCO layers with an additional (multi)layer for the purpose of chemical and thermal stabilization. The former of the cable will be 3D printed from a composite Základný výskum / Basic research APVV-24-0061 Akronym: ZnižStrStr 23.09.2025 10:50 Strana/Page: 2 VV 2024 material based on PETG CF (polyethylene terephthalate glycol reinforced with carbon fiber), with much lower electrical conductivity than previously used formers. By altering the material of the former in the TORT cable, we can reduce the total magnetization losses by decreasing the eddy currents, which were contributed by the copper former. According to numerical calculations (ANSYS, COMSOL), we apply the corresponding mechanical load to REBCO tapes (untreated/striated) and cables from these REBCO tapes. Afterwards, we determine the mechanical toughness of the cables, which will be optimized by studying the REBCO tape damage using SEM, FIB, XPS and ERDA methods. A successful production of a short TORT cable with a stabilization (multi)layer wound on a composite former will be a confirmation of the suitability of this cable concept. By combining the above materials, we can create an innovative superconducting cable with significantly reduced AC losses and high mechanical toughness. |
Projects total: 46