Institute of Electrical Engineering SAS
III-N quantum structures for new generation of fast tranzistors and logic circuits
Electronics and Photonics
Name of the supervisor
Ing. Ján Kuzmík, DrSc.
Faculty of Electrical Engineering and Information Technology, Slovak University of Technology in Bratislava
Goal of the work will be proposal, processing and characterization of quantum well structures for a new generation ultra-fast electronics. Strongly polar material system based on III-N semiconductors containing In(Al)N will be exploited. Properties of transistors will be studied as a function of used substrate (sapphire, SiC, homoepitaxy on GaN), selected processing of the gate contact (Schottky contact versus MOS), and for various threshold voltage value (normally-on mode versus normally-off). Work will be a part of EU projects Nanomat and Agami_Eurigami.