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PhD. Topics

Institute of Electrical Engineering SAS

Topic
Growth and properties of III-N quantum structures for fast electronic
PhD. program
Electronics and Photonics
Name of the supervisor
Ing. Ján Kuzmík, DrSc.
Contact:
Receiving school
Faculty of Electrical Engineering and Information Technology, Slovak University of Technology in Bratislava
Annotation
Topic of the work deals with the growth and investigations of epitaxial III-N quantum structures prepared by metal-organic chemical-vapor deposition. GaN, as a constituting member of III-N family, is a most dynamically developed material in semiconductor industry marked by a Nobel Prize for invention of blue/white LEDs. Presently III-Ns attract a lot of interest also for applications in power, high frequency and automotive electronics.
Compounds based on III-N (GaN, AlN, InN) and its combinations facilitate preparation of countless heterostructures showing quantum effects. In particular, 2-dimensional charge carrier gas can be created having high density and mobility, which are crucial aspects for future electronic devices. Similarly, InN represents the material with the highest electron drift velocity among all common semiconductors.
Work will be focused on mastering the growth at the state-of-the-art AIXTRON system. Main emphasize will be given to heterostructure quantum wells containing In(Al)N for future ultra-fast transistors, as well as preparation of the channel layer based on InN. Material study will include several techniques for structural, electrical and optical investigations. PhD study will be accomplished by processing and demonstration of test structures and innovative electronic devices.