Institute of Electrical Engineering SAS
Topic
Technology and characterization of vertical switching GaN transistors
PhD. program
Electronics and Photonics
Name of the supervisor
Ing. Ján Kuzmík, DrSc.
Contact:
Receiving school
Faculty of Electrical Engineering and Information Technology, Slovak University of Technology in Bratislava
Annotation
Massive deployment of III-N based switching transistors promises huge world-wide energy savings. This anticipation stems from material parameters of III-N semiconductors. Consequently, III-N based transistors show extremely efficient switching performance, high robustness and temperature stability. PhD thesis will be focused on proposal, technology and analysis of normally-off vertical transistors from point of view electrical performance, safe switching performance and power maximization. Emphasize will be given to physical analyzes and technological preparation of transistors with highly positive threshold voltage as generally required by industry. Work will represent a continuation of collaboration with partners within ongoing V4-Japan project. Collaboration with partners from Taiwan is anticipated.