Institute of Electrical Engineering SAS
Topic
Influence of different substrates and buffer layers on the microstructure and electric properties of epitaxial layers of Ga2O3 and related compounds deposited via metalorganic chemical vapour deposition (MOCVD).
PhD. program
Physical Engineering
Year of admission
2024
Name of the supervisor
Ing. Alica Rosová, CSc.
Contact:
Receiving school
Faculty of Electrical Engineering and Information Technology of STU
Annotation
In recent years, Ga2O3, wide band gap semiconductor, has attracted great attention as promising material for high voltage and high-power electronic devices, short wavelength light emitting diodes, and ultraviolet semiconductor lasers. However, growth of high-quality Ga2O3 epitaxial layers on technologically-important substrates still remains a challenging task. The aim of this work will be concentrated to microstructural study of epitaxial layers of Ga2O3 and related materials deposited via metalorganic chemical vapour deposition (MOCVD) prepared at the Institute of Electric Engineering, Slovak Academy of Sciences. The microstructure of prepared Ga2O3 films will be influenced by the used substrate materials and by deposition of various buffer layers. These will result in change of the mechanical strain at the interface between Ga2O3 and substrate during the epitaxial growth. The main analytical tools used for this work will be transmission electron microscopy (TEM), scanning electron microscopy (SEM), and chemical elemental analyses with energy and wavelength dispersive X-ray spectroscopy (EDS and WDS). Also studied will be the influence of the chosen Ga2O3 growth conditions on the electrical properties of prepared films, e.g. achieved concentration of charge carriers and their mobility. The work will be carried out in the framework of a joint project with the Taiwanese partner ITRI (Industrial Technology Research Institute).