Institute of Electrical Engineering SAS
Topic
Epitaxial growth of Ga2O3 and related alloys via metalorganic chemical vapour deposition (MOCVD)
PhD. program
Electronics and Photonics
Year of admission
2024
Name of the supervisor
Ing. Filip Gucmann, PhD.
Contact:
Receiving school
Faculty of Electrical Engineering and Information Technology of STU
Annotation
Almost one third of all produced electricity passes through power electronic devices at some stage before consumption with the predicted increase up to 80 % for the next decade. Therefore, even small efficiency improvement of power electronics represents significant energy savings and reduction of carbon emissions. One of the ways to achieve higher efficiency of power electronic devices is the use of new (ultra) wide bandgap (Eg) semiconductor materials. Gallium oxide (Ga2O3) is a good example of such material – with Eg ~4.9 eV and high critical field which surpasses those of the mainstream semiconductors for power switching in the range up to several kVs (Si, SiC, GaN). Ga2O3-based devices can be also invaluable for faster deployment of electric means of transport thanks to development of faster charging systems and more efficient energy transfer between batteries and electric drivetrain.
The main focus of this thesis will be a systematic study of epitaxial growth of thin film Ga2O3 or similar materials, e.g. (AlxGa1-x)2O3 or (InxGa1-x)2O3 on various substrates (e.g. Al2O3, SiC) using metalorganic chemical vapour deposition (MOCVD) and investigation of the material properties of prepared layers (structural, electrical, and optical). For this study, we will use commercial MOCVD tool Aixtron CCS and the state-of-the-art technological equipment and methods, available at the Institute of Electrical Engineering, SAS. A successful candidate will acquire a hands-on experience with the wide range of experimental techniques for material diagnostics (e.g. X-ray diffraction, atomic force microscopy, Raman spectroscopy, and various advanced electrical methods). The work will be carried out in the framework of a joint project with the Taiwanese partner ITRI (Industrial Technology Research Institute).
The main focus of this thesis will be a systematic study of epitaxial growth of thin film Ga2O3 or similar materials, e.g. (AlxGa1-x)2O3 or (InxGa1-x)2O3 on various substrates (e.g. Al2O3, SiC) using metalorganic chemical vapour deposition (MOCVD) and investigation of the material properties of prepared layers (structural, electrical, and optical). For this study, we will use commercial MOCVD tool Aixtron CCS and the state-of-the-art technological equipment and methods, available at the Institute of Electrical Engineering, SAS. A successful candidate will acquire a hands-on experience with the wide range of experimental techniques for material diagnostics (e.g. X-ray diffraction, atomic force microscopy, Raman spectroscopy, and various advanced electrical methods). The work will be carried out in the framework of a joint project with the Taiwanese partner ITRI (Industrial Technology Research Institute).