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The list of national projects SAS

Institute of Electrical Engineering SAS
Application of the metadynamics algorithm to micromagnetism
Adaptácia algoritmu metadynamiky na problémy mikromagnetizmu
Program: VEGA
Project leader: Ing. Tóbik Jaroslav PhD.
Annotation:The subject of micro-magnetism studies are phenomena which are possible to describe on classical level of the theory. Micromagnetism describes processes in devices like bit-patterned media in harddisks, magnetic memories, magnetic radio-waves detectors, or bio and medical applications. Typical dimensions of the devices active parts are order from micro-meter to few nanometers. Typical operation temperature is room temperature. Usual model for these condition is classical physics. The main problem of the magnetic state stability simulation is the time-scale on which the magnetic state typically persist. The magnetic state in memories is stable for years. There are several effective algorithms for finding lowest energy paths among metastable states. In order to search for stable magnetic states effectively, we decided to implement matadynamics algoritm into micro-magnetic solvers.
Duration: 1.1.2018 - 31.12.2021
Building a centre for advanced material application SAS
CEMEA - Vybudovanie centra pre využitie pokročilých materiálov SAV
Program:
Project leader: Ing. Ťapajna Milan PhD.
Duration: 1.7.2019 - 30.6.2023
Real-time grow studies of hybrid van der Waals heterostructures
Časovo-rozlíšené štúdium rastu hybridných van der Waalsových heteroštruktúr
Program: SRDA
Project leader: Dr. rer. nat. Hulman Martin
Duration: 1.8.2018 - 30.6.2022
Long-range proximity effect in superconductor / ferromagnet heterostructures
Dlhodosahový jav blízkosti v supravodič/feromagnet heteroštruktúrach
Program: SRDA
Project leader: Ing. Chromik Štefan DrSc.
Duration: 1.7.2020 - 31.12.2023
Electronic and optoelectronic devices based on ultra-wide bandgap Ga2O3 semiconductor
Elektronické a optoelektronické súčiastky na báze ultra-širokopásmového Ga2O3 polovodiča
Program: VEGA
Project leader: Ing. Ťapajna Milan PhD.
Annotation:Recently, great research effort has been devoted to ultra-wide bandgap semiconductors for the preparation of high-performance electronic devices operating in the electric fields up to tens of kV and UV photodetectors. This project aims the research of the growth of epitaxial layers and electronic as well as optoelectronic devices based on Ga2O3. Based on preliminary results, we will investigate the growth of rhombohedral Ga2O3 with the highest bandgap energy. Epitaxial layers will be prepared by metal-organic chemical vapor deposition using liquid phase precursor injection. The layers will be used for preparation and research of electronic devices with a focus on Schottky diodes and switching MOSFET transistors. We will study the transport and thermal properties, parasitic effects and breakdown mechanisms of the developed electronic devices as well as electro-optical properties of p-n heterojunctions. We will also target exploratory research for improvements in thermal management of the power transistors.
Duration: 1.1.2021 - 31.12.2024
Evolution of colour centres in diamond and their properties towards quantum detection
Formovanie farebných centier v diamante a ich vlastností smerom ku kvantovej detekcii
Program: SRDA
Project leader: Ing. Varga Marian PhD.
Duration: 1.7.2021 - 31.12.2024
TMD/diamond heterostructures: Fabrication, characterization and applications
Heteroštruktúry TMD/diamant: Príprava, charakterizácia a aplikácia
Program:
Project leader: Ing. Varga Marian PhD.
Duration: 1.8.2020 - 31.7.2024
Fabrication, physics and correlated states in metallic 2D transition metal dichalcogenides
Metalické 2D dichalkogenidy prechodných kovov: príprava, štúdium vlastností a korelované stavy
Program: SRDA
Project leader: Dr. rer. nat. Hulman Martin
Annotation:The discovery of graphene in 2004 has brought a massive interest of scientists active in condensed-matter physics on research of 2D materials. Even though these materials have a long history starting already in the twenties of the 20th century, the past years have seen an intensive renascence of interest in 2D materials. Ultra-thin samples of many 2D materials have been successfully prepared with electronic properties that may exhibit correlated electronic phenomena such as charge density waves and superconductivity. One of the well-studied families of the 2D materials are transition metal dichalcogenides (TMDs). TMDs consist of hexagonal layers of metal atoms sandwiched between two layers of chalcogen atoms with a MX2 stoichiometry. In this project, we focus on those materials from the TMD family that exhibit strongly correlated electronic states: NbSe2, TiSe2, TaS2, TaSe2 and PtSe2. The goal of the project is to prepare ultrathin (≤ 10 nm) layers and bulk samples and characterise them thoroughly in terms of the thickness, crystallinity, homogeneity, optical and electronic properties. A special attention will be paid to charge density wave states and superconductivity in these materials and how they evolve with the sample thickness, doping, external electric and magnetic fields and details of the growth process. The scientific program also aims at preparing heterostructures built up of these materials as well as hybrid systems combining TMDs with other materials. This research also includes a detailed characterisation of heterostructures to provide a feedback to optimise the growth process.
Duration: 1.7.2020 - 30.6.2023
Low-loss superconducting CORC-like cable from REBCO conductors
Nízkostratový supravodivý kábel typu CORC z REBCO vodičov
Program: VEGA
Project leader: Mgr. Seiler Eugen PhD
Annotation:Aim of the project is to elaborate the design of a superconducting CORC-like cable with considerably reduced AC losses. Project is focused on identification of the key parameters of the cable design, on the construction of model cables and their experimental characterisation. The research will follow two basic directions: optimisation of geometrical layout of the individual REBCO tapes in the cable and investigation of possible utilisation of low conductivity materials for the central core of the cable. Geometrical optimisation of the cable will be based on results of numerical simulations employing the Finite Element Method and the Minimum Electro-Magnetic Entropy Production method. In the experimental part, sets of short model cables will be manufactured for tests of different geometrical configurations and different materials for the central core. Investigated will be the total AC losses, basic transport parameters and degradation of superconducting tapes due to mechanical loading in the cabling process.
Duration: 1.1.2021 - 31.12.2023
Perovskite thin films and structures for modern electronics and sensorics
Perovskitovské tenké vrstvy a štruktúry vhodné pre modern elektroniku a senzoriku
Program: VEGA
Project leader: RNDr. Španková Marianna PhD
Annotation:We prepare different types of perovskite films -ferromagnetic, superconducting, dielectric- (thickness up to 100 nm) and micro- and nano structures. YBa2Cu3Ox superconducting microstrips will be irradiated by electrons (30 keV) with the aim to create channels for easy vortex motion. We also focus on detailed study of Si/dielectric layer interface using unconventional materials (SrO, TiN) with the aim to enable epitaxial growth of buffer layers necessary for realization of uncooled microbolometers on the base of La0.67Sr0.33MnO3 films working and at frequencies in THz range. Beside the Bi4Ti3O12 studied so far different types of other buffer layers will be tested in order to develop new types of bolometers. We continue in study of perovskite superconductor S/ferromagnet F and S/F/S structures with the aim to resolve the phenomenom of S/F thin films interaction (proximity effect). The implementation of pi-type Josephson junction in digital and quantum circuits may solve some problems of superconducting qubits.
Duration: 1.1.2018 - 31.12.2021
Advanced III-N devices for energy and information transfer
Pokročilé III-N súčiastky pre prenos informácie a energie
Program: VEGA
Project leader: Ing. Kuzmík Ján DrSc.
Annotation:Gallium Nitride (GaN) and related compounds commonly referred as III-N have significantly more flexible energy gap, higher breakdown electric field intensity, a large spontaneous polarization, high thermal and radiation resistance, but also the high mobility of electrons. Therefore there is an effort to develop III-N semiconductor devices, mainly HFETs, which have the potential to gradually replace Si, Si/SiGe, GaAs and InP devices in microwave and power applications, switches, switching amplifiers, logic circuits and mixed-signal electronics. Consequently, in this manner we aspire to develop HFETs with InN channel for ultra-fast information transfer, advanced GaN-based transistor switches for energy conversion, technology of GaN-based fast mixed-signal electronics, and GaN-based UV sensors for space applications.
Duration: 1.1.2018 - 31.12.2021
Advanced MgB2 superconductor without diffusion barrier
Pokrokový MgB2 supravodič bez difúznej bariéry
Program: VEGA
Project leader: Ing. Kováč Pavol DrSc.
Annotation:The essence of the project is to prepare and optimize the method of preparation of superconducting composite wire (filaments) by the method of magnesium infiltration or diffusion into boron. The main emphasis will be focused on the simplicity of preparation (without the diffusion barrier), the availability and suitability of the sheath materials and their electro-mechanical properties. The properties of the MgB2 superconducting core will be controlled by technological preparation, annealing conditions, and possible doping. Selection of suitable materials and technological processes allows monitoring of effects on micro-structure, mechanical properties and superconductive properties: critical current density at temperatures in the range of 4.2 - 20 K, critical temperature, connectivity or losses in alternating magnetic field. The role of the project will be also to examine the possibility of creating superconducting links.
Duration: 1.1.2020 - 31.12.2021
Fabrication, characterization, and doping of ultra-thin layers of transition metal dichalcogenides
Príprava, charakterizácia a dopovanie ultratenkých vrstiev dichalkogenidov prechodných kovov
Program: VEGA
Project leader: Mgr. Sojková Michaela PhD.
Annotation:Thanks to the unusual physical properties, 2D materials have been intensively studied for several years. An interesting group of this class of materials is transition metal dichalcogenides TMD. They have a hexagonal structure with the individual layers bonded to each other only by weak Van der Waals bonds. This causes significantly anisotropic properties and has a significant effect on their electronic structure. Some of them show physically interesting correlated states (superconductivity, charge density waves). The primary goal of this project is to prepare and study the properties of thin layers of 2 different TMD - MoS2 and PtSe2, and to study the influence of doping with Li and Na cations on the electrical and structural properties of these layers. The secondary goal is to optimize growth and doping conditions to improve the parameters of thin films, such as electrical conductivity and charge carrier mobility which will enable the preparation of functional electronic components - transistors.
Duration: 1.1.2021 - 31.12.2024
Radiation harder sensor for X-ray imaging of higher quality
Radiačne odolnejší senzor pre RTG zobrazovanie vyššej kvality
Program: SRDA
Project leader: Mgr. Zaťko Bohumír PhD
Duration: 1.7.2019 - 30.6.2023
Growth and characterization of a material from the group of transition metal dichalcogenides: titanium diselenide
Rast a charakterizácia materiálu zo skupiny dichalkogenidov prechodových kovov: diselenid titánu
Program: VEGA
Project leader: Ing. Precner Marián PhD.
Duration: 1.1.2019 - 31.12.2021
Robust spin waves for future magnonic applications
Robustné spinové vlny pre budúce magnonické aplikácie
Program: SRDA
Project leader: Dr. Mruczkiewicz Michal
Annotation:In this project we will focus on the theoretical and experimental investigation of spin wave dynamics at nanoscale. Spin wave is considered as candidate for an information carrier in ultrafast and energy efficient information processing devices. It is due the unique properties of spin waves, namely low heat dissipation, possible manipulation at nanoscale or reconfigurability. We are going to investigate specific spin wave systems, that can host robust, unidirectional and reprogrammable spin waves. Therefore, the results of this project will contribute to the field of modern magnetism, magnonics.
Duration: 1.7.2020 - 30.6.2023
Superconducting coils made of uniform MgB2 wires with tubular filaments
Supravodivé vinutia z homogénnych MgB2 drôtov s trubičkovými vláknami
Program: SRDA
Project leader: Ing. Kováč Pavol DrSc.
Annotation:The aim of this project is to develop the process of infiltration/diffusion (IMD) for long and uniform superconducting wires with tubular MgB2 filaments resulting in high engineering current densities measured in coils cooled by solid nitrogen in persistent mode. The main aim is to increase three times the engineering current density in long IMD MgB2 wires in comparison to those commercially obtained by powder-in-tube (PIT) process, especially in the range of magnetic fields 1-5T and temperatures around 20K
Duration: 1.7.2019 - 30.11.2021
Study of magnetic effects at nanoscale
Štúdium magnetických efektov na nanoúrovni
Program: VEGA
Project leader: Ing. Šoltýs Ján PhD
Duration: 1.1.2019 - 31.12.2021
Thin film structures for energy applications
Tenkovrstvové štruktúry pre využitie v energetike
Program: VEGA
Project leader: Ing. Fröhlich Karol DrSc.
Annotation:The project is aimed at preparation of thin film structures for energy applications. We will focus on preparation and study of properties of transparent conducting electrodes for organic photovoltaic cells and organic light emitting diodes as well as on encapsulation of these devices in the first part. We will concentrate also on preparation and study of properties metal-insulator-semiconductor structures suitable as photoanodes for water splitting under sun light. The next part of the project will be devoted to study of thin film electrodes for energy storage in batteries and ton preparation of structures for supercapacitors. Thin film in these devices will be prepared by atomic layer deposition and liquid injection metal organic chemical vapour deposition. Prepared structures will constitute a base for new advanced devices for energy applications.
Duration: 1.1.2018 - 31.12.2021
Tribological properties of 2D materials and related nanocomposites
Tribologické vlastnosti 2D materiálov a príbuzných nanokompozitov
Program: SRDA
Project leader: Dr. rer. nat. Hulman Martin
Duration: 1.8.2018 - 30.6.2022
Vertical GaN MOSFET for power switching applications
Vertikálny GaN MOSFET pre výkonové spínacie aplikácie
Program: SRDA
Project leader: Ing. Kuzmík Ján DrSc.
Annotation:Owing the ever growing demand for the energy volume, energy attainability represents one of the most important issues of today’s society. However, there are great reserves in the energy savings available. According to available analyses, more than 10% of all electricity is ultimately lost in the form of conversion losses. Clearly, even partial improvement in the conversion efficiency can have strong economic impact. As the most of energy is now used for the electronics, corresponding scale of the losses forms at the end-user side, where the electricity is converted into a form suitable for a particular appliance. The main effort towards the conversion efficiency improvements therefore targets the area of power AC/DC and DC/DC converters for consumer and industrial electronics. Significant improvement in the conversion efficiency can be achieved by using GaN based transistors, as they are capable to operate at much higher frequencies with almost three times lower switching losses compared to Si devices. The main goal of the project is the research and development of vertical GaN MOSFET without using p-doping, and gaining the original knowledge on electrical and physical properties of the developed devices. From the quantitative point of view, our proof-of-concept device will target RON<2 mOhm/cm2 and VBD>600 V. An original feature of the proposed concept is utilization of the semi-insulating (SI) GaN as a channel layer (instead of p-type GaN), which blocks the current flow through the transistor at zero gate voltage. To open the transistor channel, positive voltage applied to the gate will be needed to induce down bend-bending in the SI GaN, allowing electron injection from the source to the drift region (along the side walls of SI GaN). This concept therefore represents a unipolar enhancement-mode transistor, while drift region is formed of un-doped GaN with extremely low density of dislocation grown directly on GaN substrate.
Duration: 1.7.2019 - 30.6.2022
Contact engineering for advanced materials and devices
Výskum a vývoj kontaktov pre nové materiály a súčiastky
Program: VEGA
Project leader: RNDr. Gregušová Dagmar DrSc.
Annotation:Intensive research has so far been done into metallic contacts to semiconductors. However, new types of conductivity, materials and devices, and new contact formation mechanisms require new insights into the formation of such contacts. Our aim is to determine the processes and physics behind metallization schemes for normally-off InAlN-based heterostructure high electron mobility transistors with hole conductivity. InAlN with a high molar fraction of InN will be doped with Mg, and the ohmic and Schottky metallic stacks will be optimized. New transition metal dichalkogenide materials (TMDCs) are very promising for new device applications. However, metallization schemes for TMDCs are very challenging. TMDCs exhibit varying band gap widths in dependence of their thickness. Our aim is to study metallization schemes for TMDCs, their topology, and explain differences between ex-foliated and grown samples, and differences between back-gated and top-gated devices in correlation with basic TMDCs properties.
Duration: 1.1.2021 - 31.12.2024
Research of radiation resistant semiconductor detector for nuclear energies
Výskum radiačne odolných polovodičových detektorov pre jadrovú energetiku
Program: SRDA
Project leader: Mgr. Zaťko Bohumír PhD
Duration: 1.7.2019 - 31.12.2022
Radiation resistant semiconductor sensors for utilization in harsh environment
Vysokoodolné polovodičové senzory ionizujúceho žiarenia pre využitie v radiačnom prostredí
Program: VEGA
Project leader: Mgr. Zaťko Bohumír PhD
Annotation:Recently, detectors of ionizing radiation are important part of many fields of science and research. The object of proposal is research of various semiconductor detector structures based on Si, GaAs, 4H-SiC and CdTe as a detector of ionizing radiation where 4H-SiC is wide bandgap semiconductor which is radiation resistant material suitable for long term work in harsh environment. This includes optimization of prepared sensor in term of utilization and also what type of radiation will be detected. Also passivation and encapsulation is important in long term word of prepared sensors. The contribution will be also in the simulation due to optimization of size and thickness of sensor contacts and passivation. The prepared structures will be characterized by electrical (curren-voltage and capacitance-voltage measurements) and spectrometric measurements using standartly used radioisotope sources. Also radiation hardness of samples will be tested (increased temperature, ionizing environment).
Duration: 1.1.2020 - 31.12.2023
High temperature superconducting coils in motors for electric and hybrid aircrafts
Vysokoteplotná supravodivá cievka pre motory elektrických a hybridných lietadiel
Program: SRDA
Project leader: Mgr. Pardo Enric PhD.
Annotation:Full superconducting electric motors are very promising to provide the required power density to enable commercial hybrid and electric airplanes. These can reduce emissions by 75 % in CO2 and 90 % in NOx, following the ACARE Flightpath 2050 targets of the European Union. Superconducting motors can also be applied to cleaner sea or sweet water transport. In spite of the extensive research in the area, the electro-magnetic and electro- thermal properties of superconducting coils in the motor magnetic environment remain largely unknown, partially because of the lack of measurements of the relevant temperatures (between 20-40 K) and modeling methods for full superconducting motors. The aim of this project is to gain this understanding and develop numerical modeling methods to enable the design of future superconducting motors. These methods will be compared to experiments in the relevant temperature range for motor applications.
Duration: 1.7.2020 - 30.6.2023
High-performance curved X-ray optics prepared by advanced nanomachining technology
Vysokovýkonná zakrivená röntgenová optika pripravená pokročilou technológiou nanoobrábania
Program: VEGA
Project leader: Ing. Zápražný Zdenko PhD.
Annotation:The project is focused on the research and development of new types of X-ray optics with highly accurate curved active surfaces. The surfaces will be prepared by an innovative nanomachining technology. We will investigate the application of nanomachining technology to a special case of X-ray optics with curved surfaces, which is a parabolic refractive lens operating in the transmission geometry. The second special case we will focus on will be thin crystal monochromators with different thicknesses in a range of 20-2000 micrometers. Such elements can be used for example as beam splitters in modern X-ray free-electron lasers (XFEL), bent crystals in Johansson monochromators for spectroscopic applications, or they can also be used in particle accelerators for beam steering. The developed elements of curved X-ray optics will be tested in real X-ray metrology and X-ray imaging experiments using laboratory or synchrotron X-ray sources and highly sensitive directly converting X-ray detectors Pilatus and Medipix.
Duration: 1.1.2021 - 31.12.2023
GaN-based heterostructure as a promising UV sensor for space application
Vývoj UV senzora na báze GaN pre vesmírne aplikácie
Program: VEGA
Project leader: Ing. Stoklas Roman PhD.
Duration: 1.1.2019 - 31.12.2022

The total number of projects: 27