The list of national projects SAS
Institute of Electrical Engineering SAS
Long-range proximity effect in superconductor / ferromagnet heterostructures
Dlhodosahový jav blízkosti v supravodič/feromagnet heteroštruktúrach
Electronic and optoelectronic devices based on ultra-wide bandgap Ga2O3 semiconductor
Elektronické a optoelektronické súčiastky na báze ultra-širokopásmového Ga2O3 polovodiča
| Duration: |
1.1.2021 - 31.12.2024 |
| Program: |
VEGA |
| Project leader: |
Ing. Ťapajna Milan PhD. |
| Annotation: | Recently, great research effort has been devoted to ultra-wide bandgap semiconductors for the preparation of
high-performance electronic devices operating in the electric fields up to tens of kV and UV photodetectors. This
project aims the research of the growth of epitaxial layers and electronic as well as optoelectronic devices based
on Ga2O3. Based on preliminary results, we will investigate the growth of rhombohedral Ga2O3 with the highest
bandgap energy. Epitaxial layers will be prepared by metal-organic chemical vapor deposition using liquid phase
precursor injection. The layers will be used for preparation and research of electronic devices with a focus on
Schottky diodes and switching MOSFET transistors. We will study the transport and thermal properties, parasitic
effects and breakdown mechanisms of the developed electronic devices as well as electro-optical properties of
p-n heterojunctions. We will also target exploratory research for improvements in thermal management of the
power transistors. |
Evolution of colour centres in diamond and their properties towards quantum detection
Formovanie farebných centier v diamante a ich vlastností smerom ku kvantovej detekcii
Photonic Lab-on-a-Chip: investigation and development of plasmonic sensor platform for immediate detection of composites in solutions
Fotonické labortórium na čipe: výskum a vývoj platformy plazmonického senzora pre okamžitú detekciu zložiek v roztokoch
TMD/diamond heterostructures: Fabrication, characterization and applications
Heteroštruktúry TMD/diamant: Príprava, charakterizácia a aplikácia
Critical aspects of the growth for a new generation of III-N devices
Kritické aspekty rastu polovodičových štruktúr pre novú generáciu III-N súčiastok
| Duration: |
1.1.2022 - 31.12.2025 |
| Program: |
VEGA |
| Project leader: |
Ing. Kuzmík Ján DrSc. |
| Annotation: | Gallium Nitride (GaN) compounds are investigated for a new generation of high-frequency transistors, power
electronics and post CMOS logic circuits. Flexibility in this area is given by a miscibility of In and Al with GaN,
providing a wide spectra of semiconductors with a possibility of setting an energy band-gap from 0.65 eV to 6.2
eV, with countless combinations of heterostructures. Basis of our project is given by study and mastering of the
growth of unique material concepts using a metal-organic chemical-vapour deposition (MOCVD) technique. We
aim to investigate: i/ transistors with N-polar InN channel, ii/ MOS contacts on N-polar heterostructures, iii/
transistors with a hole conduction, as well as iv/ vertical structures on GaN substrate. Part of the project will be
represented by characterisation activities, like investigation of the electron transport properties in N-polar InN, in MOS structures, study on the 2-dimensional hole gas as well as transient effect in C-doped vertical transistors. |
Modern electronic devices based on ultrawide bandgap semiconducting Ga2O3 for future high-voltage applications
Moderné elektronické súčiastky na báze ultraširokopásmového polovodiča Ga2O3 pre budúce vysokonapäťové aplikácie
| Duration: |
1.7.2021 - 30.6.2025 |
| Program: |
SRDA |
| Project leader: |
Ing. Gucmann Filip PhD. |
| Annotation: | Wide bandgap (WBG) semiconductor devices represent one of the key technologies in development of high power and high frequency systems for electric power conversion and telecommunications owing to their fundamental benefit of higher breakdown electric fields, in some cases increased electron mobility, and possibility to form heterostructures and 2D electron gas. GaN and SiC, two typical WBG examples also benefit from moderate values of thermal conductivity allowing for more efficient sinking of generated waste heat, lower channel temperatures, and enhanced device reliability. New emerging semiconductor materials with even higher bandgap energies (Eg>3.4eV) referred to as ultrawide bandgap materials allow for further improvements in high power and high voltage handling solid-state electronic devices. Currently, semiconducting gallium oxide (Ga2O3) is under extensive study and expected to provide base material for rectifying Schottky -gate diodes and field-effect transistors for applications operating in kV range thanks to its good scalability, relatively simple synthesis, availability of native melt-grown substrates, and wide range of achievable n-type doping levels. The main aim of the proposed project constitutes material research and development of technology for epitaxial growth of epitaxial α -,β-, and ε-Ga2O3 layers and for processing of basic unipolar and bipolar electronic devices based on prepared Ga2O3 layers for future high voltage/power applications. Ga2O3 layers will be grown using liquid injection metalorganic chemical vapour deposition on sapphire, and higher thermal conductivity SiC substrates. We also aim to prepare Schottky diodes, FETs, and all-oxide Ga2O3 PN diodes using naturally p-type oxides (e.g. NiO, In2O3, CuO2). Comprehensive structural, electrical, optical, and thermal study of prepared epitaxial layers and devices will be conducted and numerous original, high-impact results are expected to be obtained. |
Advanced GaAs-based nanomembrane heterostructures for highperformance RF devices
Moderné nanomembránové heteroštruktúry na báze GaAs pre vysoko produktívne vysokofrekvenčné prvky
| Duration: |
1.7.2022 - 30.6.2025 |
| Program: |
SRDA |
| Project leader: |
RNDr. Gregušová Dagmar DrSc. |
| Annotation: | The main aim of the proposed project is to expand the basic knowledge and to master the fabrication technology of
the advanced nanomembrane AlGaAs/GaAs heterojunction devices for high-performance RF applications.
Insufficient removal of the waste heat in electronic devices due to the Joule losses leading to overheating and early
device failure often requires foreign, high thermal conductivity substrates to be employed. As opposed to the
mainstream research of the GaN-based electronic devices prepared directly on sapphire or SiC, proposed GaAsbased devices will be fabricated upon self-supporting heterostructure nanomembranes transferred onto various
substrates. It is very timely, original, and desirable approach to extend the utilization of the GaAs-based devices
material potential, as demonstrated by our preliminary results. |
Modification of properties of superconducting, ferromagnetic, oxide films and structures for advanced electronics
Modifikácia vlastností supravodivých, feromagnetických oxidových vrstiev a štruktúr pre modernú elektroniku
| Duration: |
1.1.2022 - 31.12.2025 |
| Program: |
VEGA |
| Project leader: |
RNDr. Španková Marianna PhD |
| Annotation: | We prepare and study oxide – ferromagnetic and dielectric perovskite thin films and micro- and nano structures as well as selected current superconducting films. YBa2Cu3Ox (YBCO) and La0.67Sr0.33MnO3 (LSMO)
microstrips will be exposed different types of organic molecules to study their influence on the superconducting and ferromagnetic film properties. Following the results of the previous VEGA project, we will continue to study the superconductor S/ferromagnet F and S/F/S structures focusing on a creation of magnetic inhomogeneities with the aim to increase the triplet component of superconductivity and resolve the phenomenom of S/F thin films interaction (proximity effect). As part of the project, we will investigate the possibility of superconducting behavior of a two-dimensional MoS2 system deposited by pulsed laser deposition. |
Growth and Radiation Mechanisms in Diamond Hybrid Detectorsd Radiation Mechanisms in Diamond Hybrid Detectors
Modifikácia vlastností supravodivých, feromagnetických oxidových vrstiev a štruktúr pre modernú elektroniku
Nano-optical probes and sensors integrated on optical fiber
Nanooptické sondy a senzory integrované na optickom vlákne
Nanostructured thin-film materials characterized by weak binding interactions for electronic and sensoric applications
Nanoštrukturované tenkovrstvové materiály vyznačujúce sa slabými väzbovými interakciami pre elektronické a senzorické aplikácie
| Duration: |
1.7.2022 - 30.6.2026 |
| Program: |
SRDA |
| Project leader: |
RNDr. Gregušová Dagmar DrSc. |
| Annotation: | The proposed project is focused on the basic research of the preparation processes and properties of
semiconducting sulfides of transition metals such as Mo, W and Ni and selected combinations with their oxides in
the form of mixed sulfides and oxides, as well as the possibilities of their doping with noble metals (Pt, Au) for use
in gas sensors as well as in supercapacitors. We also anticipate full utilization of semiconductor
microelectronic and micromechanical techniques and micro / nanotechnologies, which can significantly contribute
to qualitatively improved detection properties, low operating power consumption of gas sensors as well as
increased energy efficiency and supercapacitor lifetime.
|
Low-loss superconducting CORC-like cable from REBCO conductors
Nízkostratový supravodivý kábel typu CORC z REBCO vodičov
| Duration: |
1.1.2021 - 31.12.2023 |
| Program: |
VEGA |
| Project leader: |
Mgr. Seiler Eugen PhD |
| Annotation: | Aim of the project is to elaborate the design of a superconducting CORC-like cable with considerably reduced AC
losses. Project is focused on identification of the key parameters of the cable design, on the construction of model
cables and their experimental characterisation. The research will follow two basic directions: optimisation of
geometrical layout of the individual REBCO tapes in the cable and investigation of possible utilisation of low
conductivity materials for the central core of the cable. Geometrical optimisation of the cable will be based on
results of numerical simulations employing the Finite Element Method and the Minimum Electro-Magnetic Entropy
Production method. In the experimental part, sets of short model cables will be manufactured for tests of different
geometrical configurations and different materials for the central core. Investigated will be the total AC losses,
basic transport parameters and degradation of superconducting tapes due to mechanical loading in the cabling
process. |
Optimization of round high-temperature supercnoducting cable for pulse magnetic field
Optimalizácia okrúhleho kábla z vysokoteplotného supravodiča pre pulzné magnetické polia
| Duration: |
1.7.2021 - 30.6.2025 |
| Program: |
SRDA |
| Project leader: |
doc. Ing. Gömöry Fedor DrSc. |
| Annotation: | The project is focused on an optimization of a cable made of high temperature superconducting tapes wound on a
core in form of a tube with the possibility of cooling the cable by the coolant flowing through the former. The
purpose of the optimization is a significant decrease of AC losses, which can be achieved through three
modifications of the cable. The first one is to reduce the width of the 4 mm superconducting tape down to 1 mm
with steps smaller than 0.2 mm. The tuning of the tape width should allow to prepare the cables with optimal
packing of the cable layers and with greater flexibility. The second modification is an additional narrowing of the
superconductor width by striation scribing the superconducting layer along the tape with already optimized width.
Both processes require a development of a suitable method for the cutting and scribing process of the
superconducting tapes with minimal impact on their mechanical, structural and electrical properties. The third
modification is the innovation of the central former, which should fulfill requirement of significantly reduced electrical
conductivity. Modified superconducting tapes and cables prepared from them will be characterized in terms of
mechanical and electromagnetic properties. Most of the experiments will be supported by computer modeling. |
p-GaN electronics for energy savings and beyond-CMOS circuits
p-GaN elektronika pre úsporu energie a post-CMOS obvody
| Duration: |
1.7.2022 - 30.6.2025 |
| Program: |
SRDA |
| Project leader: |
Ing. Kuzmík Ján DrSc. |
| Annotation: | III-N semiconductors are probably the most versatile and promising semiconductor family, consisted of artificial
compounds made of GaN, AlN and InN. In the project proposal we describe new technological concepts with
sufficient freedom to solve main problems of the III-N post-beyond CMOS age: in transistors co-existence of the
parasitic n-channel along with the p-channel, as well as low hole gas density and mobility. Similarly, we aim to
demonstrate scalable threshold voltage in the enhancement-mode p-doped power transistors, which are needed by
the industry for efficient, energy-saving convertors. In these aspects, our laboratories already showed very
promising results proving the competence to reach described targets. If successfully implemented, results of our
proposed project would represent a significant step forward not only from the world-wide point of view but is also in
full agreement with the RIS3 SK (perspective areas of specialization of the Slovak economy), particularly in the
field of semiconductors for electric cars of automotive industry, as well as in information and communication
sciences.
|
Perspective ionizing radiation detectors for the uncovered neutron energy window
Perspektívne detektory ionizujúceho žiarenia pre nepokryté energetické okno neutrónov
| Duration: |
1.7.2023 - 30.6.2027 |
| Program: |
SRDA |
| Project leader: |
Mgr. Zaťko Bohumír PhD |
| Annotation: | The subject of the presented project is the optimization and preparation of semiconductor detection structures
based on 4H-SiC and polycrystalline diamond suitable for neutron detection. As part of the project, single detectors
will be prepared and investigated, especially for neutron energies from 100 keV to several MeVs. There are
currently few sensitive detectors in this area of neutron energy. The advantages of SiC and polycrystalline diamond are the high radiation and temperature resistance of structures. The high spectrometric capability of SiC detectors is also important, especially when detecting neutrons with energies below 1 MeV. Polycrystalline diamond is m ore affordable than SiC, and our first preliminary results show its promising detection properties, especially when detecting ionizing particles. Another advantage of both types of semiconductors is the low sensitivity to gamma radiation, which is almost always present in the event that neutrons are formed during a nuclear reaction. This gamma ray enhances the background and impairs the sensitivity of the detectors currently in use. Pixel sensors for the Timepix/Medipix reading chip will also be developed and investigated. Prototypes of the radiation camera will be tested and calibrated using a monoenergetic neutron source. |
Perspective semiconductor detector for nuclear physics
Perspektívne polovodičové detektory pre využitie v jadrovej fyzike
Preparation and properties of superconducting and magnetic oxide films for modern electronic applications
Príprava a vlastnosti supravodivých a magnetických oxidových vrstiev pre moderné elektronické aplikácie
Fabrication, characterization, and doping of ultra-thin layers of transition metal dichalcogenides
Príprava, charakterizácia a dopovanie ultratenkých vrstiev dichalkogenidov prechodných kovov
| Duration: |
1.1.2021 - 31.12.2024 |
| Program: |
VEGA |
| Project leader: |
Mgr. Sojková Michaela PhD. |
| Annotation: | Thanks to the unusual physical properties, 2D materials have been intensively studied for several years. An
interesting group of this class of materials is transition metal dichalcogenides TMD. They have a hexagonal
structure with the individual layers bonded to each other only by weak Van der Waals bonds. This causes
significantly anisotropic properties and has a significant effect on their electronic structure. Some of them show
physically interesting correlated states (superconductivity, charge density waves). The primary goal of this project
is to prepare and study the properties of thin layers of 2 different TMD - MoS2 and PtSe2, and to study the
influence of doping with Li and Na cations on the electrical and structural properties of these layers. The
secondary goal is to optimize growth and doping conditions to improve the parameters of thin films, such as
electrical conductivity and charge carrier mobility which will enable the preparation of functional electronic
components - transistors. |
Growth and optical characterization of 2D materials: MoTe2, WTe2, PtTe2
Rast a optická charakterizácia 2D materiálov: MoTe2, WTe2, PtTe2
| Duration: |
1.1.2023 - 31.12.2025 |
| Program: |
VEGA |
| Project leader: |
RNDr. Pribusová Slušná Lenka PhD. |
| Annotation: | Research of thin-film materials noticed a significant increase, especially since the discovery of graphene, when a wide range of 2D materials began to study. A significant group of 2D materials is transition metal dichalcogenides
(TMDs), including MoTe2, WTe2, and PtTe2. These materials have unique optoelectronic properties that vary
due to the thickness of the layer and the crystal structure. Electrical properties vary depending on structures, from
semiconducting to metallic. The preparation of films by tellurization of molybdenum, tungsten, and platinum is
more difficult than sulfurization or selenization due to the weaker redox properties of tellurium.
The challenge in thin films is the controlled preparation of the required crystal structure of homogenous large-area
layers. This project aims to contribute to the solution of preparing these materials, characterize their structure and orientation of the films concerning the substrate, and determine the optical parameters and electrical properties. |
Superconducting joints of MgB2 wires for windings in persistent mode
Supravodivé spoje pre MgB2 vinutia v perzistentnom móde
| Duration: |
1.1.2022 - 31.12.2025 |
| Program: |
VEGA |
| Project leader: |
Ing. Kováč Pavol DrSc. |
| Annotation: | The idea of this project is to make and optimize superconducting joints between the composite MgB2 wires
manufactured by powder-in-tube method „PIT“ and by the infiltration or diffusion of magnesium into boron
process „IMD“ and use it for winding working in „persistent mode“. It will be done dominantly for superconducting
joints of winding made by „wind and react“ technique, but joints for winding with already reacted MgB2 wires
made by „react and wind“ process will be developed as well. The properties of manufactured superconducting
MgB2 joints of different geometry and architecture will be subjected to mechanical and thermal treatments, which would reach the joint current around 50% of critical current measured for the reference MgB2 wire at external field 5 T. |
Scholarships for excellent researchers threatened by the war conflict in Ukraine
Štipendiá pre excelentných výskumníkov ohrozených vojnovým konfliktom na Ukrajine
Study of magnetic vortex dynamics for device applications
Štúdium dynamiky magnetického víru pre využitie v súčiastkach
| Duration: |
1.1.2022 - 31.12.2024 |
| Program: |
VEGA |
| Project leader: |
Ing. Šoltýs Ján PhD |
| Annotation: | In this project, we will focus on the theoretical and experimental investigation of magnetic vortices. The idea is to
use them as a candidate for an information carrier in ultrafast and energy-efficient devices. The key idea of such
memory is to use the two vortex core polarities as a magnetic bit that can be easily read and written via the
dynamical reversal. We will search for the optimal shape of a magnetic 3D pattern with polarity easily controlled
by a small in-plane magnetic field. In the second part of the project, we will design and prepare a system of
ordered magnetic nanoelements in the vortex state set by an in-plane magnetic field. Such ordered nanoelements
can be considered as a single unit cell of the magnonic crystal. They can be also periodically arranged into a
finite 2D array of interacting magnetic objects to observe the unidirectional spin waves. Therefore, our
investigation will be an important step towards the first experimental demonstration of topological magnons. |
Thermal stabilization of high-temperature superconducting tapes for fault current limiters
Tepelná stabilizácia vysokoteplotných supravodivých pások pre použitie v obmedzovačoch skratových prúdov
| Duration: |
1.1.2021 - 31.12.2024 |
| Program: |
VEGA |
| Project leader: |
doc. Ing. Gömöry Fedor DrSc. |
| Annotation: | Additional thermal stabilization is necessary for commercially available high-temperature superconducting tapes,
in order to use the tapes in devices for fault current limiting in high-voltage grids. The proposed project is aimed at
fabrication of thermally stabilizing composite coating (epoxy resin with ceramic filler), which will act as a sink and
absorber of the heat produced in a limiting event. Various materials for thermal stabilization will be tested, with
regard to their thermal, physical, and mechanical properties, and their resistance against thermal shocks.
Possibilities for improvement of mechanical properties will be investigated by additional reinforcement of the
thermal stabilization. The effectivity of the thermal stabilization will be determined for superconducting tapes from
various producers, by experimental limiting of fault current. Experiments will be complemented with numerical
modelling. |
Topologically nontrivial magnetic and superconducting nanostructures
Topologicky netriviálne magnetické a supravodivé nanoštruktúry
Transport of magnetic skyrmions in antidot lattices: Effect of temperature and combination of transport mechanisms
Transport magnetických skyrmiónov v antidot mriežkach: Efekt teploty a kombinácie rôznych transportných mechanizmov
Transistors based on 2D Metal Chalcogenides Grown via Thermally Assisted Conversion
Tranzistory na báze 2D kovových chalkogenidov pripravených teplom podporovanou konverziou
| Duration: |
1.7.2022 - 30.6.2026 |
| Program: |
SRDA |
| Project leader: |
Ing. Ťapajna Milan PhD. |
| Annotation: | 2D materials can form one-atom-thick sheets with extraordinary properties. One of the most promising classes of
2D materials is the transition metal dichalcogenides (TMDs). The transition from an indirect to a direct bandgap,
when the bulk materials is thinned down to a monolayer, results in unique electrical and optical properties of 2D
TMDs. Post-transition metal chalcogenides (PTMCs) represents another interesting group of 2D materials. These
materials have wide band gap and, depending on the structure of the material, show anisotropic electrical and
optical properties. The aim of this project is the fabrication of field-effect transistors with metal-oxide-semiconductor
gate (MOSFETs) based on selected TMDs and PTMCs compounds and detail analysis of their transport properties.
We will focus on large-area few-layer PtSe2 and GaS/GaSe films grown by thermal assisted conversion, i.e.
sulfurization and selenization. Based on the existing experiences, structural, chemical and electrical properties of
horizontally-aligned PtSe2 films prepared by selenization will be optimized, targeting mobilities similar to those
prepared by mechanical exfoliation. Then, MOSFET technology using both, top-gate as well as bottom-gate
approach will be developed and optimized. Atomic layer deposition and metal-oxide chemical vapor deposition
(MOCVD) will be employed for gate oxide growth. GaS/GaSe few-layer films will be prepared by chalcogenization |
Ultra-thin conformal surface coatings of complex-morphology structures for improving battery performance using atomic layer deposition
Ultratenké homogénne povrchové vrstvy na štruktúrach komplexnej morfológie pre vylepšenie výkonu batérii využitím depozície po atómových vrstvách
| Duration: |
1.1.2022 - 31.12.2025 |
| Program: |
VEGA |
| Project leader: |
Ing. Hudec Boris PhD. |
| Annotation: | Project is focused on the development and optimization of method of 3D deposition of conformal ultra-thin
coatings using ALD (atomic layer deposition) on structures of complex morphology, such as micro-porous layers
and powders. The method will subsequently be applied in preparation of new generation Li-based batteries, by
passivation and modification of micro-porous surfaces of cathode layers. Effect of ultra-thin ALD coatings
conformality at the nano-scale will be systematically evaluated by correlation of electron microscopy analyses
with electrochemical measurements of prepared batteries. Next step will be the modification of surfaces of
discrete metal and ceramic micro-particles and powders with the aim of their subsequent application in fabrication of novel ceramic and metal materials and also new materials for experimental battery electrodes. |
Thermal transport properties of perspective future semiconductor materials and interfaces
Vlastnosti tepelného transportu v budúcich perspektívnych polovodičových materiáloch a rozhraniach
Contact engineering for advanced materials and devices
Výskum a vývoj kontaktov pre nové materiály a súčiastky
| Duration: |
1.1.2021 - 31.12.2024 |
| Program: |
VEGA |
| Project leader: |
RNDr. Gregušová Dagmar DrSc. |
| Annotation: | Intensive research has so far been done into metallic contacts to semiconductors. However, new types of
conductivity, materials and devices, and new contact formation mechanisms require new insights into the
formation of such contacts. Our aim is to determine the processes and physics behind metallization schemes for
normally-off InAlN-based heterostructure high electron mobility transistors with hole conductivity. InAlN with a
high molar fraction of InN will be doped with Mg, and the ohmic and Schottky metallic stacks will be optimized.
New transition metal dichalkogenide materials (TMDCs) are very promising for new device applications. However,
metallization schemes for TMDCs are very challenging. TMDCs exhibit varying band gap widths in dependence
of their thickness. Our aim is to study metallization schemes for TMDCs, their topology, and explain differences between ex-foliated and grown samples, and differences between back-gated and top-gated devices in correlation with basic TMDCs properties. |
Research and development of advanced for defiction of gases and biomolecules
Výskum a vývoj pokročilého QCM-FET duálneho senzora reaktivovaného na báze diamantových vrstiev pre detekciu plynov a biomolekúl
Radiation resistant semiconductor sensors for utilization in harsh environment
Vysokoodolné polovodičové senzory ionizujúceho žiarenia pre využitie v radiačnom prostredí
| Duration: |
1.1.2020 - 31.12.2023 |
| Program: |
VEGA |
| Project leader: |
Mgr. Zaťko Bohumír PhD |
| Annotation: | Recently, detectors of ionizing radiation are important part of many fields of science and research. The object of proposal is research of various semiconductor detector structures based on Si, GaAs, 4H-SiC and CdTe as a detector of ionizing radiation where 4H-SiC is wide bandgap semiconductor which is radiation resistant material suitable for long term work in harsh environment. This includes optimization of prepared sensor in term of utilization and also what type of radiation will be detected. Also passivation and encapsulation is important in long term word of prepared sensors. The contribution will be also in the simulation due to optimization of size and thickness of sensor contacts and passivation. The prepared structures will be characterized by electrical (curren-voltage and capacitance-voltage measurements) and spectrometric measurements using standartly used radioisotope sources. Also radiation hardness of samples will be tested (increased temperature, ionizing environment). |
High-performance curved X-ray optics prepared by advanced nanomachining technology
Vysokovýkonná zakrivená röntgenová optika pripravená pokročilou technológiou nanoobrábania
| Duration: |
1.1.2021 - 31.12.2023 |
| Program: |
VEGA |
| Project leader: |
Ing. Zápražný Zdenko PhD. |
| Annotation: | The project is focused on the research and development of new types of X-ray optics with highly accurate curved
active surfaces. The surfaces will be prepared by an innovative nanomachining technology. We will investigate
the application of nanomachining technology to a special case of X-ray optics with curved surfaces, which is a
parabolic refractive lens operating in the transmission geometry. The second special case we will focus on will be
thin crystal monochromators with different thicknesses in a range of 20-2000 micrometers. Such elements can be
used for example as beam splitters in modern X-ray free-electron lasers (XFEL), bent crystals in Johansson
monochromators for spectroscopic applications, or they can also be used in particle accelerators for beam
steering. The developed elements of curved X-ray optics will be tested in real X-ray metrology and X-ray imaging
experiments using laboratory or synchrotron X-ray sources and highly sensitive directly converting X-ray
detectors Pilatus and Medipix. |
Development of silicon carbide and aluminum nitride interlayers for pn heterostructure based on gallium oxide and boron-doped nanodiamonds
Vývoj medzivrstiev karbidu kremíka a nitridu hliníka pre pn heteroštruktúry oxidu gália a bórom dopovaných nanodiamantov
Energy Harvesting Device Based on Micropillar Structures
Zberač energie na báze mikrostĺpikovitých štruktúr
Improvement of crystal quality of β-Ga2O3 grown on SiC using LI-MOCVD method
Zlepšenie kryštalickej kvality β-Ga2O3 rasteného na SiC substrátoch pomocou LI-MOCVD metódy
The total number of projects: 36
