Institute of Inorganic Chemistry
Topic
Preparation of silicon carbide ceramics with high-temperature properties
PhD. program
inorganic technology and materials
Year of admission
2026
Name of the supervisor
Ing. Ondrej Hanzel, PhD.
Contact:
Receiving school
Faculty of Chemical and Food Technology STU
Annotation
The aim of the proposed research is to develop fully dense silicon carbide (SiC) materials with high-temperature properties. Dissertation will be focused on preparation of silicon carbide ceramics by novel approach, without traditional sintering additives and at sintering temperature lower than 2000°C. The novelty of this method lies in the modification of SiC powders by freeze granulation with organic additives, followed by heat treatment of granulated powders and subsequent sintering by field assisted sintering techniques (FAST). Moreover, due to the increasing interests and demands in propulsion-system components, aerospace applications, parts of rocket engines, etc. it is essential not only to develop this new class of materials but also to thoroughly characterize their high-temperature properties. Therefore, thermal conductivity at high temperatures, high-temperature strength in temperature range from 1500°C to 2000°C and dynamic oxidation in oxyacetylene torch at temperature higher than 1700°C on such prepared materials will be characterized.