Institute of Physics
Topic
The theory of gated semiconductor spin qubit devices based on silicon and germanium
PhD. program
Physics of Condensed Matter and Acoustics
Year of admission
2025
Name of the supervisor
doc. Mgr. Denis Kochan, PhD.
Contact:
Receiving school
Faculty of Mathematics, Physics and Informatics
Annotation
A PhD in the theory of quantum computing with solid-state devices with emphasis on simulations and numerics [1]. The goal is to develop models applicable to current quantum dot spin-qubit devices [2]. After the initial orientation, we will choose one of the platforms based on electrons in silicon, such as Si/SiGe heterostructures and Si-MOS finFETs, or holes in germanium, such as Ge/SiGe heterostructures or Ge/Si core-shell nanowires. The candidate will get acquainted with ab initio methods (DFT and tight-binding), microscopic simulation methods (COMSOL or similar), and the k-dot-p theory [3]. Combining these methods, we aim to obtain models that are capable of explaining the experimental data and enable one to suggest improvements in device design and operation. The candidate will have the opportunity to collaborate with the leaders in spin-qubit theory (D. Loss, Basel, CH) and experiments (S. Tarucha, RIKEN, JP).
Literature:
[1] W. H. Press, et al., Numerical Recipes, 3rd edition (2007).
[2] G. Burkard, et al., Semiconductor spin qubits. Rev. Mod. Phys. 95, 025003 (2023).
[3] Dresselhaus, et al., Group theory: application to the physics of condensed matter, Springer-Verlag Berlin (2008).
Literature:
[1] W. H. Press, et al., Numerical Recipes, 3rd edition (2007).
[2] G. Burkard, et al., Semiconductor spin qubits. Rev. Mod. Phys. 95, 025003 (2023).
[3] Dresselhaus, et al., Group theory: application to the physics of condensed matter, Springer-Verlag Berlin (2008).