The list of national projects SAS
Institute of Electrical Engineering SAS
Cost-effective Ga2O3-diamond heterojunction photodetectors for solar-blind UV imaging
Cenovo dostupné fotodetektory s heteroprechodom Ga2O3-diamant pre UV zobrazovanie necitlivé na slnečné svetlo
Two-dimensional materials and their heterostructures as a platform for multifunctional devices
Dvojrozmerné materiály a ich heteroštructúry ako platforma pre multifunkčné zadiadenia
Colour centres in diamond – correlation between atomic structure and opto-electronic properties
Farebné centrá v diamante – korelácia medzi atómovou štruktúrou a optoelektronickými vlastnosťami
| Duration: |
1.9.2024 - 31.12.2027 |
| Program: |
SRDA |
| Project leader: |
Ing. Izsák Tibor PhD. |
| Annotation: | The subject of the project is in the field of quantum technologies. We will prepare and characterize optically -active
defects in diamonds and correlate the atomic structures with optical properties to be used for quantum applicati ons.
For a wide range of dopant concentrations, we will identify the dopant distributions and study the evolution of
dopants’ configuration in-situ, during thermal annealing, using atomic-resolution microscopy and spectroscopy
techniques. We will further study the effect of annealing on the opto-electronic properties by measuring
photoluminescence, photocurrent and electroluminescence for the same set of samples. Graphene transparent
electrodes on a diamond surface will be fabricated for phototransport measurements. Diamond-based hybrid p-i-n
diodes will be prepared for electroluminescence measurements. We will focus on finding a correlation between the
atomic structure and the opto-electronic properties of differently doped diamonds. This will contribute to the
understanding of the fundamental relationship needed to efficiently design optically -active elements for diamond
quantum devices.
|
2D TMD-based heterostructures for electronic applications
Heteroštruktúry na báze 2D dichalkogenidov prechodných kovov pre elektronické aplikácie
Control of magnetic order in artificial magnonic crystal
Kontrola magnetického usporiadania topologického magnónového kryštálu
| Duration: |
1.1.2024 - 31.12.2026 |
| Program: |
VEGA |
| Project leader: |
Mgr. Feilhauer Juraj PhD. |
| Annotation: | As one of its most unique features, the bulk of the 2D topological insulator is insulating while its edges host
conducting symmetry-protected states robust against imperfections. These edge states are unidirectional (i.e.
immune against back-scattering), which makes them promising candidates for the low-dissipation information
carriers in future information-processing devices. Recently, we have proposed a theoretical model of a
ferromagnetic artificial crystal hosting topological spin waves (magnons), where the unidirectional edge states
exist in a wide range of frequencies. The geometry of our magnonic crystal (MC) is simple and should be
experimentally realizable. However, one of the main challenges is to prepare an MC in a correct magnetic order,
where the magnetizations of the elements forming a unit cell circulate with the same chirality in all cells of the
crystal. The main goal of this project is to find a reliable protocol based on thermal annealing providing the
desired magnetic state of our MC. |
Novel heterostructures for (sub)THz electronics
Nové heteroštruktúry pre (sub)THz elektroniku
| Duration: |
1.9.2025 - 31.8.2029 |
| Program: |
SRDA |
| Project leader: |
Ing. Kuzmík Ján DrSc. |
| Annotation: | The speed and complexity of Si CMOS digital logic circuits was kept increasing by shrinking the Si MOSFET
transistors, but this cannot be continued in the future. Further progress, essential for higher capacity and energy
efficient computers, may be realized by replacing the n-type MOSFET transistor channel with a III-V semiconductor
providing a significant increase of the electron velocity. Similarly, there is an increasing interest in using THz
frequencies in ultra-high-speed information and communication systems, such as wireless communication, or in
infra-red imaging systems and spectroscopy detection. InN has been recognized as a far-reaching candidate for
ultra-high-speed electronics since almost two decades ago. Indeed, very recently these expectations were
supported by us extracting the electron drift velocity of 1 ×10e8 cm/s in 775-nm thick molecular-beam epitaxygrown InN, the highest ever reported value in any semiconductor material. Unfortunately, because of the large
lattice misfit to typically used GaN templates, thinner InN layers suffer from large density of defects and low
electron mobility and consequently, no InN-based microwave high-electron mobility transistor has been
demonstrated yet. The proposed project aims on extending our present vast knowledge in the field of the physics,
growth and implementation of InN-channel heterostructures and to promote novel epitaxial techniques which are
Základný výskum / Basic research
APVV-24-0166
Akronym: NovelTHz 11.09.2025 11:28 Strana/Page: 2
VV 2024
necessary for ultra-high-speed electronics of (sub)THz frequency range being viable. We aim particularly on
enhancement of the crystallographic and material quality of proposed heterostructures by implementing novel
MOCVD techniques such as: i/ Flow modulation epitaxy, ii/ Growth on variously inclined sapphire, iii/
Heterostructures capping and charge manipulation by polarization, and aim to achieve iv/ Demonstration and
qualification of novel III-N heterostructures for (sub)THz transistor electronics. |
New hybrid semiconductor structures for ionizing radiation detection
Nové hybridné polovodičové štruktúry pre detekciu ionizujúceho žiarenia
Optimised growth and the transport and optical properties of thin layers of selected topological semimetals
Optimalizovaný rast a transportné a optické vlastnosti tenkých vrstiev vybraných topologických polokovov
| Duration: |
1.7.2024 - 30.6.2027 |
| Program: |
SRDA |
| Project leader: |
Dr. rer. nat. Hulman Martin |
| Annotation: | One of the fundamental results of quantum mechanics in the 1920s was the derivation of relativistic equations for
massive fermions (Dirac), massless fermions (Weyl) and fermions that are themselves antiparticles (Majorana).
Since those times, particle physics has been searching for particles representing Weyl and Majorana's fermions.
However, their search has not yet been successful.
In the last twenty years, it has been shown that the band structure of some materials has such unique
characteristics that the charge carriers in them can behave according to the dynamics satisfying the Dirac or Weyl
relativistic equations. Such materials include compounds from the group of transition metals dichalcogenides,
which we will focus on in our project.
We will work with very thin layers of selected materials from this group, such as PtSe2, MoTe2 and WTe2. The first
step in the implementation of the project will be the preparation of such layers by chalcogenisation of thin films of
transition metals. Their transport and optical properties will then be thoroughly investigated. Temperaturedependent transport measurements can show us transitions between different structures of the same material. We expect that a metal-insulator transition can be observed when the thickness of such thin films is varied. Some of
these materials can go into a superconducting state at very low temperatures. We will also try to induce this state in
close proximity, i.e. when the thin layer is in contact with another superconductor.
Optical measurements will be correlated with transport measurements. We derive essential frequency-dependent
characteristics, such as optical conductivity, from the latter. We will look for characteristics theoretically predicted
for Dirac and Weyl fermions in the optical conductivity. |
Perspective ionizing radiation detectors for the uncovered neutron energy window
Perspektívne detektory ionizujúceho žiarenia pre nepokryté energetické okno neutrónov
| Duration: |
1.7.2023 - 30.6.2027 |
| Program: |
SRDA |
| Project leader: |
Mgr. Zaťko Bohumír PhD |
| Annotation: | The subject of the presented project is the optimization and preparation of semiconductor detection structures
based on 4H-SiC and polycrystalline diamond suitable for neutron detection. As part of the project, single detectors
will be prepared and investigated, especially for neutron energies from 100 keV to several MeVs. There are
currently few sensitive detectors in this area of neutron energy. The advantages of SiC and polycrystalline diamond are the high radiation and temperature resistance of structures. The high spectrometric capability of SiC detectors is also important, especially when detecting neutrons with energies below 1 MeV. Polycrystalline diamond is m ore affordable than SiC, and our first preliminary results show its promising detection properties, especially when detecting ionizing particles. Another advantage of both types of semiconductors is the low sensitivity to gamma radiation, which is almost always present in the event that neutrons are formed during a nuclear reaction. This gamma ray enhances the background and impairs the sensitivity of the detectors currently in use. Pixel sensors for the Timepix/Medipix reading chip will also be developed and investigated. Prototypes of the radiation camera will be tested and calibrated using a monoenergetic neutron source. |
Advanced graphene-based polymer hybrids for environment-adaptive lubrication
Pokročilé polymérne hybridy na báze grafénu pre environmentálne adaptívne mazanie
| Duration: |
1.9.2026 - 31.8.2030 |
| Program: |
SRDA |
| Project leader: |
Mgr. Kozak Andrii PhD. |
| Annotation: | Friction, adhesion, and wear are common phenomena that appear in all moving systems. It was estimated that more than 20% of all the generated energy is wasted to overcome the friction lost, and up to 38% can be saved by using new
materials, efficient lubrication or harvesting the energy emitted by the moving systems. In extreme environments, where the liquid lubricants lose their efficiency, the most effective are solid lubricants. The surfaces covered by polymer brushes were recognized as excellent solid lubricants at the nanoscale. The arrangement of brushes in dense regime was observed to provide ultra-low coefficient of friction. Such performance originates from suppressed entanglements between polymers. This effect is more pronounced in presence of fluorine atoms, which contribute to repulsion between brushes. The combination of structural and chemical factors was recognized to lead to ultra-low friction when grafted on Silicon wafer, but still not observed at macroscale. This project aims the investigation of tribological properties of hybrids formed by solid core and polymer shell brushes. Compared to common polymer coatings, the proposed hybrid lubricants are easily transferable and applicable and robust for production. Graphene has good tribological properties in ambient air and vacuum but difficult to modify due to absence of functional groups. Therefore, the oxidized form (GO) which offers more controllable mechanical, electrical, and tribological properties will be used to covalently attach the polymer brushes. The synergetic effect of particle core and brush structure will be investigated. Grafted bulk, mono-, and few layered GO by brushes with various content of fluorine atoms and length will be compared. We assume that combination of suitable
particle core and polymer modification will lead to novel materials with lubrication properties providing the ultra-low coefficient of friction and similar performance under vacuum and ambient conditions. |
Preparation and properties of superconducting, magnetic and dielectric oxide films and structures for modern electronic applications
Príprava a vlastnosti supravodivých, magnetických a dielektrických oxidových vrstiev a štruktúr pre moderné elektronické aplikácie
PULSed laser deposition of large ARea 2D materials heterostructures for high performance electronics
Pulzná laserová depozícia veľkoplošných heteroštruktúr 2D materiálov pre vysoko výkonnú elektroniku
Slovak Technical Ecosphere Platform
Slovenská technická ekosférická platforma
| Duration: |
1.4.2025 - 30.6.2027 |
| Program: |
|
| Project leader: |
Ing. Hudec Boris PhD. |
| Annotation: | The main objective of the STEPHANIK Project is to stimulate swifter grow of Slovak space-oriented industry
and research sector, accomplished via close collaboration and coordination between all relevant entities (mainly
industry and academia) and with strong involvement of excellent international partners bringing beyond state of
art methods and approaches to Slovak space ecosystem. The main research mission of the Project is to achieve
the proposal of the design of a modular satellite that will be fully compatible with future European responsive
space system able to place small satellites in various types of orbits within a short notice in order to address
specific operational needs and capability gaps stemming from shortage, failures and damages of existing space
assets. |
High kinetic inductance superconductors for quantum circuits applications
Supravodiče s vysokou kinetickou indukčnosťou pre aplikácie v kvantových obvodoch
Thermal stability of superconducting coils and filamentized REBCO tapes
Tepelná stabilita supravodivých cievok a filamentovaných REBCO pások
| Duration: |
1.1.2024 - 31.12.2026 |
| Program: |
VEGA |
| Project leader: |
Mgr. Seiler Eugen PhD |
| Annotation: | The project investigates electro-thermal stability of filamentized superconducting REBCO tapes and
superconducting coils at transporting the electric current. The goal is to develop theoretical models and numerical
methods allowing to determine the maximum transport current that can flow through a superconducting coil or
through a filamentized tape without the risk of a rapid local heating. Characterization of tapes and coils will be
based on the standard measurement methods as well as on specially designed experiments, which will allow to
incorporate the real parameters of available superconducting tapes into the models. In order to experimentally
verify the theoretical models of thermal stability of superconducting coils, specific model coils will be built,
equipped with multiple voltage and temperature sensors for detailed monitoring of the electro-thermal stability.
The outcomes of the theoretical models will subsequently be applied at manufacturing bigger coils, relevant for
realistic electric devices. |
Thermal management in Ga2O3 based electronic and optoelectronic devices
Tepelný manažment elektronických a optoelektronických súčiastok na báze Ga2O3
| Duration: |
1.1.2025 - 31.12.2028 |
| Program: |
VEGA |
| Project leader: |
Ing. Ťapajna Milan PhD. |
| Annotation: | Ga2O3 represents a promising semiconductor material for future high-power electronic devices and UV and X-ray
detectors. A major drawback of Ga2O3 is its low thermal conductivity, which may represent a challenge in thermal
management of power devices operating in the ON state. The aim of this project is to develop advanced
strategies for thermal management in Ga2O3 based electronic and optoelectronic devices. First, we will focus on
the growth development of Ga2O3 layers on high-thermally conductive (HTC) substrates such as SiC and
diamond using three different CVD methods. We will investigate and optimize transport and thermal properties of
the Ga2O3 layer and Ga2O3/HTC substrate thermal boundary conductance. The second goal is to develop
technology for CVD growth of synthetic udoped diamond heat-spreading layer on the Ga2O3 based electronic
devices. Finally, we will develop heteroepitaxial pn photodiodes based on all-polycrystalline p-type
diamond/n-type Ga2O3 heterostructure for solar-blind photodetectors. |
Ternary chalcogenide perovskites for photovoltaics
Ternárne chalkogenidové perovskity pre fotovoltaiku
| Duration: |
1.7.2024 - 30.6.2028 |
| Program: |
SRDA |
| Project leader: |
Ing. Chromik Štefan DrSc. |
| Annotation: | The goal of the proposed project is the synthesis of ternary chalcogenides with perovskite structure and systematic
characterization of the relationship between the composition, structure, optical properties, thermal and chemical stability with the potential in the application in photovoltaics, or other optoelectronics. The result will be a set of prepared pure ternary chalcogenides in the form of crystalline powders and thin films with known, as well as newly prepared compositions and a comprehensive characterization of their optical and electronic properties, as well as thermal and chemical stability. Ternary chalcogenides will be prepared also by wet approach at lower temperature up to 350 °C in the form of nanocrystals which will be characterized in terms of their structure and morphology.
Proof-of-concept solar cell will be prepared, which has not yet been reported in the literature. The optimalization will be done based on performance measurements.
|
Topological Materials for Next-Generation Devices
Topologické materiály pre prvky novej generácie
Multiple-tape high temperature superconducting coils for superconducting motors and magnets
Viacpáskové vysokoteplotné supravodivé cievky pre supravodivé motory a magnety
Effect of the application of organic molecules on the properties of perovskite thin-film structures
Vplyv aplikácie organických molekúl na vlastnosti perovskitovských tenkovrstvových štruktúr
| Duration: |
1.7.2024 - 31.12.2027 |
| Program: |
SRDA |
| Project leader: |
RNDr. Španková Marianna PhD |
| Annotation: | In recent years, sufficient experimental evidence has accumulated that adsorbed organic chiral molecules affect
the superconducting properties of YBa2Cu3O7-x (YBCO) films. In some cases, an increase in their critical temperature Tc can be observed. On the other hand, it has been shown that in the case of ferromagnetic layers (e.g., cobalt), the application of chiral molecules can lead to a change in magnetization without the use of an electric current. An important role here is played by spin. Spin introduces an additional degree of freedom into the system, allowing devices, for example, to reduce electrical consumption or increase their computational capacity. Spintronic devices have become an attraction in electronics; however, problems associated with controlling spin remain a significant challenge. A unique way of manipulating spin is through the effect known as chirality-induced spin selectivity (CISS), which results from the specific structure of organic chiral molecules. The project focuses on the preparation and characterization of simple heterostructures and their interaction with chiral polymers deposited on the film surface. Specifically, it deals with the influence of chiral lactic acid on perovskite thin films, where the selected perovskites are high-temperature superconductor YBCO and ferromagnet La1-xSrxMnO3 (LSMO).
|
Gallium oxide power transistors for high-voltage operation
Výkonové tranzistory na báze oxidu galitého pre vysokonapäťové aplikácie
| Duration: |
1.9.2025 - 31.8.2029 |
| Program: |
SRDA |
| Project leader: |
Ing. Gucmann Filip PhD. |
| Annotation: | In this project we will design, fabricate and test new Gallium oxide (GaO)-based power switching metal-oxidesemiconductor field-effect transistor (MOSFET) devices for high-voltage operation. We will develop high-quality
epitaxial GaO films on sapphire, SiC, and AlN/Si substrates using newly-purchased commercial Aixtron CCS
MOCVD system capable of growth on 2-4 inch wafers. One of the main focuses of the project will be on the
improvement of heteroepitaxial GaO films, targeting the engineering of in-plane rotational domains (IRDs), typically
present when GaO is grown on standard foreign substrates with hexagonal surface symmetry. We will
systematically optimize the growth parameters and introduce engineered substrates to break the surface
symmetry, allow for epitaxial lateral overgrowth, and promote the growth of specific GaO crystal orientations. As a
result, we expect lowered density of dislocations in GaO films and improved mobility of charge carriers, effectively
increasing output current in the fabricated MOSFETs. By means of by TCAD-based electrothermal simulations we
will focus on MOSFET design to achieve breakdown voltage >1 kV by introduction of various field plate structures,
while maintaining the low on-state resistance. Device layout will also be optimized do achieve enhanced thermal
Základný výskum / Basic research
APVV-24-0325
Akronym: GO4HV 04.02.2025 15:35 Strana/Page: 2
VV 2024
performance for improved device reliability and lifetime. Using the optimized device structure, MOSFETs will be
fabricated via conventional photolightography, dry etching, PVD, ALD, and PE-CVD deposition techniques.
Electrical properties including device reliability and breakdown will be analysed and used to verify the TCAD
simulations and further improve design of the GaO MOSFETs. |
Research and development of materials and structures based on nanostructured transition metal chalcogenides for supercapacitor applications
Výskum a vývoj materiálov a štruktúr na báze nanoštruktúrnych chalkogenidov prechodných kovov pre superkapacitorové aplikácie
| Duration: |
1.1.2024 - 31.12.2027 |
| Program: |
VEGA |
| Project leader: |
Mgr. Sojková Michaela PhD. |
| Annotation: | The project is focused on the research of nanostructured transition metal chalcogenides (TMC) and their use in
applications for energy storage. The task is to gain new knowledge in the preparation of NiSx, NiSex, MoS2,
MoSe2, etc. and their heterostructures and composites with selected oxides, hydroxides and/or carbon materials
and in the development of nanostructured hierarchical electrodes to improve conductivity, morphology, and
electrochemical properties for supercapacitor (SC) applications. Within the project, the expertise in the field of
growth, material, and electrochemical characterization of the workplaces of FEI STU and IEE SAV will be
connected. The knowledge gained will be used in the preparation and analysis of model electrodes and
asymmetric hybrid SC with the aim to increase capacity, energy density and analysis of degradation mechanisms.
Materials will also be tested for hydrogen generation. The task is also to gain knowledge in the field of
development of models for control of SC devices. |
Development of Ga2O3 epitaxy on different substrates and Schottky barrier diodes with enhanced reliability
Vývoj technológií epitaxie Ga2O3 na rôzne substráty a Schottkyho diód so zlepšenou spoľahlivosťou
Reduction of AC losses in a cable model made of striated hightemperature superconductors
Znižovanie striedavých strát v modeli kábla zo zväzku filamentovaných vysokoteplotných supravodičov
| Duration: |
1.9.2025 - 31.8.2029 |
| Program: |
SRDA |
| Project leader: |
Mgr. Seiler Eugen PhD |
| Annotation: | High-temperature superconductors based on REBCO (Rare Earth Barium Copper Oxide) are used in magnet
windings for devices with high magnetic fields (>10 T) such as particle accelerators or nuclear fusion reactors.
During the operation of these devices, alternating current (AC) losses occur and REBCO tapes are affected by
cyclic electromagnetic forces, arising during the time change of the magnetic field, which can cause failure of the
device. The aim of this project will be the development of a striated REBCO tapes and a TORT (Tapes on Round
Tube) type cable with low AC losses and high mechanical toughness (for example fatigue strength). We plan to
achieve the reduction of AC losses by striating the REBCO tape and altering the material of the cable former.
However, after such process, it is necessary to protect the striated REBCO layers with an additional (multi)layer for
the purpose of chemical and thermal stabilization. The former of the cable will be 3D printed from a composite
Základný výskum / Basic research
APVV-24-0061
Akronym: ZnižStrStr 23.09.2025 10:50 Strana/Page: 2
VV 2024
material based on PETG CF (polyethylene terephthalate glycol reinforced with carbon fiber), with much lower
electrical conductivity than previously used formers. By altering the material of the former in the TORT cable, we
can reduce the total magnetization losses by decreasing the eddy currents, which were contributed by the copper
former. According to numerical calculations (ANSYS, COMSOL), we apply the corresponding mechanical load to
REBCO tapes (untreated/striated) and cables from these REBCO tapes. Afterwards, we determine the mechanical
toughness of the cables, which will be optimized by studying the REBCO tape damage using SEM, FIB, XPS and
ERDA methods. A successful production of a short TORT cable with a stabilization (multi)layer wound on a
composite former will be a confirmation of the suitability of this cable concept. By combining the above materials,
we can create an innovative superconducting cable with significantly reduced AC losses and high mechanical
toughness.
|
The total number of projects: 24
