The list of national projects SAS
Institute of Electrical Engineering SAS
Graphene encapsulated two-dimensional magnetic materials as a platform for spintronics devices
Grafénom zapuzdrené dvojrozmerné magnetické materiály ako platforma pre spintronické zariadenia
| Duration: |
1.1.2025 - 31.8.2026 |
| Program: |
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| Project leader: |
Ing. Precner Marián PhD. |
| Annotation: | The field of materials science is currently experiencing rapid growth. This project focuses on the investigation and development of two-dimensional van der Waals heterostructures, which represent physical systems playing a key role in the advancement of future technologies aimed at digital and green energy transformation, in line with the general interests of our society. Our research targets new systems—two-dimensional magnetic metal iodides encapsulated in graphene—prepared using a one-step synthetic method (SinGO). The project brings together research teams with complementary expertise and infrastructure to maximize synergy, enabling the realization of fundamental theoretical and experimental research, technological improvement of sample preparation, and demonstration of the concept showing that charge-to-spin conversion can be achieved through proximity-induced effects in the fabricated prototype devices. |
Cost-effective Ga2O3-diamond heterojunction photodetectors for solar-blind UV imaging
Cenovo dostupné fotodetektory s heteroprechodom Ga2O3-diamant pre UV zobrazovanie necitlivé na slnečné svetlo
Development of Electronic System Interface of Neuromorphic Arrays for In-Sensor Computing
Development of Electronic System Interface of Neuromorphic Arrays for In-Sensor Computing
| Duration: |
1.1.2025 - 31.12.2025 |
| Program: |
DoktoGrant |
| Project leader: |
Dehghan Mohammad |
Colour centres in diamond – correlation between atomic structure and opto-electronic properties
Farebné centrá v diamante – korelácia medzi atómovou štruktúrou a optoelektronickými vlastnosťami
| Duration: |
1.9.2024 - 31.12.2027 |
| Program: |
SRDA |
| Project leader: |
Ing. Izsák Tibor PhD. |
| Annotation: | The subject of the project is in the field of quantum technologies. We will prepare and characterize optically -active
defects in diamonds and correlate the atomic structures with optical properties to be used for quantum applicati ons.
For a wide range of dopant concentrations, we will identify the dopant distributions and study the evolution of
dopants’ configuration in-situ, during thermal annealing, using atomic-resolution microscopy and spectroscopy
techniques. We will further study the effect of annealing on the opto-electronic properties by measuring
photoluminescence, photocurrent and electroluminescence for the same set of samples. Graphene transparent
electrodes on a diamond surface will be fabricated for phototransport measurements. Diamond-based hybrid p-i-n
diodes will be prepared for electroluminescence measurements. We will focus on finding a correlation between the
atomic structure and the opto-electronic properties of differently doped diamonds. This will contribute to the
understanding of the fundamental relationship needed to efficiently design optically -active elements for diamond
quantum devices.
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2D TMD-based heterostructures for electronic applications
Heteroštruktúry na báze 2D dichalkogenidov prechodných kovov pre elektronické aplikácie
InN: Breaking the Limits of Solid-State Electronics
InN: prielom v elektronike tuhej fázy
| Duration: |
1.11.2023 - 30.6.2026 |
| Program: |
|
| Project leader: |
Ing. Kuzmík Ján DrSc. |
| Annotation: | The InBreak project follows Horizon 2020 project NANOMAT. NANOMAT aims to inaugurate and establish a new domain of "Flexible (Conformal) Power RF Nanoelectronics" through an ambitious innovative heterogeneous technology platform including organic-based electronics and heat sinks, semiconductor monolithic wide band gap microwave integrated circuits (MMICs), radio frequency microelectromechanical actuators (RF MEMS) and acoustic sensors. In the InBreak project, InN as a unique semiconductor material will be grown as strained channel on a tailored N-polarity InAlN buffer layer. Conventional GaN buffer will be replaced by InAlN with an In molar fraction of 0.7-0.9.
We expect that this approach, combined with a thin GaN interlayer between the InAlN barrier and the InN channel, will lead to excellent high-density 2-dimensional electron gas (2DEG) confinement in the epi-structures. Completion of the project will enable HEMTs higher working frequencies and the potential of approaching 6G technology in the (sub)THz band.
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Critical aspects of the growth for a new generation of III-N devices
Kritické aspekty rastu polovodičových štruktúr pre novú generáciu III-N súčiastok
| Duration: |
1.1.2022 - 31.12.2025 |
| Program: |
VEGA |
| Project leader: |
Ing. Kuzmík Ján DrSc. |
| Annotation: | Gallium Nitride (GaN) compounds are investigated for a new generation of high-frequency transistors, power
electronics and post CMOS logic circuits. Flexibility in this area is given by a miscibility of In and Al with GaN,
providing a wide spectra of semiconductors with a possibility of setting an energy band-gap from 0.65 eV to 6.2
eV, with countless combinations of heterostructures. Basis of our project is given by study and mastering of the
growth of unique material concepts using a metal-organic chemical-vapour deposition (MOCVD) technique. We
aim to investigate: i/ transistors with N-polar InN channel, ii/ MOS contacts on N-polar heterostructures, iii/
transistors with a hole conduction, as well as iv/ vertical structures on GaN substrate. Part of the project will be
represented by characterisation activities, like investigation of the electron transport properties in N-polar InN, in MOS structures, study on the 2-dimensional hole gas as well as transient effect in C-doped vertical transistors. |
Enhanced safe materials for Li-ion batteries
Materiály so zvýšenou bezpečnosťou pre Li-iónové batérie
| Duration: |
1.1.2025 - 31.8.2026 |
| Program: |
|
| Project leader: |
Ing. Hudec Boris PhD. |
| Annotation: | The development, production, and use of batteries are vital for the EU’s transition to a climate-neutral economy, as batteries play a key role in achieving zero-emission transportation, energy, and industry. Third-generation lithium-ion batteries are currently the most widespread type used in electric vehicles. The goal of the project is to develop materials that enhance the operational safety of lithium-ion batteries in a passive way. Each component of a Li-ion battery can contribute to improving its operational safety. Within the project, we aim to develop an anode and a cathode with enhanced performance and flame-retardant properties. Furthermore, a new type of separator will be designed to prevent mechanical and thermal damage during operation. Finally, the electrochemical properties and performance of a standard battery and a battery composed of safety-enhanced materials will be evaluated under conditions close to thermal runaway. |
Memristive sensorics for post-digital electronics
Memristívna senzorika pre post-digitálnu elektroniku
| Duration: |
1.9.2023 - 30.6.2026 |
| Program: |
|
| Project leader: |
Dehghan Mohammad |
| Annotation: | In-sensor computing is a new paradigm for 21st century electronics inspired by nature. In present-day electronics, all the noisy, unstructured data output by sensors needs to be digitised first for further processing. This may soon become a showstopper given the exponential rise in the amount of sensing devices and data they produce, both in consumer electronics like self-driving vehicles and in the Industrie 4.0 framework. On the other hand, in bio-inspired systems, the sensing and processing are not separate; instead, the sensing nodes directly form synaptic connections in the hardware neural network, where the external stimuli being sensed directly alter the synaptic weight matrix, allowing simple algorithms encoded in the neural network to process the signals into reasonable output in real-time. Under this thesis, the student will learn and understand how to build such a prototypical smart sensing system from scratch, i.e. by depositing, patterning and stacking ultra-thin (~nm) oxide and metal films into the simple sensor and memristor devices and arranging these building blocks into functional sensing neural network matrices on a chip. The expertise acquired will cover nano-fabrication methods with a focus on atomic layer deposition (ALD), material analyses and electrical characterisation techniques, and an understanding of the hardware neural networks based on emerging devices. The thesis will be a part of a wider project, and the student will become a part of our research team. We are looking for creative and dedicated team players, prior experience in related areas is a plus. |
Modification of properties of superconducting, ferromagnetic, oxide films and structures for advanced electronics
Modifikácia vlastností supravodivých, feromagnetických oxidových vrstiev a štruktúr pre modernú elektroniku
| Duration: |
1.1.2022 - 31.12.2025 |
| Program: |
VEGA |
| Project leader: |
RNDr. Španková Marianna PhD |
| Annotation: | We prepare and study oxide – ferromagnetic and dielectric perovskite thin films and micro- and nano structures as well as selected current superconducting films. YBa2Cu3Ox (YBCO) and La0.67Sr0.33MnO3 (LSMO)
microstrips will be exposed different types of organic molecules to study their influence on the superconducting and ferromagnetic film properties. Following the results of the previous VEGA project, we will continue to study the superconductor S/ferromagnet F and S/F/S structures focusing on a creation of magnetic inhomogeneities with the aim to increase the triplet component of superconductivity and resolve the phenomenom of S/F thin films interaction (proximity effect). As part of the project, we will investigate the possibility of superconducting behavior of a two-dimensional MoS2 system deposited by pulsed laser deposition. |
Nanostructured thin-film materials characterized by weak binding interactions for electronic and sensoric applications
Nanoštrukturované tenkovrstvové materiály vyznačujúce sa slabými väzbovými interakciami pre elektronické a senzorické aplikácie
| Duration: |
1.7.2022 - 30.6.2026 |
| Program: |
SRDA |
| Project leader: |
RNDr. Gregušová Dagmar DrSc. |
| Annotation: | The proposed project is focused on the basic research of the preparation processes and properties of
semiconducting sulfides of transition metals such as Mo, W and Ni and selected combinations with their oxides in
the form of mixed sulfides and oxides, as well as the possibilities of their doping with noble metals (Pt, Au) for use
in gas sensors as well as in supercapacitors. We also anticipate full utilization of semiconductor
microelectronic and micromechanical techniques and micro / nanotechnologies, which can significantly contribute
to qualitatively improved detection properties, low operating power consumption of gas sensors as well as
increased energy efficiency and supercapacitor lifetime.
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Raman and FTIR low-temperature study of PtSe2, MoTe2 and WTe2 thin films
Nízkoteplotné merania pomocou Ramanovej a Infračervenej spektroskopie: MoTe2, WTe2, PtSe2
Novel heterostructures for (sub)THz electronics
Nové heteroštruktúry pre (sub)THz elektroniku
| Duration: |
1.9.2025 - 31.8.2029 |
| Program: |
SRDA |
| Project leader: |
Ing. Kuzmík Ján DrSc. |
| Annotation: | The speed and complexity of Si CMOS digital logic circuits was kept increasing by shrinking the Si MOSFET
transistors, but this cannot be continued in the future. Further progress, essential for higher capacity and energy
efficient computers, may be realized by replacing the n-type MOSFET transistor channel with a III-V semiconductor
providing a significant increase of the electron velocity. Similarly, there is an increasing interest in using THz
frequencies in ultra-high-speed information and communication systems, such as wireless communication, or in
infra-red imaging systems and spectroscopy detection. InN has been recognized as a far-reaching candidate for
ultra-high-speed electronics since almost two decades ago. Indeed, very recently these expectations were
supported by us extracting the electron drift velocity of 1 ×10e8 cm/s in 775-nm thick molecular-beam epitaxygrown InN, the highest ever reported value in any semiconductor material. Unfortunately, because of the large
lattice misfit to typically used GaN templates, thinner InN layers suffer from large density of defects and low
electron mobility and consequently, no InN-based microwave high-electron mobility transistor has been
demonstrated yet. The proposed project aims on extending our present vast knowledge in the field of the physics,
growth and implementation of InN-channel heterostructures and to promote novel epitaxial techniques which are
Základný výskum / Basic research
APVV-24-0166
Akronym: NovelTHz 11.09.2025 11:28 Strana/Page: 2
VV 2024
necessary for ultra-high-speed electronics of (sub)THz frequency range being viable. We aim particularly on
enhancement of the crystallographic and material quality of proposed heterostructures by implementing novel
MOCVD techniques such as: i/ Flow modulation epitaxy, ii/ Growth on variously inclined sapphire, iii/
Heterostructures capping and charge manipulation by polarization, and aim to achieve iv/ Demonstration and
qualification of novel III-N heterostructures for (sub)THz transistor electronics. |
New hybrid semiconductor structures for ionizing radiation detection
Nové hybridné polovodičové štruktúry pre detekciu ionizujúceho žiarenia
New semiconductor materials for pixel sensors with applications in digital radiography
Nové polovodičové materiály pre pixelové senzory s využitím pre digitálnu rádiografiu
| Duration: |
1.1.2024 - 30.6.2026 |
| Program: |
|
| Project leader: |
Mgr. Zaťko Bohumír PhD |
| Annotation: | Digital imaging using X-rays or other types of ionizing radiation (neutrons, electrons, ions …) is increasingly used in various fields of human activity. Digital systems operating in the so-called single photon counting or event counting mode are gaining more and more interest for research and progressive development. The most promising in this field appear to be the Timepix readout chips family developed at CERN. The main objective of the project is to prepare and optimize semiconductor pixel sensors for the TPX4 readout chip. We will use our previous experience in preparing SiC and GaAs based sensors, which have not been used with this chip so far. The advantage of the new TPX4 chip over the previous version is the larger detection area (3.5×), higher maximum speed (8×), better energy resolution and time resolution. The use of these sensors or radiation cameras would be mainly in industry, in defectoscopy, analysis of various materials, in medicine, in space research, etc. |
Optimised growth and the transport and optical properties of thin layers of selected topological semimetals
Optimalizovaný rast a transportné a optické vlastnosti tenkých vrstiev vybraných topologických polokovov
| Duration: |
1.7.2024 - 30.6.2027 |
| Program: |
SRDA |
| Project leader: |
Dr. rer. nat. Hulman Martin |
| Annotation: | One of the fundamental results of quantum mechanics in the 1920s was the derivation of relativistic equations for
massive fermions (Dirac), massless fermions (Weyl) and fermions that are themselves antiparticles (Majorana).
Since those times, particle physics has been searching for particles representing Weyl and Majorana's fermions.
However, their search has not yet been successful.
In the last twenty years, it has been shown that the band structure of some materials has such unique
characteristics that the charge carriers in them can behave according to the dynamics satisfying the Dirac or Weyl
relativistic equations. Such materials include compounds from the group of transition metals dichalcogenides,
which we will focus on in our project.
We will work with very thin layers of selected materials from this group, such as PtSe2, MoTe2 and WTe2. The first
step in the implementation of the project will be the preparation of such layers by chalcogenisation of thin films of
transition metals. Their transport and optical properties will then be thoroughly investigated. Temperaturedependent transport measurements can show us transitions between different structures of the same material. We expect that a metal-insulator transition can be observed when the thickness of such thin films is varied. Some of
these materials can go into a superconducting state at very low temperatures. We will also try to induce this state in
close proximity, i.e. when the thin layer is in contact with another superconductor.
Optical measurements will be correlated with transport measurements. We derive essential frequency-dependent
characteristics, such as optical conductivity, from the latter. We will look for characteristics theoretically predicted
for Dirac and Weyl fermions in the optical conductivity. |
Perspective ionizing radiation detectors for the uncovered neutron energy window
Perspektívne detektory ionizujúceho žiarenia pre nepokryté energetické okno neutrónov
| Duration: |
1.7.2023 - 30.6.2027 |
| Program: |
SRDA |
| Project leader: |
Mgr. Zaťko Bohumír PhD |
| Annotation: | The subject of the presented project is the optimization and preparation of semiconductor detection structures
based on 4H-SiC and polycrystalline diamond suitable for neutron detection. As part of the project, single detectors
will be prepared and investigated, especially for neutron energies from 100 keV to several MeVs. There are
currently few sensitive detectors in this area of neutron energy. The advantages of SiC and polycrystalline diamond are the high radiation and temperature resistance of structures. The high spectrometric capability of SiC detectors is also important, especially when detecting neutrons with energies below 1 MeV. Polycrystalline diamond is m ore affordable than SiC, and our first preliminary results show its promising detection properties, especially when detecting ionizing particles. Another advantage of both types of semiconductors is the low sensitivity to gamma radiation, which is almost always present in the event that neutrons are formed during a nuclear reaction. This gamma ray enhances the background and impairs the sensitivity of the detectors currently in use. Pixel sensors for the Timepix/Medipix reading chip will also be developed and investigated. Prototypes of the radiation camera will be tested and calibrated using a monoenergetic neutron source. |
Perspective ionizing radiation detectors for high-energy particles
Perspektívne detektory ionizujúceho žiarenia pre vysoko-energetické
| Duration: |
1.7.2024 - 30.6.2026 |
| Program: |
|
| Project leader: |
Mgr. Zaťko Bohumír PhD |
| Annotation: | The aim of the project is to procure a research infrastructure that will be used during the implementation of the project APVV-22-0382 and for conducting further independent research and development carried out by the organization.
he knowledge gained will be used to develop new ultra-thin, low-friction coatings for various metal substrates based on 2D materials, suitable for use in vacuum environments.
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Advanced 2D based hybrid supercapacitor devices
Pokročilé hybridné superkondenzátorové prvky na báze 2D materiálov
| Duration: |
1.3.2024 - 30.6.2026 |
| Program: |
|
| Project leader: |
Mgr. Sojková Michaela PhD. |
| Annotation: | The project is focused on research and development of advanced 2D-TMD, carbon-based materials and electrode architectures for supercapacitor applications. The aim is to increase the energy density, lifetime, and power performance of supercapacitors as sustainable energy storage alternatives to batteries for key digital electronic and e-mobility applications. Within the project, carbon based materials (2D g-C3N4, biochar), 2D-TMD pseudocapacitive materials (e.g. MoS2), battery type materials (e.g. NiS2, Ni(OH)2) and their composites, binder-free nanostructures/heterostructures will be investigated as perspectives negative and positive electrodes for advanced hybrid supercapacitor devices. Supercapacitors with improved performance will improve sustainability and user value of electronics systems and will trigger new applications and new business opportunities in key digital technologies and mobility in Slovak and European areas. |
Lubrication challenge for ultra-thin advanced 2D-TMDC in extreme conditions
Pokročilé nízkotrecie povlaky na báze ultratenkých 2D-TMDC pre extrémne podmienky
| Duration: |
1.7.2024 - 30.6.2026 |
| Program: |
|
| Project leader: |
Mgr. Kozak Andrii PhD. |
| Annotation: | The friction, stiction, adhesion, and wear are significantly influenced not only by the chemical and physical properties of the objects in relative motion but also by their shape, dimensions of the interacted area, and environment. Tightening the moving objects to the nanoscale make surface forces dominate the tribological behaviour, and the appearance of additional energy dissipation mechanisms can be observed, which can be critical for the lifetime and reliability of the devices. In turn, the environment renders multi-varied effects on the sliding interface, promoting the structural superlubricity or opposite extremally high friction caused by atomic interactions.
The aim of this project is fabrication of low-friction wear-protected surfaces coating system applicable to advanced applications at the nano- and macroscale. Ultrathin coating of new 2D TMDs (PtSe2, MoSe2) will be formed with the aim to investigate their structure evolution during sliding in ambient air, vacuum environment as well as at elevated temperatures. The friction and wear processes on the surface of 2D materials and their interfaces will be systematically analysed by means of nanoscale and macroscale friction analysis. The gained knowledge will be then used to develop new ultrathin materials as a low-friction coating for different type of metal surfaces.
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Growth and optical characterization of 2D materials: MoTe2, WTe2, PtTe2
Rast a optická charakterizácia 2D materiálov: MoTe2, WTe2, PtTe2
| Duration: |
1.1.2023 - 31.12.2025 |
| Program: |
VEGA |
| Project leader: |
RNDr. Pribusová Slušná Lenka PhD. |
| Annotation: | Research of thin-film materials noticed a significant increase, especially since the discovery of graphene, when a wide range of 2D materials began to study. A significant group of 2D materials is transition metal dichalcogenides
(TMDs), including MoTe2, WTe2, and PtTe2. These materials have unique optoelectronic properties that vary
due to the thickness of the layer and the crystal structure. Electrical properties vary depending on structures, from
semiconducting to metallic. The preparation of films by tellurization of molybdenum, tungsten, and platinum is
more difficult than sulfurization or selenization due to the weaker redox properties of tellurium.
The challenge in thin films is the controlled preparation of the required crystal structure of homogenous large-area
layers. This project aims to contribute to the solution of preparing these materials, characterize their structure and orientation of the films concerning the substrate, and determine the optical parameters and electrical properties. |
Smart gas and temperature sensors with neural-network-based low-level in-sensor data processing capability
Smart senzory plynu a teploty s nízko-úrovňovým in-sensor spracovaním dát na báze neurónovej siete
| Duration: |
1.3.2024 - 30.6.2026 |
| Program: |
|
| Project leader: |
Ing. Hudec Boris PhD. |
| Annotation: | A large number of sensing elements communicating with each other or with central control units is an integral part of the Internet of Things. The associated transmission and processing of an extreme amount of produced data is problematic. One of the solutions is processing of sensory data in close proximity to the sensor (near-sensor computing) or directly in the sensor (in-sensor computing), which radically reduces the requirements for their subsequent transmission and processing. In this project, we focus on the development of resistive gas and temperature sensors implemented into synaptic matrix of a hardware neural network, enabling low-level processing of measured sensory data directly in this network using a hardware algorithm. In the project, we will develop a methodology to calculate this algorithm and to encode it into the sensor matrix. This methodology will be one of the outputs of the project with the potential for wider application in hardware neural networks. |
Superconducting energy cables
Supravodivé energetické káble
| Duration: |
1.4.2024 - 31.3.2026 |
| Program: |
|
| Project leader: |
doc. Ing. Gömöry Fedor DrSc. |
| Annotation: | The SUPENKA project follows up the European SCARLET project, the aim of which is to develop a superconducting cable for direct current at medium voltage level of 25-50 kV, which results in the removal of the converter platform (around 10,000 tons of material). Such a solution can be advantageously used, for example, in transmission from a wind turbine farm, where direct current can be directly obtained in the turbine structure at the medium voltage level (25 to 100 kV).
The proposed SUPENKA project aims to develop in more detail some aspects of the problem solved in the SCARLET project. In the scientific field, there are two main goals: • C1: Development of a methodology for including the inhomogeneity of superconducting properties in the analysis of the stability of current transmission by a superconducting cable • C2: Verification of the possibilities of cooling superconducting cables with non-traditional cooling media. The basic verification of the methodology on short samples has already taken place, therefore the starting level of the SUPENKA project is in the range of TRL 3-4, and the intention is to reach the level of TRL 5.
The SUPENKA project will contribute to the fulfillment of the ambitious climate goals of the EC work program "Sustainable, secure and competitive energy supply" aimed at transforming the energy system and shifting energy supply towards climate neutrality within two areas of influence: • Leading position of European industry in key and new technologies for benefit of people • Affordable and clean energy
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Superconducting components for hydrogen-electric aircraft
Supravodivé komponenty pre vodíkovo-elektrické lietadlá
| Duration: |
1.3.2024 - 31.8.2026 |
| Program: |
|
| Project leader: |
Mgr. Pardo Enric PhD. |
| Annotation: | Air transport is a growing source of green-house gas emissions (CO2, NOx, and water steam at high altitude). In addition, fossil fuel prices will grow. Then, the future of commercial aviation comes through emission-less aircraft. Hydrogen-electric aircraft are very promising, where electricity comes from either fuel cells or burned in turbine generators. Electric power trains enable distributed propulsion that highly improves aircraft aerodynamics, which can save up to 70 % of energy. Since liquid hydrogen boils at 20 K (-253o C), it allows to use superconducting electric propulsion motors and power-transfer cables, which are much lighter than conventional ones. This project is intended to develop superconducting components of the power train: electric motors, power cables, and superconducting materials that they are composed. The results of this project will also be useful for other decarbonization areas like fusion energy, wind turbines, and efficient power-transmission lines. |
Superconducting joints of MgB2 wires for windings in persistent mode
Supravodivé spoje pre MgB2 vinutia v perzistentnom móde
| Duration: |
1.1.2022 - 31.12.2025 |
| Program: |
VEGA |
| Project leader: |
Ing. Kováč Pavol DrSc. |
| Annotation: | The idea of this project is to make and optimize superconducting joints between the composite MgB2 wires
manufactured by powder-in-tube method „PIT“ and by the infiltration or diffusion of magnesium into boron
process „IMD“ and use it for winding working in „persistent mode“. It will be done dominantly for superconducting
joints of winding made by „wind and react“ technique, but joints for winding with already reacted MgB2 wires
made by „react and wind“ process will be developed as well. The properties of manufactured superconducting
MgB2 joints of different geometry and architecture will be subjected to mechanical and thermal treatments, which would reach the joint current around 50% of critical current measured for the reference MgB2 wire at external field 5 T. |
Study of TMD-based 2D heterostructures (TO-DO)
Štúdium 2D heteroštruktúr na báze TMD
REBCO superconductor tensile and compressive limits - methodology
Ťahové a tlakové limity REBCO supravodiča – metodológia
Thermal stability of superconducting coils and filamentized REBCO tapes
Tepelná stabilita supravodivých cievok a filamentovaných REBCO pások
| Duration: |
1.1.2024 - 31.12.2026 |
| Program: |
VEGA |
| Project leader: |
Mgr. Seiler Eugen PhD |
| Annotation: | The project investigates electro-thermal stability of filamentized superconducting REBCO tapes and
superconducting coils at transporting the electric current. The goal is to develop theoretical models and numerical
methods allowing to determine the maximum transport current that can flow through a superconducting coil or
through a filamentized tape without the risk of a rapid local heating. Characterization of tapes and coils will be
based on the standard measurement methods as well as on specially designed experiments, which will allow to
incorporate the real parameters of available superconducting tapes into the models. In order to experimentally
verify the theoretical models of thermal stability of superconducting coils, specific model coils will be built,
equipped with multiple voltage and temperature sensors for detailed monitoring of the electro-thermal stability.
The outcomes of the theoretical models will subsequently be applied at manufacturing bigger coils, relevant for
realistic electric devices. |
Thermal management in Ga2O3 based electronic and optoelectronic devices
Tepelný manažment elektronických a optoelektronických súčiastok na báze Ga2O3
| Duration: |
1.1.2025 - 31.12.2028 |
| Program: |
VEGA |
| Project leader: |
Ing. Ťapajna Milan PhD. |
| Annotation: | Ga2O3 represents a promising semiconductor material for future high-power electronic devices and UV and X-ray
detectors. A major drawback of Ga2O3 is its low thermal conductivity, which may represent a challenge in thermal
management of power devices operating in the ON state. The aim of this project is to develop advanced
strategies for thermal management in Ga2O3 based electronic and optoelectronic devices. First, we will focus on
the growth development of Ga2O3 layers on high-thermally conductive (HTC) substrates such as SiC and
diamond using three different CVD methods. We will investigate and optimize transport and thermal properties of
the Ga2O3 layer and Ga2O3/HTC substrate thermal boundary conductance. The second goal is to develop
technology for CVD growth of synthetic udoped diamond heat-spreading layer on the Ga2O3 based electronic
devices. Finally, we will develop heteroepitaxial pn photodiodes based on all-polycrystalline p-type
diamond/n-type Ga2O3 heterostructure for solar-blind photodetectors. |
Ternary chalcogenide perovskites for photovoltaics
Ternárne chalkogenidové perovskity pre fotovoltaiku
| Duration: |
1.7.2024 - 30.6.2028 |
| Program: |
SRDA |
| Project leader: |
Ing. Chromik Štefan DrSc. |
| Annotation: | The goal of the proposed project is the synthesis of ternary chalcogenides with perovskite structure and systematic
characterization of the relationship between the composition, structure, optical properties, thermal and chemical stability with the potential in the application in photovoltaics, or other optoelectronics. The result will be a set of prepared pure ternary chalcogenides in the form of crystalline powders and thin films with known, as well as newly prepared compositions and a comprehensive characterization of their optical and electronic properties, as well as thermal and chemical stability. Ternary chalcogenides will be prepared also by wet approach at lower temperature up to 350 °C in the form of nanocrystals which will be characterized in terms of their structure and morphology.
Proof-of-concept solar cell will be prepared, which has not yet been reported in the literature. The optimalization will be done based on performance measurements.
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Transistors based on 2D Metal Chalcogenides Grown via Thermally Assisted Conversion
Tranzistory na báze 2D kovových chalkogenidov pripravených teplom podporovanou konverziou
| Duration: |
1.7.2022 - 30.6.2026 |
| Program: |
SRDA |
| Project leader: |
Ing. Ťapajna Milan PhD. |
| Annotation: | 2D materials can form one-atom-thick sheets with extraordinary properties. One of the most promising classes of
2D materials is the transition metal dichalcogenides (TMDs). The transition from an indirect to a direct bandgap,
when the bulk materials is thinned down to a monolayer, results in unique electrical and optical properties of 2D
TMDs. Post-transition metal chalcogenides (PTMCs) represents another interesting group of 2D materials. These
materials have wide band gap and, depending on the structure of the material, show anisotropic electrical and
optical properties. The aim of this project is the fabrication of field-effect transistors with metal-oxide-semiconductor
gate (MOSFETs) based on selected TMDs and PTMCs compounds and detail analysis of their transport properties.
We will focus on large-area few-layer PtSe2 and GaS/GaSe films grown by thermal assisted conversion, i.e.
sulfurization and selenization. Based on the existing experiences, structural, chemical and electrical properties of
horizontally-aligned PtSe2 films prepared by selenization will be optimized, targeting mobilities similar to those
prepared by mechanical exfoliation. Then, MOSFET technology using both, top-gate as well as bottom-gate
approach will be developed and optimized. Atomic layer deposition and metal-oxide chemical vapor deposition
(MOCVD) will be employed for gate oxide growth. GaS/GaSe few-layer films will be prepared by chalcogenization |
Ultra-thin conformal surface coatings of complex-morphology structures for improving battery performance using atomic layer deposition
Ultratenké homogénne povrchové vrstvy na štruktúrach komplexnej morfológie pre vylepšenie výkonu batérii využitím depozície po atómových vrstvách
| Duration: |
1.1.2022 - 31.12.2025 |
| Program: |
VEGA |
| Project leader: |
Ing. Hudec Boris PhD. |
| Annotation: | Project is focused on the development and optimization of method of 3D deposition of conformal ultra-thin
coatings using ALD (atomic layer deposition) on structures of complex morphology, such as micro-porous layers
and powders. The method will subsequently be applied in preparation of new generation Li-based batteries, by
passivation and modification of micro-porous surfaces of cathode layers. Effect of ultra-thin ALD coatings
conformality at the nano-scale will be systematically evaluated by correlation of electron microscopy analyses
with electrochemical measurements of prepared batteries. Next step will be the modification of surfaces of
discrete metal and ceramic micro-particles and powders with the aim of their subsequent application in fabrication of novel ceramic and metal materials and also new materials for experimental battery electrodes. |
Large-scale production and characterization of 2D materials
Veľkoplošná výroba a charakterizácia 2D materiálov
Effect of the application of organic molecules on the properties of perovskite thin-film structures
Vplyv aplikácie organických molekúl na vlastnosti perovskitovských tenkovrstvových štruktúr
| Duration: |
1.7.2024 - 31.12.2027 |
| Program: |
SRDA |
| Project leader: |
RNDr. Španková Marianna PhD |
| Annotation: | In recent years, sufficient experimental evidence has accumulated that adsorbed organic chiral molecules affect
the superconducting properties of YBa2Cu3O7-x (YBCO) films. In some cases, an increase in their critical temperature Tc can be observed. On the other hand, it has been shown that in the case of ferromagnetic layers (e.g., cobalt), the application of chiral molecules can lead to a change in magnetization without the use of an electric current. An important role here is played by spin. Spin introduces an additional degree of freedom into the system, allowing devices, for example, to reduce electrical consumption or increase their computational capacity. Spintronic devices have become an attraction in electronics; however, problems associated with controlling spin remain a significant challenge. A unique way of manipulating spin is through the effect known as chirality-induced spin selectivity (CISS), which results from the specific structure of organic chiral molecules. The project focuses on the preparation and characterization of simple heterostructures and their interaction with chiral polymers deposited on the film surface. Specifically, it deals with the influence of chiral lactic acid on perovskite thin films, where the selected perovskites are high-temperature superconductor YBCO and ferromagnet La1-xSrxMnO3 (LSMO).
|
Impact of substrate material on positive bias temperature instabilities in enhancement mode Al2O3/InAlN/GaN MOSHEMTs
Vplyv substrátu na teplotné nestability pri kladnom napätí v obohacovacích Al2O3/InAlN/GaN MOSHEMT-och
Gallium oxide power transistors for high-voltage operation
Výkonové tranzistory na báze oxidu galitého pre vysokonapäťové aplikácie
| Duration: |
1.9.2025 - 31.8.2029 |
| Program: |
SRDA |
| Project leader: |
Ing. Gucmann Filip PhD. |
| Annotation: | In this project we will design, fabricate and test new Gallium oxide (GaO)-based power switching metal-oxidesemiconductor field-effect transistor (MOSFET) devices for high-voltage operation. We will develop high-quality
epitaxial GaO films on sapphire, SiC, and AlN/Si substrates using newly-purchased commercial Aixtron CCS
MOCVD system capable of growth on 2-4 inch wafers. One of the main focuses of the project will be on the
improvement of heteroepitaxial GaO films, targeting the engineering of in-plane rotational domains (IRDs), typically
present when GaO is grown on standard foreign substrates with hexagonal surface symmetry. We will
systematically optimize the growth parameters and introduce engineered substrates to break the surface
symmetry, allow for epitaxial lateral overgrowth, and promote the growth of specific GaO crystal orientations. As a
result, we expect lowered density of dislocations in GaO films and improved mobility of charge carriers, effectively
increasing output current in the fabricated MOSFETs. By means of by TCAD-based electrothermal simulations we
will focus on MOSFET design to achieve breakdown voltage >1 kV by introduction of various field plate structures,
while maintaining the low on-state resistance. Device layout will also be optimized do achieve enhanced thermal
Základný výskum / Basic research
APVV-24-0325
Akronym: GO4HV 04.02.2025 15:35 Strana/Page: 2
VV 2024
performance for improved device reliability and lifetime. Using the optimized device structure, MOSFETs will be
fabricated via conventional photolightography, dry etching, PVD, ALD, and PE-CVD deposition techniques.
Electrical properties including device reliability and breakdown will be analysed and used to verify the TCAD
simulations and further improve design of the GaO MOSFETs. |
Fabrication of ferromagnetic nanostructures for magnonic crystal
Výroba feromagnetických nanoštruktúr pre magnónový kryštál
Research of fabrication technology for low-cost oxide-based semiconductorelectronic devices for IoT and sensor applications
Výskum technológie výroby nízkonákladových polovodičových zariadení na báze oxidov pre IoT a senzorové aplikácie
| Duration: |
1.1.2024 - 30.6.2026 |
| Program: |
|
| Project leader: |
Ing. Ťapajna Milan PhD. |
| Annotation: | Inkjet printing of sol-gel material inks and aerosol chemical vapor deposition are low-cost techniques for depositing thin oxide-based semiconductor layers as well as for fabricating electronic components. They offer several advantages over standard methods, including simplicity, low production costs, adaptability, and the ability to deposit layers at low temperatures and without the need for vacuum conditions. These techniques have the potential to revolutionize the fabrication of oxide semiconductor devices and enable their application across a wide range of fields. The proposed project focuses on researching these advanced deposition techniques and culminates in concept demonstrators of oxide-based semiconductor components. Low-cost deposition methods can be optimized to be more energy-efficient and environmentally friendly, contributing to more sustainable semiconductor manufacturing. As costs continue to decrease, technologies that were previously expensive may become more accessible to marginalized or developing regions. |
Harnessing the energy of rivers for everyone
Využitie energie riek pre každého
Development of Advanced Nano-structured Materials for Electrocatalysis using an Eco-friendly Deep Eutectic Solvents: A Sustainable Approach to Decarbonisation
Vývoj pokročilých nanoštruktúrovaných materiálov pre elektrokatalýzu s použitím ekologických hlboko eutektických rozpúšťadiel: Trvalo udržateľný prístup k dekarbonizácii
| Duration: |
1.1.2025 - 31.8.2026 |
| Program: |
|
| Project leader: |
Ing. Šoltýs Ján PhD |
| Annotation: | The project “Development of Advanced Nanostructured Materials for Electrocatalysis Using Green Deep Eutectic Solvents: A Sustainable Approach to Decarbonization” addresses the urgent global challenge of decarbonization by developing highly efficient electrocatalysts for the production of “green” hydrogen. This innovative and comprehensive research initiative goes beyond the current state of the art in several key directions. By employing environmentally friendly deep eutectic solvents and advanced catalyst supports such as metallic and carbon foams, the project focuses on the research, development, optimization, and characterization of new electrocatalysts designed for efficient hydrogen evolution in alkaline aqueous solutions. These catalysts, consisting of nanostructured alloy coatings based on Ni, Co, Mo, and Fe, and composites containing S and P coated with noble metal nanoparticles, are engineered to enhance electrocatalytic activity and stability. The uniqueness of the project lies in its profound theoretical scope, which not only investigates electrolytic and electroless deposition of catalysts but also provides an in-depth understanding of the relationship between composition, morphology, and catalytic performance. The goal of the project is to develop comprehensive theories that enable the effective design of multifunctional catalysts that synergistically combine the advantages of various active sites, thereby pushing the boundaries of catalysis research. Furthermore, the project will evaluate the applicability of these new materials for potential industrial applications, taking into account factors such as cost-effectiveness, energy efficiency, and feasibility.
By emphasizing the production of “green” hydrogen using renewable energy sources, the project supports the global transition toward cleaner energy solutions, contributes to carbon emission reduction, and addresses sustainability challenges. This forward-looking approach is based on interdisciplinary collaboration and interregional partnerships, laying the foundation for future EU-funded projects such as those supported by the European Research Council (ERC) and Horizon Europe.
The proposed project represents a significant step forward in the field of electrocatalysis, offering a holistic approach to addressing the challenges of catalysis and hydrogen production. The innovative materials, novel methodologies, sustainable practices, and theoretical foundations developed through this project will serve as a transformative force on the path toward a cleaner and more sustainable energy future. |
Reduction of AC losses in a cable model made of striated hightemperature superconductors
Znižovanie striedavých strát v modeli kábla zo zväzku filamentovaných vysokoteplotných supravodičov
| Duration: |
1.9.2025 - 31.8.2029 |
| Program: |
SRDA |
| Project leader: |
Mgr. Seiler Eugen PhD |
| Annotation: | High-temperature superconductors based on REBCO (Rare Earth Barium Copper Oxide) are used in magnet
windings for devices with high magnetic fields (>10 T) such as particle accelerators or nuclear fusion reactors.
During the operation of these devices, alternating current (AC) losses occur and REBCO tapes are affected by
cyclic electromagnetic forces, arising during the time change of the magnetic field, which can cause failure of the
device. The aim of this project will be the development of a striated REBCO tapes and a TORT (Tapes on Round
Tube) type cable with low AC losses and high mechanical toughness (for example fatigue strength). We plan to
achieve the reduction of AC losses by striating the REBCO tape and altering the material of the cable former.
However, after such process, it is necessary to protect the striated REBCO layers with an additional (multi)layer for
the purpose of chemical and thermal stabilization. The former of the cable will be 3D printed from a composite
Základný výskum / Basic research
APVV-24-0061
Akronym: ZnižStrStr 23.09.2025 10:50 Strana/Page: 2
VV 2024
material based on PETG CF (polyethylene terephthalate glycol reinforced with carbon fiber), with much lower
electrical conductivity than previously used formers. By altering the material of the former in the TORT cable, we
can reduce the total magnetization losses by decreasing the eddy currents, which were contributed by the copper
former. According to numerical calculations (ANSYS, COMSOL), we apply the corresponding mechanical load to
REBCO tapes (untreated/striated) and cables from these REBCO tapes. Afterwards, we determine the mechanical
toughness of the cables, which will be optimized by studying the REBCO tape damage using SEM, FIB, XPS and
ERDA methods. A successful production of a short TORT cable with a stabilization (multi)layer wound on a
composite former will be a confirmation of the suitability of this cable concept. By combining the above materials,
we can create an innovative superconducting cable with significantly reduced AC losses and high mechanical
toughness.
|
The total number of projects: 41
