Institute of Electrical Engineering SAS
Application of the metadynamics algorithm to micromagnetism |
Adaptácia algoritmu metadynamiky na problémy mikromagnetizmu |
Program: |
VEGA |
Project leader: |
Ing. Tóbik Jaroslav PhD. |
Annotation: | The subject of micro-magnetism studies are phenomena which are possible to describe on classical
level of the theory. Micromagnetism describes processes in devices like bit-patterned media in harddisks,
magnetic memories, magnetic radio-waves detectors, or bio and medical applications. Typical
dimensions of the devices active parts are order from micro-meter to few nanometers. Typical operation
temperature is room temperature. Usual model for these condition is classical physics. The main
problem of the magnetic state stability simulation is the time-scale on which the magnetic state
typically persist. The magnetic state in memories is stable for years. There are several effective
algorithms for finding lowest energy paths among metastable states. In order to search for stable
magnetic states effectively, we decided to implement matadynamics algoritm into micro-magnetic
solvers. |
Duration: |
1.1.2018 - 31.12.2021 |
Building a centre for advanced material application SAS |
CEMEA - Vybudovanie centra pre využitie pokročilých materiálov SAV |
Program: |
|
Project leader: |
Ing. Ťapajna Milan PhD. |
Duration: |
1.7.2019 - 30.6.2023 |
Real-time grow studies of hybrid van der Waals heterostructures |
Časovo-rozlíšené štúdium rastu hybridných van der Waalsových heteroštruktúr |
Program: |
SRDA |
Project leader: |
Dr. rer. nat. Hulman Martin |
Duration: |
1.8.2018 - 30.6.2022 |
Long-range proximity effect in superconductor / ferromagnet heterostructures |
Dlhodosahový jav blízkosti v supravodič/feromagnet heteroštruktúrach |
Program: |
SRDA |
Project leader: |
Ing. Chromik Štefan DrSc. |
Duration: |
1.7.2020 - 31.12.2023 |
Evolution of colour centres in diamond and their properties towards quantum detection |
Formovanie farebných centier v diamante a ich vlastností smerom ku kvantovej detekcii |
Program: |
SRDA |
Project leader: |
Ing. Varga Marian PhD. |
Duration: |
1.7.2021 - 31.12.2024 |
TMD/diamond heterostructures: Fabrication, characterization and applications |
Heteroštruktúry TMD/diamant: Príprava, charakterizácia a aplikácia |
Program: |
|
Project leader: |
Ing. Varga Marian PhD. |
Duration: |
1.8.2020 - 31.7.2024 |
Magnetic cloaks from superconductor/ferromagnet composites |
Magnetické plášte z kompozitov supravodič/feromagnetikum |
Program: |
SRDA |
Project leader: |
doc. Ing. Gömöry Fedor DrSc. |
Annotation: | Realization of a magnetic cloak allowing to hide objects from being observed by a magnetic detector enables the experimental study of several fundamental problems of electromagnetism as well as the searching for innovative solutions of practical problems of magnetic field shielding and shaping. Main aim of the project is the development of methods for design and realization of magnetic cloaks that would provide the possibility to investigate these topics. Basic property we will pursue is the magnetic invisibility when a detector placed outside the cloak will not notice the cloak itself nor a “magnetic cargo” it would contain. Theoretical predictions for reaching perfect invisibility assume unrealistic properties of the used materials and work with ideal and simple shapes without any limitation of dimensions. That is why an important part of the project will be the search and testing of new numerical modelling methods able to include these substantial aspects of real objects. With help of these novel methods we plan to demonstrate the 99% perfection in magnetic invisibility at frequencies from DC to 1000 Hz. Our research could help to reach the following goals: a) Creation of space for experiments in biology shielding the Earth magnetic field as well as that produced in urban environment. Room temperature cylindrical space with at least 50 mm diameter and 150 mm height should allow easy sample exchange and manipulation. b) Design and manufacturing of the cloak for magnetic fields in the 0.1 T range with the volume exceeding 1000 cm3 for the purpose of protecting a sensitive electronic circuitry or e.g. formation of working space for DC arc welding in vicinity of electrical machines generating the stray field at this level. c) Investigation of force exerted on the cloak by a non-uniform magnetic field, in particular the possibility of a magnetic propulsion with help of controlling the magnetic moment of the superconductor/ferromagnet composite. |
Duration: |
1.7.2017 - 28.2.2021 |
Fabrication, physics and correlated states in metallic 2D transition metal dichalcogenides |
Metalické 2D dichalkogenidy prechodných kovov: príprava, štúdium vlastností a korelované stavy |
Program: |
SRDA |
Project leader: |
Dr. rer. nat. Hulman Martin |
Annotation: | The discovery of graphene in 2004 has brought a massive interest of scientists active in condensed-matter physics
on research of 2D materials. Even though these materials have a long history starting already in the twenties of the
20th century, the past years have seen an intensive renascence of interest in 2D materials. Ultra-thin samples of
many 2D materials have been successfully prepared with electronic properties that may exhibit correlated
electronic phenomena such as charge density waves and superconductivity. One of the well-studied families of the
2D materials are transition metal dichalcogenides (TMDs). TMDs consist of hexagonal layers of metal atoms
sandwiched between two layers of chalcogen atoms with a MX2 stoichiometry.
In this project, we focus on those materials from the TMD family that exhibit strongly correlated electronic states:
NbSe2, TiSe2, TaS2, TaSe2 and PtSe2. The goal of the project is to prepare ultrathin (≤ 10 nm) layers and bulk
samples and characterise them thoroughly in terms of the thickness, crystallinity, homogeneity, optical and
electronic properties. A special attention will be paid to charge density wave states and superconductivity in these
materials and how they evolve with the sample thickness, doping, external electric and magnetic fields and details
of the growth process.
The scientific program also aims at preparing heterostructures built up of these materials as well as hybrid systems
combining TMDs with other materials. This research also includes a detailed characterisation of heterostructures to
provide a feedback to optimise the growth process. |
Duration: |
1.7.2020 - 30.6.2023 |
Perovskite thin films and structures for modern electronics and sensorics |
Perovskitovské tenké vrstvy a štruktúry vhodné pre modern elektroniku a senzoriku |
Program: |
VEGA |
Project leader: |
RNDr. Španková Marianna PhD |
Annotation: | We prepare different types of perovskite films -ferromagnetic, superconducting, dielectric- (thickness up to 100
nm) and micro- and nano structures. YBa2Cu3Ox superconducting microstrips will be irradiated by electrons (30
keV) with the aim to create channels for easy vortex motion. We also focus on detailed study of Si/dielectric layer
interface using unconventional materials (SrO, TiN) with the aim to enable epitaxial growth of buffer layers
necessary for realization of uncooled microbolometers on the base of La0.67Sr0.33MnO3 films working and at
frequencies in THz range. Beside the Bi4Ti3O12 studied so far different types of other buffer layers will be tested
in order to develop new types of bolometers. We continue in study of perovskite superconductor S/ferromagnet F
and S/F/S structures with the aim to resolve the phenomenom of S/F thin films interaction (proximity effect). The
implementation of pi-type Josephson junction in digital and quantum circuits may solve some problems of
superconducting qubits. |
Duration: |
1.1.2018 - 31.12.2021 |
Advanced III-N devices for energy and information transfer |
Pokročilé III-N súčiastky pre prenos informácie a energie |
Program: |
VEGA |
Project leader: |
Ing. Kuzmík Ján DrSc. |
Annotation: | Gallium Nitride (GaN) and related compounds commonly referred as III-N have significantly more flexible energy gap, higher breakdown electric field intensity, a large spontaneous polarization, high thermal and radiation resistance, but also the high mobility of electrons. Therefore there is an effort to develop III-N semiconductor devices, mainly HFETs, which have the potential to gradually replace Si, Si/SiGe, GaAs and InP devices in microwave and power applications, switches, switching amplifiers, logic circuits and mixed-signal electronics. Consequently, in this manner we aspire to develop HFETs with InN channel for ultra-fast information transfer, advanced GaN-based transistor switches for energy conversion, technology of GaN-based fast mixed-signal electronics, and GaN-based UV sensors for space applications. |
Duration: |
1.1.2018 - 31.12.2021 |
Advanced MgB2 superconductor without diffusion barrier |
Pokrokový MgB2 supravodič bez difúznej bariéry |
Program: |
VEGA |
Project leader: |
Ing. Kováč Pavol DrSc. |
Annotation: | The essence of the project is to prepare and optimize the method of preparation of superconducting composite wire (filaments) by the method of magnesium infiltration or diffusion into boron. The main emphasis will be focused on the simplicity of preparation (without the diffusion barrier), the availability and suitability of the sheath materials and their electro-mechanical properties. The properties of the MgB2 superconducting core will be controlled by technological preparation, annealing conditions, and possible doping. Selection of suitable materials and technological processes allows monitoring of effects on micro-structure, mechanical properties and superconductive properties: critical current density at temperatures in the range of 4.2 - 20 K, critical temperature, connectivity or losses in alternating magnetic field. The role of the project will be also to examine the possibility of creating superconducting links. |
Duration: |
1.1.2020 - 31.12.2021 |
Fabrication, characterization, and doping of ultra-thin layers of transition metal dichalcogenides |
Príprava, charakterizácia a dopovanie ultratenkých vrstiev dichalkogenidov prechodných kovov |
Program: |
VEGA |
Project leader: |
Mgr. Sojková Michaela PhD. |
Annotation: | Thanks to the unusual physical properties, 2D materials have been intensively studied for several years. An
interesting group of this class of materials is transition metal dichalcogenides TMD. They have a hexagonal
structure with the individual layers bonded to each other only by weak Van der Waals bonds. This causes
significantly anisotropic properties and has a significant effect on their electronic structure. Some of them show
physically interesting correlated states (superconductivity, charge density waves). The primary goal of this project
is to prepare and study the properties of thin layers of 2 different TMD - MoS2 and PtSe2, and to study the
influence of doping with Li and Na cations on the electrical and structural properties of these layers. The
secondary goal is to optimize growth and doping conditions to improve the parameters of thin films, such as
electrical conductivity and charge carrier mobility which will enable the preparation of functional electronic
components - transistors. |
Duration: |
1.1.2021 - 31.12.2024 |
Radiation harder sensor for X-ray imaging of higher quality |
Radiačne odolnejší senzor pre RTG zobrazovanie vyššej kvality |
Program: |
SRDA |
Project leader: |
Mgr. Zaťko Bohumír PhD |
Duration: |
1.7.2019 - 30.6.2023 |
Growth and characterization of a material from the group of transition metal dichalcogenides: titanium diselenide |
Rast a charakterizácia materiálu zo skupiny dichalkogenidov prechodových kovov: diselenid titánu |
Program: |
VEGA |
Project leader: |
Ing. Precner Marián PhD. |
Duration: |
1.1.2019 - 31.12.2021 |
Robust spin waves for future magnonic applications |
Robustné spinové vlny pre budúce magnonické aplikácie |
Program: |
SRDA |
Project leader: |
Dr. Mruczkiewicz Michal |
Annotation: | In this project we will focus on the theoretical and experimental investigation of spin wave dynamics at nanoscale. Spin wave is considered as candidate for an information carrier in ultrafast and energy efficient information processing devices. It is due the unique properties of spin waves, namely low heat dissipation, possible manipulation at nanoscale or reconfigurability. We are going to investigate specific spin wave systems, that can host robust, unidirectional and reprogrammable spin waves. Therefore, the results of this project will contribute to the field of modern magnetism, magnonics. |
Duration: |
1.7.2020 - 30.6.2023 |
X-ray optics with curved surfaces |
Röntgenová optika so zakrivenými povrchmi |
Program: |
SRDA |
Project leader: |
Ing. Zápražný Zdenko PhD. |
Duration: |
1.7.2021 - 30.6.2025 |
Superconducting coils made of uniform MgB2 wires with tubular filaments |
Supravodivé vinutia z homogénnych MgB2 drôtov s trubičkovými vláknami |
Program: |
SRDA |
Project leader: |
Ing. Kováč Pavol DrSc. |
Annotation: | The aim of this project is to develop the process of infiltration/diffusion (IMD) for long and uniform superconducting wires with tubular MgB2 filaments resulting in high engineering current densities measured in coils cooled by solid nitrogen in persistent mode. The main aim is to increase three times the engineering current density in long IMD MgB2 wires in comparison to those commercially obtained by powder-in-tube (PIT) process, especially in the range of magnetic fields 1-5T and temperatures around 20K |
Duration: |
1.7.2019 - 30.11.2021 |
Study of magnetic effects at nanoscale |
Štúdium magnetických efektov na nanoúrovni |
Program: |
VEGA |
Project leader: |
Ing. Šoltýs Ján PhD |
Duration: |
1.1.2019 - 31.12.2021 |
Thin film structures for energy applications |
Tenkovrstvové štruktúry pre využitie v energetike |
Program: |
VEGA |
Project leader: |
Ing. Fröhlich Karol DrSc. |
Annotation: | The project is aimed at preparation of thin film structures for energy applications. We will focus on preparation
and study of properties of transparent conducting electrodes for organic photovoltaic cells and organic light
emitting diodes as well as on encapsulation of these devices in the first part. We will concentrate also on
preparation and study of properties metal-insulator-semiconductor structures suitable as photoanodes for water
splitting under sun light. The next part of the project will be devoted to study of thin film electrodes for energy
storage in batteries and ton preparation of structures for supercapacitors. Thin film in these devices will be
prepared by atomic layer deposition and liquid injection metal organic chemical vapour deposition. Prepared
structures will constitute a base for new advanced devices for energy applications. |
Duration: |
1.1.2018 - 31.12.2021 |
Tribological properties of 2D materials and related nanocomposites |
Tribologické vlastnosti 2D materiálov a príbuzných nanokompozitov |
Program: |
SRDA |
Project leader: |
Dr. rer. nat. Hulman Martin |
Duration: |
1.8.2018 - 30.6.2022 |
Vertical GaN MOSFET for power switching applications |
Vertikálny GaN MOSFET pre výkonové spínacie aplikácie |
Program: |
SRDA |
Project leader: |
Ing. Kuzmík Ján DrSc. |
Annotation: | Owing the ever growing demand for the energy volume, energy attainability represents one of the most important issues of today’s society. However, there are great reserves in the energy savings available. According to available analyses, more than 10% of all electricity is ultimately lost in the form of conversion losses. Clearly, even partial improvement in the conversion efficiency can have strong economic impact. As the most of energy is now used for the electronics, corresponding scale of the losses forms at the end-user side, where the electricity is converted into a form suitable for a particular appliance. The main effort towards the conversion efficiency improvements therefore targets the area of power AC/DC and DC/DC converters for consumer and industrial electronics. Significant improvement in the conversion efficiency can be achieved by using GaN based transistors, as they are capable to operate at much higher frequencies with almost three times lower switching losses compared to Si devices.
The main goal of the project is the research and development of vertical GaN MOSFET without using p-doping, and gaining the original knowledge on electrical and physical properties of the developed devices. From the quantitative point of view, our proof-of-concept device will target RON<2 mOhm/cm2 and VBD>600 V. An original feature of the proposed concept is utilization of the semi-insulating (SI) GaN as a channel layer (instead of p-type GaN), which blocks the current flow through the transistor at zero gate voltage. To open the transistor channel, positive voltage applied to the gate will be needed to induce down bend-bending in the SI GaN, allowing electron injection from the source to the drift region (along the side walls of SI GaN). This concept therefore represents a unipolar enhancement-mode transistor, while drift region is formed of un-doped GaN with extremely low density of dislocation grown directly on GaN substrate.
|
Duration: |
1.7.2019 - 30.6.2022 |
Research of radiation resistant semiconductor detector for nuclear energies |
Výskum radiačne odolných polovodičových detektorov pre jadrovú energetiku |
Program: |
SRDA |
Project leader: |
Mgr. Zaťko Bohumír PhD |
Duration: |
1.7.2019 - 31.12.2022 |
Radiation resistant semiconductor sensors for utilization in harsh environment |
Vysokoodolné polovodičové senzory ionizujúceho žiarenia pre využitie v radiačnom prostredí |
Program: |
VEGA |
Project leader: |
Mgr. Zaťko Bohumír PhD |
Annotation: | Recently, detectors of ionizing radiation are important part of many fields of science and research. The object of proposal is research of various semiconductor detector structures based on Si, GaAs, 4H-SiC and CdTe as a detector of ionizing radiation where 4H-SiC is wide bandgap semiconductor which is radiation resistant material suitable for long term work in harsh environment. This includes optimization of prepared sensor in term of utilization and also what type of radiation will be detected. Also passivation and encapsulation is important in long term word of prepared sensors. The contribution will be also in the simulation due to optimization of size and thickness of sensor contacts and passivation. The prepared structures will be characterized by electrical (curren-voltage and capacitance-voltage measurements) and spectrometric measurements using standartly used radioisotope sources. Also radiation hardness of samples will be tested (increased temperature, ionizing environment). |
Duration: |
1.1.2020 - 31.12.2023 |
High temperature superconducting coils in motors for electric and hybrid aircrafts |
Vysokoteplotná supravodivá cievka pre motory elektrických a hybridných lietadiel |
Program: |
SRDA |
Project leader: |
Mgr. Pardo Enric PhD. |
Annotation: | Full superconducting electric motors are very promising to provide the
required power density to enable
commercial hybrid and electric airplanes. These can reduce emissions by
75 % in CO2 and 90 % in NOx, following
the ACARE Flightpath 2050 targets of the European Union. Superconducting
motors can also be applied to cleaner
sea or sweet water transport. In spite of the extensive research in the
area, the electro-magnetic and electro-
thermal properties of superconducting coils in the motor magnetic
environment remain largely unknown, partially
because of the lack of measurements of the relevant temperatures
(between 20-40 K) and modeling methods for
full superconducting motors.
The aim of this project is to gain this understanding and develop numerical modeling methods to enable the design of future superconducting motors. These methods will be compared to experiments in the relevant temperature range for motor applications. |
Duration: |
1.7.2020 - 30.6.2023 |
High-performance curved X-ray optics prepared by advanced nanomachining technology |
Vysokovýkonná zakrivená röntgenová optika pripravená pokročilou technológiou nanoobrábania |
Program: |
VEGA |
Project leader: |
Ing. Zápražný Zdenko PhD. |
Duration: |
1.1.2021 - 31.12.2023 |
GaN-based heterostructure as a promising UV sensor for space application |
Vývoj UV senzora na báze GaN pre vesmírne aplikácie |
Program: |
VEGA |
Project leader: |
Ing. Stoklas Roman PhD. |
Duration: |
1.1.2019 - 31.12.2022 |
The total number of projects: 26