Čo ponúkame - Najlepšie výsledky

Rast tenkých vrstiev organických polovodičov pre optoelektroniku

11. 12. 2022 | videné 185-krát

Orientácia organických molekúl (napr. stojaca, ležiaca) v organických tenkých vrstvách má zásadný vplyv na ich optoelektronické vlastnosti. Riešitelia sa preto zamerali na možnosť riadenia molekulárnej orientácie v tenkých organických vrstvách s využitím vhodných nízkodimenzionálnych podkladových vrstiev ako grafén a dvojdimenzionálny MoS2 [1, 2], ktoré slúžia ako šablóna. Ukázali, že grafén iniciuje rast ležiacej fázy rôznych molekúl ako napr. 5,5'-bis(naft-2-yl)-2,2'-bitiofénu (NaT2) [3]. Na zabudovanie inak orientovanej fázy, ako napr. stojacej fázy, by sa však musela použiť šablóna z iného materiálu. Na prekonanie tohto obmedzenia použili vrstvy 2D vločiek MoS2 s hrúbkou niekoľko monoatomárnych rovín s rôzne orientovanými kryštalografickými osami c. Ukázali, že takéto vrstvy MoS2 s rôznou orientáciou osi c iniciujú rast rôzne orientovaných fáz organických filmov, ako napr. 1-[5'-(2- naftyl) -2,2'-bitiofén-5-yl] hexán-1-ón (NCOH) a diindenoperylén (DIP) [4, 5]. To dáva univerzálnu možnosť kontrolovaného rastu molekulárnych vrstiev s kryštalograficky odlišne orientovanými doménami na tej istej šablóne. Na sledovanie tohto rastu z hľadiska vývoja kryštalickej fázy a monitorovanie vývoja povrchovej morfológie v reálnom čase ďalej rozpracovali metódu in situ röntgenového rozptylu pod malým uhlom dopadu (GIWAXS) [6].

Fyzikálny ústav SAV

Riešitelia: Peter Šiffalovič, Naďa Mrkývková, Jakub Hagara, Peter Nádaždy, Ashin Shaji, Michal Bodík, Jurij Halahovets, Alica Brunová, Matej Jergel, Eva Majková

[1] HUTÁR, Peter – SOJKOVÁ, Michaela – KUNDRATA, Ivan – VÉGSO, Karol – SHAJI, Ashin – NÁDAŽDY, Peter – PRIBUSOVÁ SLUŠNÁ, Lenka – MAJKOVÁ, Eva – ŠIFFALOVIČ, Peter – HULMAN, Martin. Correlation between the crystalline phase of molybdenum oxide and horizontal alignment in thin MoS2 films. In Journal of Physical Chemistry C, 2020, vol. 124, no. 35, p. 19362-19367. (2019: 4.189 – IF, Q2 – JCR, 1.477 – SJR, Q1 – SJR, karentované – CCC). (2020 – Current Contents). ISSN 1932-7447. Dostupné na: https://doi.org/10.1021/acs.jpcc.0c05336.
[2] BODIK, Michal – DEMYDENKO, Maksym – SHABELNYK, Tetiana – HALAHOVETS, Yuriy – KOTLAR, Mario – KOSTIUK, Dmytro – SHAJI, Ashin – BRUNOVA, Alica – VEIS, Pavel – JERGEL, Matej – MAJKOVÁ, Eva – ŠIFFALOVIČ, Peter. Collapse Mechanism in Few-Layer MoS2 Langmuir Films. In Journal of Physical Chemistry C, 2020, vol. 124, no. 29, p. 15856-15861. (2019: 4.189 – IF, Q2 – JCR, 1.477 – SJR, Q1 – SJR, karentované – CCC). (2020 – Current Contents). ISSN 1932-7447. Dostupné na: https://doi.org/10.1021/acs.jpcc.0c02365.
[3] HUSS-HANSEN, M.K. – HODAS, Martin – MRKÝVKOVÁ, Naďa, Tesatová – HAGARA, Jakub – JENSEN, B. B. E. – OSADNIK, A. – LÜTZEN, A. – MAJKOVÁ, Eva – ŠIFFALOVIČ, Peter – SCHREIBER, F. – TAVARES, L. – KJELSTRUP-HANSEN, J. – KNAAPILA, M. Surface-Controlled Crystal Alignment of Naphthyl End-Capped Oligothiophene on Graphene: Thin-Film Growth Studied by in Situ X-Ray Diffraction. In Langmuir, 2020, vol. 36, no. 8, p. 1898–1906. (2019: 3.557 – IF, Q2 – JCR, 1.088 – SJR, Q1 – SJR, karentované – CCC). (2020 – Current Contents). ISSN 0743-7463. Dostupné na: https://doi.org/10.1021/acs.langmuir.9b03467.
[4] HAGARA, Jakub – MRKÝVKOVÁ, Naďa, Tesatová – NÁDAŽDY, Peter – HODAS, Martin – BODIK, Michal – JERGEL, Matej – MAJKOVÁ, Eva – TOKÁR, Kamil – HUTÁR, Peter – SOJKOVÁ, Michaela – CHUMAKOV, A. – KONOVALOV, O. – PANDIT, P. – ROTH, S. – HINDERHOFER, A. – HULMAN, Martin – ŠIFFALOVIČ, Peter – SCHREIBER, F. Reorientation of π-conjugated molecules on few-layer MoS2 films. In Physical Chemistry Chemical Physics, 2020, vol. 22, p. 3097-3104. (2019: 3.430 – IF, Q1 – JCR, 1.143 – SJR, Q1 – SJR, karentované – CCC). (2020 – Current Contents). ISSN 1463-9076. Dostupné na: https://doi.org/10.1039/c9cp05728e.

[5] HAGARA, Jakub – MRKÝVKOVÁ, Naďa, Tesatová – FERIANCOVÁ, Lucia – PUTALA, Martin – NÁDAŽDY, Peter – HODAS, Martin – SHAJI, Ashin – NÁDAŽDY, Vojtech – HUSS-HANSEN, M.K. – KNAAPILA, M. – HAGENLOCHER, J. – RUSSEGGER, N. – ZWADLO, M. – MERTEN, L. – SOJKOVÁ, Michaela – HULMAN, Martin – VLAD, A. – PANDIT, P. – ROTH, S. – JERGEL, Matej – MAJKOVÁ, Eva – HINDERHOFER, A. – ŠIFFALOVIČ, Peter – SCHREIBER, F. Novel highly substituted thiophene- based n-type organic semiconductor: structural study, optical anisotropy and molecular control. In CrystEngComm, 2020, vol. 22, no. 42, p. 7095-7103. (2019: 3.117 – IF, Q2 – JCR, 0.814 – SJR, Q1 – SJR, karentované – CCC). (2020 – Current Contents). ISSN 1466-8033. Dostupné na: https://doi.org/10.1039/d0ce01171a.
[6] MRKÝVKOVÁ, Naďa, Tesatová – NÁDAŽDY, Peter – HODAS, Martin – CHAI, J. – WANG, S. – CHI, D. – SOJKOVÁ, Michaela – HULMAN, Martin – CHUMAKOV, A. – KONOVALOV, O. – HINDERHOFER, A. – JERGEL, Matej – MAJKOVÁ, Eva – ŠIFFALOVIČ, Peter – SCHREIBER, F. Simultaneous monitoring of molecular thin film morphology and crystal structure by x-ray scattering. In Crystal Growth & Design, 2020, vol. 20, p. 5269–5276. (2019: 4.089 – IF, Q1 – JCR, 1.004 – SJR, Q1 – SJR, karentované – CCC). (2020 – Current Contents). ISSN 1528-7483. Dostupné na: https://doi.org/10.1021/acs.cgd.0c00448.