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PhD. Topics

Institute of Electrical Engineering SAS

Topic
Technology of epitaxial growth of (ultra)wide bandgap semiconductors using metalorganic chemical vapour deposition (MOCVD) and investigation of their structural, electrical, and optical material properties.
PhD. program
Electronics and Photonics
Name of the supervisor
Ing. Filip Gucmann, PhD.
Contact:
Receiving school
Faculty of Electrical Engineering and Information Technology, Slovak University of Technology in Bratislava
Annotation
Semiconductor materials with bandgap energies (Eg) exceeding that of Si or GaN (Eg ~ 1.1 eV or 3.4 eV), i.e. (ultra)wide bandgap (UWB) materials offer great potential for manufacture of future electronic devices with increased radiation hardness, efficiency, and reliability, and capability of operation at high voltages. UWB-based electronic devices bring the opportunity in rapid deployment of modern, environmentally friendly technologies such as electric transportation (e.g. electric cars, trains, ships, planes) or more efficient electric energy transformation and handling in end-user consumer electronics with strong implications for decreasing of the CO2 levels production.
Gallium oxide (Ga2O3) represents a modern semiconductor material candidate for future high-voltage (>8 kV) and/or high-power electronic devices owing to its unprecedented material properties such as ultrawide bandgap energy (Eg ~ 4.8-5.4 eV), high theoretical breakdown field (Ebr ~ 8 MV/cm), and relatively simple synthesis of thin films and bulk crystals.
The main focus of this thesis will be a systematic study of epitaxial growth of thin film Ga2O3 or similar materials, e.g. (AlxGa1-x)2O3 or (InxGa1-x)2O3 of various crystal phases and on various substrates (e.g. Al2O3, SiC) using modified metalorganic chemical vapour deposition (MOCVD) techniques and investigation of the material properties of prepared layers (structural, electrical, and optical). Early stages of Ga2O3 growth will be studied in detail to understand the chemical and physical processes participating in the epitaxial growth.
For this study, we will use the state-of-the-art technological equipment and methods, available at the Institute of Electrical Engineering, SAS and Institute of Physics, SAS. A successful candidate will acquire a hands-on experience with the wide range of experimental techniques for material diagnostics (e.g. X-ray diffraction, atomic force microscopy, Raman spectroscopy, and various advanced electrical methods).