Institute of Electrical Engineering SAS
Topic
Development of Ga2O3 transistors for applications in kV range
PhD. program
Electronics and Photonics
Year of admission
2024
Name of the supervisor
Ing. Milan Ťapajna, PhD.
Contact:
Receiving school
Faculty of Electrical Engineering and Information Technology, Slovak University of Technology in Bratislava
Annotation
Current power electronic device market is mostly covered by Si (<1kV voltage range) and SiC and GaN (up to several kV) devices. However, there are practically no semiconductor power devices available for and above the 10-kV range. Gallium oxide (Ga2O3) is a promising ultra-wide bandgap (Eg=4.8–5.3 eV) semiconductor material, which offers technological potential for design of new electronic devices capable of handling this voltage range. Such devices can enable development of systems for transportation utilising electric drive (cars, trains, ships, aircrafts) or transformation for high-voltage DC power distribution networks. The aim of the thesis will be the design of power devices (diodes, transistors) for kV region using complex software tools as well as the fabrication of SBDs and MOSFET transistors using state-of-the-art semiconductor technologies available at IEE SAS. The mechanism of electrical transport and breakdown of the prepared devices will also be comprehensively analysed. The work will be carried out in the framework of a joint project with the Taiwanese partner ITRI (Industrial Technology Research Institute).