Institute of Electrical Engineering SAS
Study of transport properties of Ga2O3 transistors for applications in kV range
Electronics and Photonics
Name of the supervisor
Ing. Milan Ťapajna, PhD.
Faculty of Electrical Engineering and Information Technology, Slovak University of Technology in Bratislava
Current electronic power device market is mostly covered by Si (<1kV voltage range) and SiC and GaN (up to several kV) devices. At present, however, there are practically no semiconductor power devices available for and above the 10-kV range. Gallium oxide (Ga2O3) is a promising ultra-wide bandgap (Eg=4.8–5.3 eV) semiconductor material, which offers technological potential for design of new electronic devices capable of handling this voltage range. Such devices can enable development of systems for transportation utilising electric drive (cars, trains, ships, aircrafts) or transformation for high-voltage DC power distribution networks. Currently, great research effort is focused on growth of Ga2O3 and development of related electronic devices for power applications. The aim of this work will be the preparation and detailed characterization of transistors based on Ga2O3 layers prepared by chemical vapor deposition (CVD) methods available at the Institute of Electrical Engineering SAS. The main focus will be on studying the transport and structural properties of the prepared Ga2O3 epitaxial layers to achieve high charge carrier mobility. Ga2O3 layers with different crystalline structure and various impurities will be studied. Based on the obtained knowledge, the preparation of Ga2O3 transistors and their detailed electrical characterization will be performed. The electrical breakdown mechanism of the prepared devices will also be analyzed.