Institute of Electrical Engineering SAS
The radiation hardness study of ionizing detectors based on SiC and diamond
Electronics and Photonics
Name of the supervisor
Mgr. Bohumír Zaťko, PhD
Faculty of Electrical Engineering and Information Technology, Slovak University of Technology in Bratislava
The aim of the thesis is the technology preparation of ionizing detectors, study of electrical and detection properties and the influence of radiation dose on its performance. Used detection materials are high-quality epi-layer of 4H-SiC, polycrystalline and single crystalline diamond layer. At first the work will be concentrated on design and preparation of detection structures. Following the electrical characterization (current-voltage, capacity-voltage measurements at various temperatures) will be realized. SiC and diamond are wide band gap materials able to work also at increased temperatures. Selected suitable detection structure will be connected to low noise spectrometric set-up and evaluated. Following structures will be irradiated by high doses of radiation (electrons, protons, neutrons) and investigated its properties changes. Finally, the radiation hardness will be evaluated and compared with standardly used silicon detectors.