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PhD. Topics

Institute of Electrical Engineering SAS

Study of thermo - electro - mechanical properties of diamond/GaN heterostructures for high power applications
PhD. program
Physical Engineering
Name of the supervisor
Ing. Tibor Izsák, PhD.
Receiving school
Faculty of Electrical Engineering and Information Technology, Slovak University of Technology in Bratislava
Gallium nitride (GaN) electronic devices are in high demand for high-power, high-frequency applications due to their outstanding electronic properties. On the other hand, improved thermal management is necessary for these devices to operate at required power densities with an acceptable lifetime. One solution is to combine the device with a high thermal conductivity material (such as diamond) in the function of heat spreading that can rapidly transfer the localised heat to an external cooling system.
The PhD work will be focused mainly on the study of the influence of various interlayers (i.e. ~50÷200 nm thin films of SiO2, SixNy, AlN, Al2O3, etc.) on the polycrystalline diamond/GaN heterostructures properties from the point of view of thermal boundary resistance, thermal conductivity, interface charge, mechanical stress. The electrical properties of the realized electronic devices will be investigated by well-known methods (I-V, C-V, radiofrequency). It is supposed that the experimental results will be supported by modelling and simulations. The PhD student will be part of a young research team with international cooperation and with access to high-tech research facilities. The obtained results are highly desired for advanced projects proposals and cooperation with companies.